CMPT3090L Search Results

CMPT3090L Datasheets (1)

Filter by Manufacturer

Central Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CMPT3090L		Central Semiconductor	SURFACE MOUNT LOW VCE(SAT) NPN POWER TRANSISTOR	Original	PDF	108.08KB	2

CMPT3090L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CMPT3090L Abstract: NPN transistor Ic 50A Contextual Info: Central CMPT3090L TM Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low VCE(SAT) NPN Transistor in a space saving Power SOT-23F surface mount package, designed for DC-DC converters for mobile	Original	cmpt3090l ot-23f 100ma 200ma +3500ma 13-december npn transistor ic 50a	PDF
MV TRANSISTOR SOT23 Contextual Info: RY A IN IM L RE P Central CMPT3090L TM Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low VCE(SAT) NPN Transistor in a space saving Power SOT-23 surface mount package, designed for DC-DC converters for mobile	Original	cmpt3090l ot-23 100ma 200ma +3500ma 17-december mv transistor sot23	PDF
marking CODE JTS Contextual Info: Central" CMPT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low V c E (S A T ) NPN Transistorin a space saving Power SOT-23 surface mount package, designed for DC-DC converters for mobile sys	OCR Scan	cmpt3090l ot-23 200ma 500ma +217-december marking code jts	PDF
MV TRANSISTOR SOT23 Contextual Info: Y Device Under Development-Please Consult Factory R A N MI I L RE P Central CMPT3090L TM Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low VCE(SAT) NPN Transistor in a space saving Power SOT-23 surface mount package,	Original	cmpt3090l ot-23 100ma 200ma +3500ma 17-december mv transistor sot23	PDF
CMPT3090L Abstract: MV TRANSISTOR SOT23 Contextual Info: CMPT3090L SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low VCE(SAT) NPN Silicon Transistor in a space saving Power SOT-23 surface mount package, designed for DC-DC converters for mobile systems	Original	cmpt3090l ot-23 100ma 500ma +2200ma mv transistor sot23	PDF
BAT 13003 D Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40 Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836	OCR Scan	30wq03f 30wq04f 30wq05f 30wq06f +1650wf10f 50wf20f 50wf30f 50wf40f bal99 bar42 bat 13003 d smbj5.oca bat 13003 em 434 cmhd3595 cmr1u-02m cmsd4448 cmps5064 cmpsh-3se cmsh3-40	PDF
CP309 Abstract: CMPT3090L CMXT3090L CXT3090L CZT3090L Contextual Info: Central TM Semiconductor Corp. PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS	Original	cp309 cmpt3090l cxt3090l czt3090l +1cmxt3090l	PDF
part MARKING k48 Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2 Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E	OCR Scan	cmod2004 cmld2004 cmld2004a cmld2004c +16cmld2004s cmld2004do bc846a cmsz5250b cmst3904 bc846b part marking k48 marking bc p28 cmsd4448 w4w marking cm0z15l cmz5936b cm0z11v cmz5945b marking 6ca marking code ca2	PDF
CMPT3090L Abstract: CMXT3090L CP309 CXT3090L CZT3090L Contextual Info: PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.4 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization	Original	cp309 cmpt3090l cxt3090l czt3090l +2cmxt3090l 22-march	PDF
CMPT3090L Abstract: CMXT3090L CP309 CXT3090L CZT3090L Contextual Info: PROCESS CP309 Central Power Transistor TM Semiconductor Corp. NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS	Original	cp309 cmpt3090l cxt3090l czt3090l +1cmxt3090l	PDF
BF244 datasheet Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910 Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216	Original	1n456 cpd64 1n456a 1n457 +121n457a 1n458 bf244 datasheet 2n5133 equivalent mps5771 bd345 bd347 bf244 2n5248 bf256 2n3304 2n5910	PDF