dcdc sot-89
Abstract: 30A sot-89 CXT3090L transistor marking NA 85 SOT89 MARKING CODE 30A sot89
Contextual Info: CXT3090L SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low VCE(SAT) NPN Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN cards, motor
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cxt3090lot-89500ma200ma+623-februarydcdc sot-8930a sot-89transistor marking na 85sot89 marking code30a sot89
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CXT3090L
Abstract: sot89 "NPN TRANSISTOR" SOT89 MARKING CODE
Contextual Info: Central CXT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low VCE(SAT) NPN Transistor in a Power TM SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN
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cxt3090lot-89500ma200ma+314-novembersot89 "npn transistorsot89 marking code
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SOT-89
Abstract: sot-89 marking code CXT3090L SOT89 MARKING CODE
Contextual Info: Central CXT3090L Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN SILICON POWER TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low VCE(SAT) NPN Transistor in a Power TM SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN
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cxt3090lot-89500ma200ma+420-maysot-89sot-89 marking codesot89 marking code
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CXT3090L
Contextual Info: CXT3090L SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR POWER TM 89 SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Power Dissipation Operating and Storage Junction Temperature
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cxt3090lot-89100ma500ma+2200ma23-september
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diode sot-89 marking code
Abstract: marking ic 2008 sot-89 marking code CXT3090L
Contextual Info: CXT3090L Central TM Semiconductor Corp. SURFACE MOUNT LOW VCE SAT NPN POWER TRANSISTOR POWER TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low VCE(SAT) NPN Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN
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cxt3090lot-89100ma200ma+5500ma20-augustdiode sot-89 marking codemarking ic 2008sot-89 marking code
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say marking
Abstract: say marking code MARKING CODE say
Contextual Info: Centrar CXT3090L Sem iconductor Corp. SURFACE MOUNT l o w v CE SAT NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low V 0 E(SAy) NPN Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN
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cxt3090lot-89500ma14-november+3say markingsay marking codemarking code say
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MARKING CODE BV sot-89
Abstract: sot-89 marking eq sot-89 marking LB sot marking code LB
Contextual Info: Central" CXT3090L Semiconductor Corp. SURFACE MOUNT l o w v ce SAT NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3090L is a Low V q e (s a T) n p n Transistor in a Power SOT-89 surface mount package, designed for DC-DC converters for mobile systems and LAN
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cxt3090lot-89cp30914-november+4marking code bv sot-89sot-89 marking eqsot-89 marking lbsot marking code lb
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CMPZ4124
Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches
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ot-23350mwcmpt8099cmpt2222a+15ot-223ot-89cq89dcq89dscmps5061cmpz4124cmz5930bcmz5945bcmz5947btransistor 1602cbc327/transistor bc547 bk 045cmpz4618cmpz4614cmz5948bcmz5936b
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BAT 13003 D
Abstract: SMBJ5.OCA bat 13003 em 434 CMHD3595 CMR1U-02M CMSD4448 CMPS5064 CMPSH-3SE CMSH3-40
Contextual Info: index/Cross Reference Industry Part Number Central Part Number CMXD4448 1MN10 10BQ015 CMSH1-20ML CMR1U-02M 10MF2 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M CMR1-10M 1N6484 1S2835 CMPD2836
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30wq03f30wq04f30wq05f30wq06f+1650wf10f50wf20f50wf30f50wf40fbal99bar42bat 13003 dsmbj5.ocabat 13003em 434cmhd3595cmr1u-02mcmsd4448cmps5064cmpsh-3secmsh3-40
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TRANSISTOR NPN BA RV SOT - 89
Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
Contextual Info: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes
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cq89ncq89dscq89mscq89ns+16ot-89cmpss061cmps5062cmps5063cmps5064czs5064transistor npn ba rv sot - 89bc816transistor zt 2222abo338cmpsh-3se2222a transistorsnpn 800v 900 watt 3atr 3906 pnp smbg sot26cmpz4124
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CP309
Abstract: CMPT3090L CMXT3090L CXT3090L CZT3090L
Contextual Info: Central TM Semiconductor Corp. PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS
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cp309cmpt3090lcxt3090lczt3090l+1cmxt3090l
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44H11
Abstract: A 3150 ic 45h11 3055 sot-223 sod923 2955 sot223 IC A 3150 SOT 363 darlington CXT7090L 7120
Contextual Info: Bipolar Power Transistors Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless
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od-923ot-923ot-953od-523+16ot-523ot-563od-323ot-323ot-363od-12344h11a 3150 ic45h113055 sot-223sod9232955 sot223ic a 3150sot 363 darlingtoncxt7090l7120
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CMPT3090L
Abstract: CMXT3090L CP309 CXT3090L CZT3090L
Contextual Info: PROCESS CP309 Power Transistor NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.4 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS Top Side Metalization
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CMPT3090L
Abstract: CMXT3090L CP309 CXT3090L CZT3090L
Contextual Info: PROCESS CP309 Central Power Transistor TM Semiconductor Corp. NPN - Low Saturation Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 41.3 x 41.3 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 9.5 x 9.2 MILS Emitter Bonding Pad Area 12.8 x 10.2 MILS
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transistor 3904
Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
Contextual Info: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.
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ot-23cmpt491ecmpt591eot-223+14cmpta46cmpta96czta46czta96transistor 3904transistor 2222atransistor 2222a sot 89sot 23 transistor 70.22907a transistor pnppnp transistor 800v2907a pnp bipolar transistorstransistor 5 amp 700 volttransistor a92 sot 893906 npn
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CMR1U-02M
Abstract: CMSD4448 CMSH3-40 CMPZ4124 CMSH3-100 CXTA27 TR em 328 SO3903 BST60 CMPZ4614
Contextual Info: index/Cross Reference Industry Part Number Central Part Number 1MN10 CMXD4448 10BQ015 CMSH1-20ML 10MF2 CMR1U-02M 10MQ040 CMSH1-40M 10MQ060 CMSH1-60M 1N6478 CMR1-02M 1N6479 CMR1-02M 1N6481 CMR1-04M 1N6482 CMR1-06M 1N6483 CMR1-10M 1N6484 CMR1-10M 1S2835 CMPD2836
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1mn10cmxd444810bq015cmsh1-20ml+1510mf2cmr1u-02m10mq040cmsh1-40m10mq060cmsh1-60mcmsd4448cmsh3-40cmpz4124cmsh3-100cxta27 trem 328so3903bst60cmpz4614
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