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    BU807 Search Results

    BU807 Datasheets (28)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BU807
    Central Semiconductor Power Transistors TO-220 Case Original PDF 33.66KB 1
    BU807
    Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Original PDF 65.76KB 3
    BU807
    Fairchild Semiconductor NPN Epitaxial Silicon Darlington Transistor Original PDF 41.37KB 4
    BU807
    STMicroelectronics TRANS DARLINGTON NPN 150V 8A 3TO-220 Original PDF 57.32KB 4
    BU807
    STMicroelectronics MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTORS Original PDF 49.46KB 4
    BU807
    Various Russian Datasheets Transistor Original PDF 84.39KB 8
    BU807
    Boca Semiconductor FAST SWITCHING DARLINGTON TRANSISTOR Scan PDF 117.31KB 3
    BU807
    Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF 379.56KB 4
    BU807
    Central Semiconductor Power Darlington Transistors (Epoxy) Scan PDF 379.52KB 4
    BU807
    Central Semiconductor Power Transistors Scan PDF 62.03KB 1
    BU807
    Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF 40.14KB 1
    BU807
    Fairchild Semiconductor NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Scan PDF 63.87KB 2
    BU807
    Mospec POWER TRANSISTORS(8.0A,150-200V,60W) Scan PDF 112.93KB 3
    BU807
    Mospec Fast Switching Darlington Transistor Scan PDF 112.92KB 3
    BU807
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 197.1KB 5
    BU807
    Motorola European Master Selection Guide 1986 Scan PDF 48.65KB 1
    BU807
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 53.93KB 1
    BU807
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 156.66KB 1
    BU807
    Unknown Cross Reference Datasheet Scan PDF 35.17KB 1
    BU807
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 109.42KB 1
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    BU807 Price and Stock

    Taiwan Semiconductor

    Taiwan Semiconductor GBU807H

    Diode Rectifier Bridge Quad 1000V 8A 4-Pin GBU Tube - Rail/Tube (Alt: GBU807H)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GBU807H Tube 12 Weeks 1,000
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    • 10000 $0.62
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    EBV Elektronik GBU807H 15 Weeks 1,000
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    Taiwan Semiconductor GBU807-K D2

    Diode Rectifier Standard Bridge Single 1000V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU807-K D2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GBU807-K D2 Tube 2,000
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    Taiwan Semiconductor GBU807-K

    Diode Rectifier Bridge Single 1000V 8A 4-Pin GBU Tube - Rail/Tube (Alt: GBU807-K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GBU807-K Tube 14 Weeks 1,000
    • 1 -
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    • 1000 $0.51
    • 10000 $0.50
    Buy Now

    Taiwan Semiconductor GBU807-K D2G

    Diode Rectifier Standard Bridge Single 1000V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU807-K D2G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GBU807-K D2G Tube 2,000
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    Taiwan Semiconductor GBU807HC2G

    Bridge Rectifier Glass Passivated Single 1000V 8A 4-Pin Case GBU Tube - Rail/Tube (Alt: GBU807HC2G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GBU807HC2G Tube 1,000
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    BU807 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BU806

    Abstract: BU807 bu806 equivalent using of damper in Horizontal Output Transistor BU806 s&T
    Contextual Info: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


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    bu806bu807o-220bu806 equivalent+2using of damper in horizontal output transistorbu806 s&t PDF

    BU806

    Abstract: BU807
    Contextual Info: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


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    bu806bu807o-220 PDF

    damper diode darlington npn

    Abstract: bu806 BU807 ea8 diode ra 220 diode
    Contextual Info: BU806/BU806FI BU807 SGS-THOMSON l^OigiOllLiÛïïiOiOOi MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . . . . SGS-THOMSON PREFERRED SALESTYPES NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EM ITTER DIODE APPLICATION


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    bu806/bu806fibu807bu806bu806fi+6o-220isowatt220t0-220damper diode darlington npnea8 diodera 220 diode PDF

    using of damper in Horizontal Output Transistor

    Abstract: BU806 bu806f1 Transformer eht horizontal deflection tda1180 TDA1180 equivalent bu806 eht transformer
    Contextual Info: i T T SGS-THOMSON 7# « Ic m iC T M * ! BU806/F1 BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS ESCR1PTION he BU806/807 and BU806F1/807FI are silicon pitaxial planar NPN power transistors in Darigton configuration with integrated base-emitter leed-up diode, mounted respectively in T0-220


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    bu806bu807/fibu806/807bu806f1/807fi+10t0-220isowatt220bu806/fiusing of damper in horizontal output transistorbu806f1transformer ehthorizontal deflection tda1180tda1180equivalent bu806eht transformer PDF

    u806

    Abstract: u806 diode BU806FI JIS B 0409 BU806
    Contextual Info: SGS-THOMSON !LiM iO gS BU806/FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR


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    bu806/fibu807bu806bu806fi+5t0-220isowatt22cu806u806 diodejis b 0409 PDF

    BU806

    Abstract: BU807 CO530
    Contextual Info: ÜàMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA


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    bu807bu806co530 PDF

    BU806FI

    Abstract: BU807 BU806FI EQUIVALENT DATASHEET BU806 BU806F transistor bu806
    Contextual Info: BU806/BU806FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ HORIZONTAL DEFLECTION FOR


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    bu806/bu806fibu807bu806bu806fi+5o-220isowatt220bu806fi equivalent datasheetbu806ftransistor bu806 PDF

    BU806

    Abstract: BU807
    Contextual Info: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r s ( P t c e t u e d


    Original
    bu806bu807o-220 PDF

    BDX53D

    Abstract: D45VH4 BD807 D44H5 bdw41 BUS36 BD900 BD805 BDX33D D44H8
    Contextual Info: Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type NPN 2N6044 TIP101 BDX53B TIP131 BD899 BD899A BDX53C TIP132 BD901 2N6045 TIP102 MJE15028 BDX53D MJE15030 BU807 BU806 MJE13006 Uceo PNP 2N6041 TIP106 BDX54B TIP136 B0900 BD900A


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    2n60442n6041tip101tip106+161k/20kbdx53bbdx54btip131tip1361k/15kbdx53dd45vh4bd807d44h5bdw41bus36bd900bd805bdx33dd44h8 PDF

    OC314

    Contextual Info: rz z Ä7 I SGS-TUOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS D E S C R IP T IO N The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in TO-220


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    bu806/fibu807/fibu806/807bu806fi/807fi+4o-220isowatt220isowatt22qoc314 PDF

    bu806 equivalent

    Abstract: horizontal deflection tda1180 BU806 BU806FI bu807 equivalent
    Contextual Info: r z 7 SCS-THOM SON A 7 f G«ra iLiOT i[] es BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter


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    bu806/fibu807/fibu806/807bu806fi/807fi+8o-220isowatt220500msbu806 equivalenthorizontal deflection tda1180bu806bu806fibu807 equivalent PDF

    bu806 equivalent

    Abstract: BU806FI EQUIVALENT BU806 TDA1180 eht transformer using of damper in Horizontal Output Transistor CW-70 horizontal deflection tda1180 crt flyback transformer tv u806
    Contextual Info: rrz SGS-THOMSON BU806/FI BU807/FI FAST SWITCHING DARLINGTON TRANSISTORS DESCRIPTION The BU806/807 and BU806FI/807FI are silicon epitaxial planar NPN power transistors in Dar­ lington configuration with integrated base-emitter speed-up diode, mounted respectively in T0-220


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    bu806bu807/fibu806/807bu806fi/807fi+12t0-220isowatt220bu806/fibu806 equivalentbu806fi equivalenttda1180eht transformerusing of damper in horizontal output transistorcw-70horizontal deflection tda1180crt flyback transformer tvu806 PDF

    BU806

    Abstract: BU806FI BU807 Darlington transistor T7 27 BU806 SGS transistor j 127
    Contextual Info: SGS-THOMSON IM [im[i Sra iD(gS BU806/BU806FI BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPES . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR


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    bu806/bu806fibu807bu806bu806fi+5t0-220isowatt220darlington transistor t7 27bu806 sgstransistor j 127 PDF

    Contextual Info: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . NPN DARLINGTONS . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . HORIZONTAL DEFLECTION FOR MONOCHROME TVs


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    bu806bu807o-220 PDF

    BU806

    Abstract: BU807 400V100
    Contextual Info: BU806 BU807 MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR


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    bu806bu807o-220400v100 PDF

    BU806

    Abstract: CO530 BU807 "Darlington Transistor" npn darlington transistor 200 watts
    Contextual Info: FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA


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    bu807bu806co530darlington transistor+1npn darlington transistor 200 watts PDF

    BU807

    Abstract: BU806
    Contextual Info: BU806 BU807  MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ HORIZONTAL DEFLECTION FOR


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    bu806bu807o-220 PDF

    NPN Transistor 50A 400V

    Abstract: 400v 50A Transistor BU807 400V 100MA NPN
    Contextual Info: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER


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    bu806bu807o-220npn transistor 50a 400v+2400v 50a transistor400v 100ma npn PDF

    NPN Transistor 50A 400V

    Abstract: 400v 50A Transistor bu807 BU806 400V 100MA NPN
    Contextual Info: BU806 BU807 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are NPN Silicon Darlington Transistors designed for high voltage, high current, fast switching applications. MARKING: FULL PART NUMBER


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    bu806bu807o-220npn transistor 50a 400v+2400v 50a transistor400v 100ma npn PDF

    T1P122

    Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
    Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400


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    2sc3039mje13005t1p49mje30sst+13tip31at1p41atip120cil4006bd211bd243t1p122t1p41ct1p41t1p312sd880y2sd88d2n529b PDF

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


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    o-126ksc2682ksc3502ksc2258+16ksc2258aksc3503ksc3953ksc2688bd150ksc5305dfjaf6812tip41 darlingtonfjaf6920but12(a)fksa1010transistor bd140-15bu408 equivalentfjl6920 equivalentfjl6820fjl6920 PDF

    Contextual Info: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50


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    bdw23bdw24bdw23abdw24a+6bdw23bbdw24bbdw23cbdw24cbdx53ebdx54e PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    mj15052

    Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
    Contextual Info: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of


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    an930an930/dhull111111mj15052+9mj-15052cfl ups 45 w circuit schematic diagrammj15052 motorolaschematic diagram ups icamj15003 internal diagrampower supply tester schematic diagrampulse generator mc14001at330transistor mj11032 PDF