BPW77N Search Results

BPW77NB

Contextual Info: BPW77N Vishay Telefunken Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensible to ambient straylight.

BPW77NB

Abstract: BPW77N BPW77NA
Contextual Info: TELEFUNKEN Semiconductors BPW 77 N Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10°

VBPW77NB

Abstract: BPW77NA BPW77NB npn phototransistor APPLICATION NOTE BpW77 BPW77 phototransistor 600 nm Silicon NPN Phototransistor
Contextual Info: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW77NA

Abstract: BPW77NB BPW77N
Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ± 10° makes it insensible to ambient straylight.

77NB

Contextual Info: T emic BPW77N S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P W 7 7 N is a v e ry h ig h se n s itiv e s ilic o n N P N e p ita x ia l p la n a r p h o to tra n s is to r in a sta n d a rd T O - 18 h e rm e tic ally se a le d m e ta l c ase.

vbpw77nb

Abstract: APPLICATION NOTE BpW77 BPW77NB BPW77NA BPW77
Contextual Info: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

BPW77NA

Abstract: BPW77NB BPW77N
Contextual Info: BPW77N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 °

npn phototransistor

Abstract: BPW77NA BPW77 BPW77NB BPW77N
Contextual Info: BPW77N Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensible to ambient straylight.

BPW77NB

Contextual Info: BPW77N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 °

81527

Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 ° makes it insensible to ambient straylight.

BPW77NA

Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 ° makes it insensible to ambient straylight.

BPW77NA

Abstract: BPW77NB BPW77N 8342
Contextual Info: BPW77N Vishay Telefunken Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes it insensible to ambient straylight.

BPW77NA

Contextual Info: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

VBPW77NB

Abstract: APPLICATION NOTE BpW77 BPW77NB Infrared phototransistor TO18
Contextual Info: BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ± 10° makes it insensible to ambient straylight.

BP103

Abstract: BPW77NB BPX43-4 BPX43-3 BP103-3 BPX43 bpx434 ea3a
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 Q0T0TpaH3MCT0pbi b Kopnyce □ 5 MM Kofl: fl^MHa BOnHbl B TOHKe MaKC. HyBCTBMT. A.max BPX43-3 BPX43-4 BPW77NB BP103-3 880 880 850 850 hm hm hm hm Yror o63opa ±15° ±15° ±10° 55° u CEC

BPW77N

Abstract: BPW77NA BPW77NB MA694 8349
Contextual Info: BPW77N Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10° makes

A 69157 scr

Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
Contextual Info: NON-VISIBLE OPTOELECTRONICS Find Datasheets Online DETECTORS • ENCODERS DETECTORS SCHMITT TRIGGER DETECTORS CONT. PLASTIC PACKAGING Price Each Max. Radiant Operating Output Threshold Range Vcc Mfg. Part No. Fig. Circuit (mW/cm2) (V) Stock No. 2 Buffer

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

tept5600 response time

Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
Contextual Info: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily

Leader 8020 schematics Oscilloscope

Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

751-1201-ND

Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND
Contextual Info: NEW! Fig. Package Peak Wavelength nm Bandwidth (nm) Collector Light Current Ica (mA) Typ. View Angle (°) On/Off Time (µs) Digi-Key Part No. 850 930 850 925 825 825 920 920 850 850 850 850 950 950 950 830 620 ~ 980 900 ~ 980 620 ~ 980 875 ~ 1000 620 ~ 960

JIS B 0406

Abstract: bpx43-6 rt 9045 photo transistor BPX38 BPW77NA BPW76B BPW77
Contextual Info: Tem ic S e m i c o n d u c t o r s Photo Transistors continued Characteristics ; Pboto Area/mm2 Tÿpe Package 4/-q> le a / rnA Ee /B iW /c m 2 • (VCE = 5 V, X =950nm ) tr/jiS Rt/kfi @ Q c»5m A , k — 950 nm) Photo Transistors in Hermetically Sealed Package

sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,