BGY95A
Contextual Info: BGY95A/B J\ _ FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC09 OR DATA SHEET UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily fo r mobile transmitting equipment operating from a nominal 7.5 V power supply.
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BGY46B
Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module
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bgy46abgy46bbgy47abgy95a/b+15bgy96a/bbgy110d/e/f/gbr211bs107bs108bs170transistor regulatorfm 513 diodepiezoelectric mobile chargeranalog voice scramblerdtmf interface with microcontrollerdtmf mobilefm operational amplifiersa612all microphone
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Contextual Info: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,
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bbs3t31qd3d247bgy95a/bbgy95+4bgy95abgy95bbb53r31d03d255
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BGY95A
Abstract: MCA8 BGY95B ca712 p SOT200 BGY95 bs33
Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bbS3^31 QQ3G247 bl2 I IAPX BGY95A/B J UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,
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dq30247bgy95a/bbgy95bgy95a+5bgy95bmca8ca712 psot200bs33
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BGY95B
Abstract: IG17 BGY95A
Contextual Info: BGY95A/B J V UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF am plifier module designed prim arily fo r mobile transm itting equipment operating from a nominal 7.5 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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BGY116a
Abstract: fo-57C BGY114E
Contextual Info: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and
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bgy110gbgy95abgy95bbgy96b+7bgy114abgy114bbgy114cbgy114dbgy114ebgy116afo-57c
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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RF Power Modules
Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32
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bgy32bgy33bgy35bgy36+14bgy43bgy46abgy46bbgy47abgy95abgy95brf power modulesbgy47philips semiconductors rf power modulesbgy145bbgy110esot-246bgy110fgp 132
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transistor D 982
Abstract: TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052
Contextual Info: Philips S em iconductors Semiconductors for Telecom systems Functional index page SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC 339 TEA1060/1061 versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic
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pca1070tea1060/1061tea1060tea1061+15bgy46abgy46bbgy47abgy95a/bbgy96a/bbgy110d/e/f/gtransistor d 982tda7050all microphonetda7052 icpocsag receiverpiezoelectric mobile chargertrue logarithmic amplifiertda7052 audio power amplifier ictda7052
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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Philips Semiconductors RF Power Modules
Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Contextual Info: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5
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ot132bot288cot183aphilips semiconductors rf power modules+3rf power modulesphilips semiconductors selection guidebgy110e
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