BFG540 Search Results

B 0920

Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

dk 2482 h transistor

Abstract: NPN N43 dk 2482 transistor BFG540 N43 n37 transistor Code N43 transistor N43 557 sot143 BFG540 BF 199 transistor
Contextual Info: e • ^ _ Philips S em iconductors ^ N • bbS3131 AMER 0025011 PHILIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES 253 £ Product specification b7E BFG540; BFG540/X; BFG540/XR PINNING • High power gain • Low noise figure • High transition frequency

NPN N43

Abstract: NPN N37 BFG540 transistor N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

BFC505

Abstract: BFG425W rf down converter 30 mhz RF power amplifier MHz
Contextual Info: Philips Semiconductors RF Wideband Transistors Application reports APPLICATION REPORTS Copies of the following application reports are available on the enclosed CD-ROM 1. Power Amplifier for 1.9 GHz at 3 V BFG10/X, BFG11/X and BFG540/X , "RNR4S/458/1992, 29 September 1993"

Contextual Info: BFG540 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

BFG540

Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

TRANSISTOR SMD MARKING CODE 16

Abstract: TRANSISTOR SMD catalog Marking Code SMD transistors MARKING SMD npn TRANSISTOR R SMD transistor code 132 "Philips Semiconductors" Catalog SMD MARKING CODE transistor smd marking CT1 transistor smd tv T R TRANSISTOR SMD MARKING CODE
Contextual Info: Philips Semiconductors: Product information on BFG540; BFG540, X; BFG540, XR, NPN 9GHz wideband transistor Select & Go. Go to Catalog & Start Information as of 2000-11-05 Catalog by Function Discrete semiconductors Audio Clocks and Watches Data communications

RF power amplifier MHz

Abstract: BFC505 GSM down converter power amplifier BFG425W BLT82 amplifier 1 2 ghz BFG410
Contextual Info: Philips Semiconductors Product specification RF Wideband Transistors Application reports APPLICATION REPORTS Copies of the following application reports are available on the enclosed CD-ROM 1. Power Amplifier for 1.9 GHz at 3 V BFG10/X, BFG11/X and BFG540/X , “RNR45/458/1992, 29 September 1993”

Contextual Info: Philips Semiconductors ^ ^ 53^ 3 1 0 0 3 5 5 1 7 7 bT U NPN 9 GHz wideband transistor crystal APV Product specification X3A-BFR540 AMER PHILIPS/DISCRETE b^E D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

IEC-134

Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Contextual Info: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

High IP3 Low-Noise Amplifier

Abstract: 0805CS BP317 micro amplifier 471 philips application notes bfg500 MGS730
Contextual Info: APPLICATION INFORMATION 400 MHz low noise amplifier with the BFG540W/X Philips Semiconductors Application information 400 MHz low noise amplifier with the BFG540W/X ABSTRACT • Description of the product The BFG540W/X is one of the Philips silicon planar epitaxial wideband transistors of the BFG500 series.

Contextual Info: BFG540W/X Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8.0

Contextual Info: BFG540/XR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

BFG541

Abstract: X3A-BFR540 BFR540 BFG540
Contextual Info: 0035517 P h iM p s jg m ic o n d u c to rg _ _ ^ ^ NPN 9 GHz wideband transistor crystal WM A P Y 7bT Product specification X3A-BFR540 N AUER PHILIPS/DISCRETE b'îE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

SOT-173

Abstract: sot173 BFP96 BFQ32C
Contextual Info: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A

Contextual Info: BFG540W Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8.0

BFG540 N43

Abstract: NPN N43 transistor n49 BFG540 n37 transistor MRA751 Code N43
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 03 2000 May 23 Philips Semiconductors Product specification BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor

SOT343N

Abstract: BFG540W DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor

BFG540

Abstract: transistor N43
Contextual Info: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency

Contextual Info: BFG540/X Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15â V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8

Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 NXP Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor FEATURES

transistor Bf 981

Abstract: transistor Gigahertz feature of ic UM 66 philips MATV amplifiers RF Amplifier xr BFG540W DIN45004B MLC047 MEA973
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of August 1995 File under Discrete Semiconductors, SC14 1997 Dec 04 Philips Semiconductors Product specification BFG540W BFG540W/X; BFG540W/XR

Contextual Info: BFG540W/XR Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)120m Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)8.0