| BF908WR |
|
NXP Semiconductors
|
BF908WR - N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
|
Original |
PDF
|
| BF908WR |
|
Philips Semiconductors
|
N-Channel Dual-Gate MOS-FET |
|
Original |
PDF
|
| BF908WR |
|
Philips Semiconductors
|
N-channel dual-gate MOS-FET |
|
Scan |
PDF
|
| BF908WR,115 |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
|
Original |
PDF
|
| BF908WR,115 |
|
NXP Semiconductors
|
BF908 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, CMPAK-4, FET RF Small Signal |
|
Original |
PDF
|
| BF908WRT/R |
|
NXP Semiconductors
|
N-channel dual-gate MOS-FET - CIS TYP: 3.1 pF; COS: 1.7 pF; ID: 40 mA; IDSS: 3 to 27 mA; IDSS min.: 1.7 mA; Noise figure: 1.5@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 36 mS |
|
Original |
PDF
|
| BF908WRTR |
|
Philips Semiconductors
|
N-channel dual-gate MOS-FET |
|
Original |
PDF
|
| BF908WRT/R |
|
Unknown
|
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
|
Scan |
PDF
|
