BDT95 Search Results

BDT95F

Abstract: BDT91F BDT92F BDT93F BDT96F
Contextual Info: BDT91F; BDT93F BDT95F pHILIPS INT ERNATIONAL SbE D • 711GÔSb G04333D b74 ■ P H I N 7^ - 3 3 - ^ ? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a S O T186 envelope w ith an electrically insulated mounting base. PNP complements are B D T 92F , BD T94Fand B D T 96F .

BDT94

Abstract: BDT96 BDT93 SOT92 BDT91 BDT92 BDT95 IEC134
Contextual Info: BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95. Q UICK REFERENCE D A T A

Contextual Info: BDT91F; BDT93F BDT95F PHILIPS INTERNATIONAL SbE D • 7 1 1 D Ô 2 b G G M 3 3 3 D b74 « P H I N SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F.

BDT93

Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
Contextual Info: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.

BDT91F

Abstract: BDT92F BDT94F BDT95F BDT96F BDT96
Contextual Info: BDT92F; BDT94F BDT96F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F. QUICK REFERENCE DATA BDT92F 94F 96F -VC BO

bdt95a

Abstract: BDT96 BDT93 BDT91 BDT92 BDT94 BDT95
Contextual Info: \ M A G IN IA TEC BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general am plifier and switching applications. P-N-P com plem ents are BDT92, BDT94 and BDT96.

BDT93

Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96

BDT95

Contextual Info: _ y v _ BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96.

Contextual Info: BDT92F; BDT94F BDT96F _ y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOTl86 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.

Contextual Info: _ y v _ BDT92 BDT94 BDT96 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic envelope intended fo r use in audio output stages and general amplifier and switching applications. N-P-N complements are BDT91, BDT93 and BDT95.

BDT95

Abstract: BOT93 BDT93 BDT96 BOT95 BDT91 BDT92 BDT94
Contextual Info: BDT91 BDT93 BDT95 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. P-N-P complements are BDT92, BDT94 and BDT96. QUICK REFERENCE DATA

T-33-O

Abstract: BDT94F BDT91F BDT92F BDT95F BDT96F 043341
Contextual Info: BDT92F; BDT94F BDT96F I SbE T> PHILIPS INTERNATIONAL m 7110ÖEb 004334G 513 BIPHIN SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each inaSOT186 envelope with an electrically insulated mounting base. NPN complements are BDT91F, BDT93Fand BDT95F.

BDT95

Abstract: bdt93
Contextual Info: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL SbE D I J _ v _ 711002t, 0043322 5 Tfl » P H I N T - 3 ? ' I 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio output stages and general am plifier and switching applications.

Contextual Info: BDT91F; BDT93F BDT95F JV SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT92F, BDT94Fand BDT96F. QUICK REFERENCE DATA BDT91F 93F 95F

2u 62 diode

Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20

2009-6F

Contextual Info: BDT92F; BDT94F BDT96F PHILIPS INTERNATIONAL SbE ]> • 711DÖEfc> Q 0 4 3 3 M D S13 ■ P H I N T -3 3 -O t SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in aSOT186 envelope with an electrically insulated mounting base.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

044H11

Abstract: KT808B 044H10 kt808BM BJG 36 kt808 2s021 B0313 2n1810
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOT7S09 SOT7S09 2N3714 B0245B B0245B B0245B B0313 2S041 ~~~g~ 25 30 ST28143 2SC1115 2SC1115 OTL3203 SOT3207 SOT3207 SOT3207 2N500S ~~~~n 35 40 2N5S24 2N5730 2N4301 2NS128 BOY91 BOS11 GSDB10008 SOT701S

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BDT95

Abstract: BDT96 BDT91 1346P pht 094 BDT93
Contextual Info: 05-DEC-1997 12=45 FROM MAGNATEC TO 01132794449 P.04^08 r v s 2 5 1 0 BDT91 BDT93 •BDT95 rC \ MAGNA T f ï r K , , - o b o SILiCON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended for use in audio output stages and general amplifier and

KT808AM

Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.