BD240 Search Results

BD239

Abstract: BD239A BD239B BD239C BD240
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD240 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

BD239

Abstract: BD239C BD239A 2a 100v NPN BD239B
Contextual Info: Inchange Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD240/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base

BD239

Abstract: BD239A BD239B BD239C
Contextual Info: SavantIC Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors DESCRIPTION With TO-220C package •Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

BD240

Abstract: BD240A BD240B BD240C BD241 power semiconductor 1973
Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW ● 30 W at 25°C Case Temperature

BD240

Abstract: bd* to-220 BD239
Contextual Info: BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

Contextual Info: TO-220 Power Package Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) @Tc=25°c teo ^CBO (V) Min ^CEO ^EBO (V) Min (V) Min 2SB858C 70 60 5 40 4 1 2SB858D 70 60 5 40 4 1 BD240 55 45 5 30 2 200

transistor BD 246

Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

transistor BD 246

Abstract: TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245 BD240 BD240A BD240B
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm

b0239c

Abstract: 7 amps pnp transistor TRANSISTOR T0220 PNP POWER TRANSISTOR TO220 B0243C BD243 B0243 b0244c npn transistor bd243c Transistor 2n6099
Contextual Info: PLASTIC POWER P L A S T IC P O W E R T R A N S IS T O R S E L E C T O R C H A R T lc 4 Am ps VCE° V o lts NPN PNP 5 Am ps NPN 7 Am ps PNP NPN PNP 7 Am ps NPN PNP > 10 A m ps NPN 2 N 6 2 8 8 2N 6 1 1 1 30 2N6103 40 BD239 BD240 B D 2 41 BD242 BD243 BD244 BD243A

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C TO-220 Plastic Package BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS

T1P42C

Abstract: T1P-42C 53a33 2sb85 T1P42A T1P32B T1P32A
Contextual Info: POWER PACKAGE TRANSISTORS PNP M axim um R atin gs E lectrical C h aracte ristics VCE0 v EBO PD 'CBO « v CB (V) (V) (W) (V) Un Mn Mn a Tc=25°C MJE350T 300 300 3 21 100 300 30 240 0.05 10 2SA940 150 150 5 25 10 120 40 140 0.50 10 1.5 BD240C 115 100 5 30

BD239

Abstract: BD239A
Contextual Info: BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD240 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature

BD 239A

Contextual Info: N AUER PHILIPS/DISCRETE . 11 b b S E ^ l D0n3flT b • ESE D BD240; BD240A BD240B; BD 2 4 0 C T - 3 3 - 7 SILIC O N EPITAXIAL B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television*

bd239

Contextual Info: <3s.mi-donau.ctoi L/^ioaucii, One, LS TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD239/A/B/C Medium Power Linear and Switching Applications Jff " - A dlE ^ • Complement to BD240/A/B/C respectively

BD240

Abstract: BD240A BD240B BD240C
Contextual Info: BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications • Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

BD239

Abstract: BD239C BD239A BD239B
Contextual Info: BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively TO-220 1 NPN Epitaxial Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCER

BD240

Abstract: BD240A BD240B BD240C BD241
Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

BD240

Abstract: BD240C BD240A BD240B
Contextual Info: Inchange Semiconductor Product Specification BD240/A/B/C Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD239/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

Contextual Info: 7 ^ 5 3 7 oosaagg b • n " - 3 3 -Q °| SCS-THOMSON •mera «« SJ3 BD239/A/B/C BD240/A/B/C S-THOMSON 3GE I> MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD239, BD239A, BD239B and BD239C are si­ licon epitaxial-base NPN power transistors in Jedec

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

B0415

Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
Contextual Info: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B