BCX70 Search Results

Contextual Info: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCX70K BCX70K General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 45 Units V VCEO VEBO Collector-Emitter Voltage

Contextual Info: BCX70GLT1 General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage VCBO 45 Vdc Emitter −Base Voltage VEBO 5.0 Vdc IC 200 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board 1

Contextual Info: Transistors IC SMD Type Product specification BCX70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BCW60

Abstract: BCX70 BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCW61 BCX71
Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 PNP 2 1 Type Marking Pin Configuration

la 7518

Abstract: TFK 450 BCW60C BCW60D BCW60
Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

BCX70

Abstract: hFE Group BCX70G BCX70H BCX70J BCX70K BCX71 ferranti mark xa SOT-23 BCX70J SOT-23 AJ K BCX70
Contextual Info: k FERRANTI semiconductors BCX70 i N P N Silicon Planar Sm all Signal Transistor DESCRIPTION These devices are intended fo r use in low level am plifica­ tion, lo w level switching and lo w noise applications. Com plementary to th e BCX71 series. Encapsulated in the popular SOT-23 package these devices

BCX70J

Abstract: BCX70K BCX71 BCX71J T116
Contextual Info: BCX70J, K Transistors NPN small signal transistor BCX70J, K zFeatures 1 Ideal for switching and AF amplifier applications. 2) Complements the BCX71. zDimensions Unit : mm) 2.9 0.4 zPackaging specifications 0.95 0.45 0.2Min. BCX70J,K 1.3 2.4 (3) Package Type

sot-23 marking code .S79

Abstract: BCX70G BCX70H marking ag s79 marking code transistor marking s79
Contextual Info: MCC BCX70G THRU BCX70K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.

bcy591x

Abstract: 2N6429A sot23 12p BCY590 2SC538A TBC337A BC521 LOW-POWER SILICON NPN TMPT6429 BCY59C
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC382 KSC1072 2SC538A 2SC538A 2SC538A BCX59-9 BCX70J BCY591X TBC337A BCW66RG gg~~iB~ 15 20 BCY59B BCY59B BC171 JE9014 JC501R M02975 2N2916A BFY76 ~~~~~~B BCY59-B BCY59C BCY59C BCY55 BCX59-10 BCY59X BC237C BC237C18

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 BCX70J,K Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES z Low current z Low voltage 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BCX70J：AJ, BCX70K:AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

6302

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC NPN GENERAL PURPOSE NPN RATINGS DEVICE BCW60D BCW71 BCW72 BCW81 BCX19 BCX20 BCX56 BCX70G BCX70H BCX70J BCX70K NEBTA06 NEBT2222 NEBT2222A NEBT3903 NEBT3904 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ 32

BCX70G

Abstract: BCX70H BCX70J BCX70K
Contextual Info: BCX70G BCX70H BCX70J BCX70K CDIL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = 9ASE 2 = EMITTER

Contextual Info: General Purpose Transistors NPN Silicon BCX70GLT1 BCX70JLT1 BCX70KLT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 2 Symbol Value Unit Collector–Emitter Voltage V CEO 45 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage V CBO 45 Vdc SOT–23 TO–236AB

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCX70 Preliminary NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  ORDERING INFORMATION Ordering Number Package BCX70G-AE3-R Note: Pin Assignment: E: Emitter B: Base C: Collector SOT-23  Pin Assignment 1 2 3

BCX70J

Abstract: 07 le 90
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation Storage Tem perature

Contextual Info: S 0 T 2 3 IMPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCX70 PARTMARKING DETAILS:BCX70G - AG BCX70GR - AW BCX70H - AH BCX70HR - 9P BCX70J - AJ BCX70JR - AX BCX70K - AK BCX70KR - P9 ABSOLUTE M A X IM U M RATINGS PARAMETER SYM BO L C o lle c to r-E m itte r V oltag e

MARKING CODE 21E SOT23

Contextual Info: BCW60, BCX70 NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW61, BCX71 PNP 2 1 Type Marking

x70g

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCX70GLT1 B C X70JLT1 BCX70KLT1 G e n e ra l P urpose T ran sisto rs NPN Silicon MAXIMUM RATINGS Symbol Value Unit C o lle c to r- E m itter Voltage V C EO 45 Vdc C o lle c to r-B a s e Voltage VCBO 45 Vdc E m itte r-B a s e Voltage

BCW60

Abstract: BCX70
Contextual Info: BCW60 BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 60A AA BCW 60B AB BCW 60C AC BCX70G AG BCX70H AH BCX70J AJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND

T3904

Abstract: 5kfl
Contextual Info: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS {TA=251C C h a ra c te ristic Collector-Base Voltage Coilector-Emitter Voltage Em itter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: BCW61., BCX71. PNP Silicon AF Transistors • For AF input stages and driver applications 2 3 • High current gain 1 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW60, BCX70 NPN • Pb-free (RoHS compliant) package

Contextual Info: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

transistor marking s79

Abstract: sot-23 marking code .S79 s79 marking code s79 IC marking Marking S79 marking code s79 sot-23 marking s79 BCX70G BCX70HE BCX70H
Contextual Info: BCX70G THRU BCX70K Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l For Switching and AF Amplifier applications.