BC338-25 PH Search Results

2n2222 -331 transistors

Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
Contextual Info: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111

BC337 figure

Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
Contextual Info: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO

BC337

Abstract: BC338 BC337 figure
Contextual Info: ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous

transistor bc237 bc337

Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage

CBC337

Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc

BC337

Abstract: BC338 BC337 MOTOROLA Motorola BC337
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

BC337 figure

Abstract: BC337 BC337 NPN transistor datasheet BC338
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45

bc337 pin out diagram

Abstract: bc337 BC337 figure BC33740 BC337-40 BC337-16 bc338-25 BC-337-16 BC337 pin out BC337-25
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25 Vdc Collector −Base Voltage VCBO 50 30 Vdc Emitter −Base Voltage

BC337

Abstract: bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc

bc337 pin out diagram

Abstract: BC337 BC337 figure bc337-25 bc338-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application
Contextual Info: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Package is Available* 2 BASE MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25

BC548 BC847

Abstract: BC338 BC546 BC338/BC546
Contextual Info: Philips Semiconductors Selector guide TYPE NUMBER Bipolar transistors V CEO •c V (mA) h FE Ptot (mW) min. fT(M IN ) max. typ (MHz) PAGE Leaded transistors NPN BC337 45 500 800 100 600 100 BC337A 60 500 800 100 600 100 59 BC338 25 500 800 100 600 100 59

BC337 pnp transistor

Abstract: TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification,

BC337A

Contextual Info: D BC337 BC337A BC338 ^ 5 3 ^ 3 1 Q027530 5T4 H A P X N AUER PHILIPS/DISCRETE _ / V _ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers.

BC33B

Abstract: bC338 philips BC337A BC337 typical application BC337 BC327 BC327A BC328 BC337-16 BC338
Contextual Info: BC337 BC337A BC338 PHILIPS I NTERNATIONAL 5bE D 711 00 2 b OOMM fla 0T1 « P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

BC331

Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
Contextual Info: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.

bc3378

Abstract: TRANSISTOR BC337-25 PNP BC337A BC337 Philips mar 722 BC337 BC337 sot54 bc337-40 npn transistor BC338 philips NPN general purpose transistor BC337
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337; BC337A; BC338 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 10 Philips Semiconductors Product specification

BC338

Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
Contextual Info: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.

bc109b datasheet

Abstract: BC337 BC547 bc237 bc546 bc108 TO-92 bc108b equivalent bc546 equivalent BC109B equivalent 2PC945K BC108 to92 2PC945P
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES NPN GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. V IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 800 60 2N2484 TO-18 60 50 360 250 2N4124

BC107 to92

Abstract: equivalent for BC337 NPN general purpose transistor BC337 BC327 NPN transistor datasheet bc337 transistor datasheet 2N4126 bc548 2N4124 bc548 Transistor BC177 transistor BC337-16 DATASHEET Transistor BC107
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 250 2N4124 NPN COMPL. PAGE 2N4126

BC327

Abstract: bc328 bc327a BC327 NPN transistor BC328-16 BC327-16 BC337 pnp transistor BC328 transistor bc32840 philips
Contextual Info: Philips Semiconductors Product specification BC327; BC327A; BC328 PNP general purpose transistors FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). 1 APPLICATIONS DESCRIPTION emitter 2 base 3 collector • General purpose switching and amplification,

Contextual Info: I b^E ]> • bbSBSBl 0027524 2T0 I BC327 BC327A BC328 APX N AMER PHILIPS/DISCRETE _ y SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended fo r use in driver and output stages of audio amplifiers.

bC328 philips

Abstract: bc32 transistor BC327A BC327 BC338 BC327-16 BC328 BC337 BC337A BC338 TRANSISTOR
Contextual Info: PHILIPS INTERNATIONAL SbE D BC327 BC327A BC328 711QÖEt. Q D H n Ä 2 bö3 H P H I N • SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.

BC327

Abstract: BC327-16 BC327-25 BC327A BC328 BC328-16 BC337 BC337A BC338 bC328 philips
Contextual Info: h ^E J> m 1^53^31 GG27S24 2T0 N AMER PHILIPS/DISCRE TE IAPX B C 327 BC327A B C 328 I SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO-92 envelopes, prim arily intended fo r use in driver and ou tput stages o f audio amplifiers. The BC327, BC327A, BC328 are complementary to the BC337, BC337A and BC338 respectively.