B235BD5 Search Results

Contextual Info: • B235bD5 DDTflTMG 7TT ■ SIEMENS 1/2 K b it 128/256 x 8 bit S e ria l CM O S E E P R O M s , I 2C S y n c h ro n o u s 2-W ire B u s , P ag e P ro tectio n Mode” S L x 24C01/02/P Preliminary Features • Data EEPROM internally organized as 128/256 bytes and 16/32 pages x 8 bytes

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

stm siemens

Abstract: t02 eeprom SIEMENS 24C164 interfacing sla 24c164 Q67100-H3498 Q67100-H3499 Q67100-H3502 Q67100-H3503 Q67100-H3504 24c164p
Contextual Info: • ûzasbos D c m o is stm SIEMENS 16 K b it 2048 x 8 b it S e ria l C M O S E E P R O M s, I 2C S y n c h ro n o u s 2 -W ire B u s , P age P ro te c tio n Mode S L x 24C 164/P Preliminary Features • Data EEPROM internally organized as 2048 bytes and 128 pages x 16 bytes

Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency

MSD2310TXV

Abstract: MIL-D-87157 MSD2310 7 dot LED LEVEL METER DRIVER
Contextual Info: SIEMENS AKTIENGESELLSCHAF SIEM EN S 47E D • 053SbDS □027DGC| 2 « S I E G MSD231 O T X V / T X V B t - hv- 3 7 YELLOW MSD2311TXV/TXVB h ig h eff . r e d MSD2312TXV/TXVB HIGH EFF. GREEN MSD2313TXV/TXVB red .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

Contextual Info: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:

Contextual Info: SIEMENS 3.3 V 2M x 64-Bit EDO-DRAM Module 3.3 V 2M x 72-Bit EDO-DRAM Module 168 pin unbuffered DIMM Module with serial presence detect HYM 64V2005GU-50/-60 HYM 72V2005GU-50/-60 Advanced Inform ation • 168 Pin JEDEC Standard, unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

amplitude modulator gilbert cell

Abstract: of fsk modulator using 555 halbleiter schaltungen marking code C3G SMD RF mixer 920 Mhz siemens rs 1007 TRANSISTOR SMD MARKING CODE 702 fsk modulator using 555 MARKING SMD TRANSISTOR DQ siemens VFT
Contextual Info: S IE M E N S ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz PMB 2201 Version 1.2 Preliminary Data Sheet 05.97 • ö235bos o c n ö b iz cm 2 m This Material Copyrighted By Its Respective Manufacturer [ Edition 05.97 Published by Siemens AG,

NTC 4,7 Siemens

Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Contextual Info: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions

siemens igbt BSM 100 gb

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d siemens igbt BSM 25 gb 100 d BSM 15 GB siemens igbt BSM 300 gb siemens igbt BSM 300 C67070-A2120-A67 igbt module bsm 300 SIEMENS 680
Contextual Info: SIEMENS BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Ul Type BSM 400 GB 60 DN2 600V 475A Package Ordering Code HALF-BRIDGE 2 C67070-A2120-A67 Maximum Ratings

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

Contextual Info: Semiconductor Group Siemens AG MOS Consumer Electronics Preliminary Edition Data Sheet 01.95 SDA 9270 Field Mixer Document number V66100-M570-X-1-7659 Date: 19.01.95 fl235b05 0 0 7 ^ 4 0 33*ì Page: Preliminary Data Sheet SDA 9270 Document Change Note OS1

TDA4918

Contextual Info: bOE D • 8235b05 0050042 403 M S I E 6 SIEMENS SIEMENS AKTIENGESELLSCHAF 'P SMPS - 1C with SIPMOS Driver Output S 'S 'n - ^ I TDA 4918 TDA 4919 Features • Switching frequency up to 300 kHz TDA 4919 or 150 kHz (TDA 4918) • Push-pull output driver with + 700 mA/ - 500m A

SIEMENS BST P45

Abstract: fet bd 736 SIEMENS BST P35 SIEMENS BST H 61 siemens cpu 314 SIEMENS BST n 35 80 80c537-n-t40 80C537-16-M SIEMENS BST g 02 60 B8005
Contextual Info: bOE ]> • ÖE3SbDS GQ47M7T bbl « S I E G SIEMENS AKTIENGESELLSCHAF SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM

D071521

Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
Contextual Info: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA f j = 7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA

Contextual Info: SIEMENS Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 200 A pprox. w e ig h t 0.0 5 g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features

Contextual Info: bGE D fiS3SbDS QD4b5bM I E 1* « S I E G "7~-A SFH 4446 SIEMENS TRANSCEIVER OPTICAL MODULE SIEMENS AKTIEN6ESELLSCHAF Package Dimensions in mm Detector a FEATU RES Maximum Ratings • Bidirectional Module with Integrated WDM • Emission Wavelenght: 1300 nm

Siemens MTT 95 A 12 N

Abstract: Siemens MTT 95 A 16 N siemens sab 82525 STT 3 SIEMENS siemens EM 235 cn PEB 2261 DCA 306 EPIC-1 pin diagram for IC 76733 ILP psu 180
Contextual Info: S IE M E N S Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features S w itching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

PMB2307R

Abstract: PMB2307 SIEMENS 2306 DECT siemens dect pmb 30MHZ "Mobile Communication ICs" PMB2307 equivalent
Contextual Info: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current