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    APT10M19BVFR Search Results

    APT10M19BVFR Datasheets (4)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    APT10M19BVFR
    Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF 33.03KB 2
    APT10M19BVFR
    Advanced Power Technology POWER MOS V 100V 75A 0.019 Ohm Original PDF 76.07KB 4
    APT10M19BVFR
    Microsemi Power MOS V FREDFET Original PDF 118.46KB 4
    APT10M19BVFRG
    Microsemi Power FREDFET; Package: TO-247 [B]; ID (A): 75; RDS(on) (Ohms): 0.019; BVDSS (V): 100; Original PDF 118.45KB 4

    APT10M19BVFR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    R7525

    Abstract: APT10M19BVFR
    Contextual Info: APT10M19BVFR 75A 0.019Ω 100V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    apt10m19bvfro-247mil-std-750r7525 PDF

    Contextual Info: APT10M19BVFR ADVANCED W 7Æ P o w e r Te c h n o l o g y ioov POWER MOS V i 75a 0.0190 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    apt10m19bvfro-247mil-std-750o-247ad PDF

    Contextual Info: APT10M19BVFR APT10M19SVFR 100V 75A POWER MOS V FREDFET 0.019Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10m19bvfrapt10m19svfro-247 PDF

    APT10M19BVFR

    Abstract: APT10M19SVFR
    Contextual Info: APT10M19BVFR APT10M19SVFR 100V 75A POWER MOS V FREDFET 0.019Ω BVFR D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    apt10m19bvfrapt10m19svfro-247 PDF

    tf8050

    Abstract: APT10M19BVFR
    Contextual Info: APT10M19BVFR 100V POWER MOS V 75A 0.019Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


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    apt10m19bvfro-247tf8050 PDF

    N mos 100v 100A

    Abstract: 75 LS 541
    Contextual Info: APT10M19BVFR ADVAN CED P o w er Te c h n o l o g y ’ 100V POWER MOS V 75A 0.019Í2 FREDFET Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    apt10m19bvfro-24700a/usmil-std-750+400a/jiso-247adn mos 100v 100a75 ls 541 PDF

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan
    apt1201r6bvrapt1201r5bvrapt1001rbvrapt10086bvr+16apt8075bvrapt8065bvrapt8056bvrapt6040bvrapt6035bvrapt6030bvrnt 6600 gapt60m75jvrapt30m40jvrapt20m45bapt50m50jvrapt12080jvr130-131apt5014lvrapt5020bvfrapt40m70jvr PDF

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original
    catalog mosfet transistor smdaptgu140a60taptgu180da120military resistors catalog+6aptlm50h10frtapt40m35jvfr24 volt output smps designapt5sc120kapt50m50jvrinduction furnace using igbt PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    mil-prf-19500iso9001apt10026jnapt1004rbn+8apt10050jnfredfetsapt8030jnapt4020bnapt5010lvfrapt5014lvrarf444apt10m09lvr PDF

    Contextual Info: • R A P T 10M 19B V F R A W .\A dvanced pow er Te c h n o lo g y " io o v POWER MOS V 75a 0.01 9q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    o-247apt10m19bvfr PDF

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


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    mil-prf-19500iso90015017bvr40814+85020bn1431 tapt5010lvrapt1001rblcapt10050apt30m85bvrapt5020blcapt2x101d60 PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Contextual Info: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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    sot-227 footprintvrf2933sp6-parf1511+6drf1200apt35gp120jdq2arf521to-247smps welder inverteraptgt25da120d1g PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Contextual Info: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original
    mj 1504 transistor equivalentarf450fredfetstransistors mj 1504+6apt1201r2bllapt60gf120jrdapt60m75jvrapt100s20bapt4014bvrapt1208 PDF

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original
    mil-prf-19500iso9001apt6015lvr5020bn+8apt6011lvfrarf4505017bvrapt2*61d120jfredfetsapt8015jvrapt100gf60lrapt5014lvr PDF