AP01C Search Results

AP01C

Contextual Info: SANKEN ELECTRIC CO., LTD. AP01C 1. Scope The present specifications shall apply to an AP01C. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040722 1／4 61426-01 SANKEN ELECTRIC CO., LTD.

AP01C

Abstract: EP01C
Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. AP01C I F (AV) (A) VRM (V) IFSM (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot VF (V) max IF (A) 4.0 0.2 IR IR (H) (µA) (µA) VR = VRM

AP01C

Contextual Info: AP01C FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 0.2 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Pb / RoHS Free

AP01C

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com AP01C IATF 0113686 SGS TH07/1033 FAST RECOVERY RECTIFIER DIODE PRV : 1000 Volts Io : 0.2 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current

Contextual Info: Fast-Recovery Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. AP01C VRM （V） I F（ AV） （A） IFSM （A） IR（H） IR （ A） （μA） VR ＝VRM VR ＝VRM max IF max Ta＝100℃ max （A）

FMX-G12S

Abstract: FMP-G12S FMPG12S
Contextual Info: ULTRA-FAST-RECOVERY RECTIFIER DIODES Type No. V rm lo If s m V (A) (A) VF Ir Max. @ lF trr (mA) (ns) Type No. V rm lo If s m (V) (A) (A) 1.5 (A) 25 1.0 10nA 50 RG 2Y 70 SFPL-52 200 0.9 SFPL-62 200 1.0 RG 2Z 200 AL01Z 200 1.0 25 0.98 1.0 0.1 50 RG 2 400 1.2

AP01C

Abstract: EG01C EP01C FMG-G2CS
Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max Ta IF V = V V = V R RM R RM (°C) (A) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

10zrl

Contextual Info: VRM V Package Part Number I F (AV) (A) IFSM (A) 50Hz Half-cycle Sinewave Single Shot Tj (°C) Tstg (°C) VF (V) max IR (µA) IR (H) (mA) IF V = V V = V R RM R RM (A) max max t rr Ta (°C) t rr 1 t rr 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

FMD-4206S

Abstract: FMD4206S 4206s diodes sanken
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 600 800 1000 Package Axial Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F2Pin FMX-G26S 10.0 TO-220F2Pin FMD-G26S 10.0 TO-220F2Pin 20.0 IF (AV) (A) IR IR(H) (µA) (mA) V R=VRM VR=VRM max max trrq

fmgg2c

Abstract: FMG-G3CS
Contextual Info: Package I F AV (A) Part Number IFSM (A) 50Hz Tj (°C) 1000 Frame-2Pin IR (H) (mA) t rr VF (V) max IF V = V V = V Ta R RM R RM (A) (°C) max max Half-cycle Sinewave Single Shot Axial IR (µA) Tstg (°C) 1 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

AP01C

Abstract: EG01C EP01C FMC-26UA FMC-28U FMC-28UA FMC-G28S FMC-G28SL FMD-G26S FMXA-1106S
Contextual Info: 4-3 Ultrafast Recovery Diodes VRM V 600 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F2Pin FMX-G26S 10.0 TO-220F2Pin FMD-G26S TO-220F2Pin FMXA-1106S IF (AV) (A) 10.0 1.0(2.0) Axial(φ6.5/φ1.4)

RL 4A

Contextual Info: lUltra-Fast-Recovery Rectifier Diodes Ta=25c V f 4 Is'S i fjtfs ÜV (niA) 1 max • fta * “ max max *n Vkm SFPL 52 200 •62 200 fi'm 0.9 To” 70 01Z 200 01 400 01A 600 O.b 70 1.0 0 !Z 400 01A 600 01 C EG 1Y _ 1.0 70 1_ 400 Z 1^ 600 _ _ _ 400 .2 0.1

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

FMX-12S

Abstract: RBA-402L FMPG12
Contextual Info: 5-3. Ultra-Fast Recovery Rectifier Diodes Surface Mount Type Type No. VRM V IF (AV) (A) SFPL-52 0.9 -62 1.0 SPX-G32S 200 -62S* I FSM Tj (A) (Ta = 25°C) Tstg VF (V) IR (µA) max per max per element element (°C) trr1 (ns) trr2 (ns) max max 50 35 Fig. No.

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)