AM82731 Search Results

Contextual Info: SGS1H0MS0N 57. AM82731-012 ;IL11 ¥ M [ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA i R E F R A C T O R Y /G O L D M ETA LL IZA TIO N • E M IT T E R S ITE BALLASTED ■ LO W T H E R M A L R E S IS T A N C E ■ IN P U T /O U T P U T M A T C H IN G

Contextual Info: SGS-THOMSON AM82731-050 1H[ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVER­ DRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM82731-050

Abstract: 6.0 ca
Contextual Info: AM82731-050 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-050 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

AM82731-006

Abstract: S042 radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-006 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN

radar amplifier s-band

Abstract: radar amplifier s-band 2.7 2.9 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ AM82731-025
Contextual Info: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING

s-band 50 Watt power amplifier DATASHEET

Abstract: AM82731-050 20n50 radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM82731-012

Contextual Info: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 12 W MIN. WITH 6.0 dB GAIN

AM82731-050

Abstract: radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-050 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM82731

Contextual Info: AM82731 NPN RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

8w RF POWER TRANSISTOR NPN

Abstract: gold capacitor RF POWER S-band TRANSISTOR 82731 thomson capacitor AM82731-003 S042 82731003 radar amplifier s-band 2.7 2.9 GHZ
Contextual Info: AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

AM82731-012

Contextual Info: AM82731-012 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2L FLG The AM82731-012 is a Common Base Device Designed for Pulsed SBand Pulse output and driver Radar Amplifier Applications. FEATURES INCLUDE: • Input/Output Matching • Gold Metallization

AM82731-003

Abstract: TRANSISTOR RF 1003 333p
Contextual Info: AM82731-003 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-003 is a Common Base Device Designed for Pulsed SBand Radar Pulse Driver Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization

AM82731-012

Contextual Info: AM82731-012 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 6.0 dB GAIN

Contextual Info: AM82731 NPN RF POWER TRANSISTOR DESCRIPTION: The AM82731 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications. PACKAGE STYLE 400 2L FLG E FEATURES INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting

AM82731-025

Contextual Info: AM82731-025 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING

AM82731-006

Abstract: S042 medium POWER TRANSISTOR 1.5w
Contextual Info: AM82731-006 . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W. MIN. WITH 5.6 dB GAIN

Contextual Info: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •

AM82731-001

Abstract: 395 transistor TRANSISTOR RF 1003 m 052
Contextual Info: AM82731-001 NPN RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 400 2NL FLG The AM82731-001 is a Common Base Device Designed for Pulsed SBand Radar Amplifier Applications. A FEATURES INCLUDE: .025 x 45° 4x .062 x 45° 2X B • Input/Output Matching • Gold Metallization

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MRF648

Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC

Contextual Info: SILICON POWER TRANSISTORS Ç - pBaAiN RA D fAt R Q Ti iOmR Q a nD u H AU H Ti R kA aN nQ sI is s _ I w m SCS "THOMSON The industry leader in S-Band Power, SGS-THOMSON offers a complete line of short, medium and long pulse transistors for civil and military radar applications up to 3.5 GHz. Refractory gold metallization and emitter site-ballasting

"Phase Discriminator"

Abstract: Hewlett-Packard transistor microwave AM81214-060 AM82731-050 AN569 transistor study rf power transistor
Contextual Info: AN569 APPLICATION NOTE PHASE MEASUREMENT AND CHARACTERIZATION OF RF MICROWAVE POWER TRANSISTORS M. Deiss - R. Marley 1. ABSTRACT The continuing efforts to design and produce phased array radar systems have resulted in an increased need for relative insertion phase length data on individual microwave power transistors. The inclusion of

2SC636

Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE