AI1013 Search Results

"15 GHz" power amplifier 41dBm

Abstract: AN0017 MO-220
Contextual Info: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 NC D3 NC D4 GND GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 NC 3 22 NC GND 4 21 GND RFIN 5 20 RFOUT GND 6 19 GND NC 7 18 NC NC 8 17 NC 9 10 11 12 13 14 15 16 GND NC

M69KB128AA

Abstract: BCR10
Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

LA 7673 diagrams

Abstract: National PC87591 schematic circuit for bios programer thermistor ttc 103 TTC 103 thermistor PC87591S IO CHIP TTC 474 thermistor FB121 ROHM capacitor TTC 103 ntc thermistor
Contextual Info: March 2002 Revision 1.06 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,

schematic circuit for bios programer

Abstract: LA 7673 diagrams QVC12 TTC 103 ntc thermistor TIS153 thermistor ttc 101 TTC 103 thermistor thermistor ttc 103 NTC TTC 103 thermistor PA 0016
Contextual Info: May 2001 Rev. 1.03 PC87591E and PC87591S LPC Mobile Embedded Controller General Description Like members of National’s SuperI/O family, the PC87591x is PC01 and ACPI compliant. The National Semiconductor PC87591E and PC87591S are highly integrated, embedded controllers with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that use the Low

CR10

Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

P46H

Abstract: TFBGA105
Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers

BGA149

Abstract: TFBGA149 BGA107
Contextual Info: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • ■ Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR

RAS 0510

Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
Contextual Info: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)

NAND98W3M0

Abstract: NAND98R3M0 NAND99R NAND98R
Contextual Info: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program

Contextual Info: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes

transistor d1415 pin configuration

Abstract: F9321 book national semiconductor diode PJ 0416 LA 7673 diagrams Siemens Digital Book F9221 fe8616 F9301 SiEMENS EC 350 99
Contextual Info: Voyager Rev 0.13 Voyager LPC Mobile Embedded Controller General Description Outstanding Features The Voyager is a highly integrated, embedded controller with an embedded-RISC core and integrated, advanced functions. Targeted for a wide range of portable applications that

M69KB096AB

Abstract: synchronous nor flash A0-A21 BCR10 tvs array bare die
Contextual Info: M69KB096AB 64 Mbit 4 Mb x16 , 104MHz Clock Rate, 1.8V Supply, Bare Die, Burst PSRAM PRELIMINARY DATA Features summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ User-selectable Operating Modes

pc97551

Abstract: National PC87591l Diode P 619 PC MOTHERBOARD schematic diagram protocol OBD 8042 intel kbc Ic 6116 pin configuration details IC 74hcxx PA 0016 sot 363 Package h13
Contextual Info: April 2004 Revision 1.2 PC87591L-N05 LPC Mobile Embedded Controller General Description The National Semiconductor PC87591L-N05 is a highly integrated embedded controller with an embedded RISC core and integrated advanced functions. This device is targeted

siemens F716

Abstract: f9321 book national semiconductor diode PJ 0416 National PC87591 National PC87591l 74x541 74x377 pj 87 diode TCS 4199
Contextual Info: To all our customers We are pleased to inform you that National Semiconductor Corporation's Advanced PC APC Division joined Winbond Electronics Corporation on May 5th 2005. As a result, in this document “National Semiconductor Corporation” and “National” should be understood as

National PC87591

Abstract: TTC 103 thermistor LA 7673 diagrams NTC TTC 103 thermistor TTC 103 ntc thermistor thermistor ttc 103 SIEMENS BST INTEL D 2816 LA 4138 siemens F716
Contextual Info: March 2004 Revision 1.07 PC87591E, PC87591S and PC87591L LPC Mobile Embedded Controllers General Description The PC87591x interfaces with the host via an LPC interface that provides the host with access to the Keyboard and embedded controller interface channels, integrated functions,

BGA bga 10x13

Abstract: NAND FLASH BGA st nand flash application note BGA137 MCP NAND DDR NAND512-M NAND01G-M NAND256-M NAND256R3M0
Contextual Info: NAND256-M NAND512-M, NAND01G-M 256/512Mb/1Gb x8/x16, 1.8/3V, 528 Byte Page NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PRELIMINARY DATA Feature summary • Multi-Chip Packages – 1 die of 256 Mb, 512 Mb (x8/ x16) NAND Flash + 1 die of 256 Mb (x16) SDR

Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memories PRELIMINARY DATA Features summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers – VPP = 9V for fast program (12V tolerant)

synchronous nor flash

Abstract: BCR10 M69KB128AB bcr100
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8 V Supply, Burst PSRAM Preliminary Data Feature summary • Supply voltage – VCC = 1.7 to 1.95 V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable operating modes – Asynchronous modes: Random Read, and

bc 107 common base h parameters

Abstract: M58PR256J M58PR512J CR10
Contextual Info: M58PR256J M58PR512J 256 Mbit or 512 Mbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program

BCR10

Abstract: M69KB128AB
Contextual Info: M69KB128AB 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ User-selectable Operating Modes – Asynchronous Modes: Random Read, and

TFBGA105

Abstract: CR10 M58PR001LE M58PR512LE
Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program