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    M58PR512LE Search Results

    M58PR512LE Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    M58PR512LE
    Numonyx 512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Original PDF 2.21MB 123
    M58PR512LE
    STMicroelectronics 256-Mbit, 512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Original PDF 802.38KB 119
    M58PR512LE96ZAD5
    Numonyx 512-Mbit or 1-Gbit (x 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Original PDF 2.21MB 123
    SF Impression Pixel

    M58PR512LE Price and Stock

    Micron Technology Inc

    Micron Technology Inc M58PR512LE96ZAD5

    Flash, 32MX16, 96ns, PBGA105
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58PR512LE96ZAD5 5,610
    • 1 -
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    Micron Technology Inc M58PR512LE96ZAC5

    Flash, 32MX16, 96ns, PBGA107
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian M58PR512LE96ZAC5 2,696
    • 1 -
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    M58PR512LE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CR10

    Abstract: M58PR001LE M58PR256LE M58PR512LE a*12864
    Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original
    m58pr256lem58pr512lem58pr001le256-mbit+3512-mbitcr10a*12864 PDF

    P46H

    Abstract: TFBGA105
    Contextual Info: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers


    Original
    m58pr256lem58pr512lem58pr001le256-mbit+3512-mbitp46htfbga105 PDF

    Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58pr512lem58pr001le512-mbit8819h PDF

    Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58pr512lem58pr001le512-mbitm58pr512le96zb5 PDF

    st MCP

    Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x16, Multiple Bank, Multilevel, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program


    Original
    m58pr512lem58pr001le512-mbitm58pr001le96z5e+1st mcp PDF

    TFBGA105

    Abstract: CR10 M58PR001LE M58PR512LE
    Contextual Info: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program


    Original
    m58pr512lem58pr001le512-mbittfbga105+1cr10 PDF

    M39P0R1080E4

    Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD
    Contextual Info: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)


    Original
    m39p0r9080e4m39p0r1080e4tfbga16564-bit+4m58pr001lem58pr512lem39p0r09080e4bcas sd PDF

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Contextual Info: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original
    at49sv163d48-pin48-balls29as016j+12en29sl800s29as00gestmx29gl25628f512p30 numonyxm29w256g28f00ap30w25q128mx25l644528f00am29ewm29dw127g28f128p30pf38f3040m0y3d PDF