AFM02N5-55
Contextual Info: Low Noise Packaged GaAs MESFET ED Alpha m i m u T iir in iiiiiiii I iiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii ii iiir AFM02N5-55, AFM02N5-56 Features Drain Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz
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afm02n5-55afm02n5-56 |
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9435 GM
Abstract: ms 16881 GA 1176 MESFET S parameter
Contextual Info: Surface Mount GaAs MESFET Chip AFM02N6-032 Features SOT-143 • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 3 4 0.083 (2.10 mm) MIN.
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afm02n6-032ot-1436/99a9435 gm+3ms 16881ga 1176mesfet s parameter
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AFM02N5-55
Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Contextual Info: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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afm02n5-55afm02n5-56as004l2-11at001d3+14ak004m2-11as004m1-08at001d4-31ak004r2-11as004m1-11at001d6-31ad004t2-00ad004t2-11ak006r2-01ak006r2-10as006m1-01as006m1-10s44392260
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4511 gm
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dimensions in Microns Thickness = 100 Features 78 50 Low Noise Figure, 1.0 dB at 12 GHz I High Associated Gain, 9.5 dB at 12 GHz 50 ¿ U - J i _ 350 High MAG, > 12 dB at 12 GHz [50 125 0.25 u,m Ti/Pt/Au Gates Passivated Surface
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AFM04P2-000
Abstract: AFP02N3-000 afp02n3-213
Contextual Info: Section 1 GaAs FETs and PHEMTs Numerical Index Part Number Page AFM02N6-000 1-7 AFM02N6-032 1-3 AFM02N6-212 1-11 AFM02N6-213 1-11 AFM04P2-000 1-26 AFM04P3-104 1-28 AFM04P3-213 1-31 AFM04P3-214 1-31 AFM06P2-000 1-34 AFM08P2-000 1-36 AFP02N3-000 1-15 AFP02N3-104
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afm02n6-000afm02n6-032afm02n6-212afm02n6-213+8afm04p2-000afm04p3-104afm04p3-213afm04p3-214afm06p2-000afm08p2-000afp02n3-000afp02n3-213
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9435 GM
Abstract: GA 1176 AFM02N6-032 AFM02N6
Contextual Info: Surface Mount GaAs MESFET Chip AFM02N6-032 Features • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz SOT-143 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 4 0.083 (2.10 mm) MIN.
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afm02n6-032ot-1439/99a9435 gm+2ga 1176afm02n6
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4511 gm
Abstract: um 5506 gm 4511 AFM02N6-000 AFM02N6
Contextual Info: Low Noise GaAs MESFET Chip AFM02N6-000 • Low Noise Figure, 1.0 dB @ 12 GHz ■ Passivated Surface 100 ■ 0.25 µm Ti/Pd/Au Gates 200 ■ High MAG, >12 dB @ 12 GHz 300 ■ High Associated Gain, 9.5 dB @ 12 GHz 400 Dims µms : X = 400, Y = 620 Features 100
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afm02n6-0006/99a4511 gmum 5506+2gm 4511afm02n6
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PJ 0459
Abstract: 1348 OH CD 4544 AFM02N6-032 9435 GM
Contextual Info: •Alpha Surface Mount GaAs MESFET Chip AFM02N6-032 S O T-143 Features 4 GHz, ■ Low Noise Figure, 0.55 dB 2.2 dB @ 12 GHz 0.110 2.80 m m MIN. 0 .120 (3.04 m m ) MAX. • 0 .0 7 6 (1.92 mm ) REF. 0 .0 2 0 (0.50 m m ) R E F .- High Gain, 16 dB ( 4 GHz,
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afm02n6-032ot-1439/99apj 0459+31348 ohcd 45449435 gm
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9435 GM
Abstract: AFM02N6
Contextual Info: 03Alpha Surface Mount GaAs MESFET AFM02N6-032 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel
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03alphaafm02n6-032t-1439435 gm+1afm02n6
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95210
Contextual Info: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET
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afm02n6-00095210 |
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CI 7422
Abstract: AFM02N6-000
Contextual Info: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has
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afm02n6-0006/99aci 7422 |
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AFM02N5-00
Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Contextual Info: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip
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afm02n5-00as004l2-11at001d3ak004m2-11+14as004m1-08at001d4-31ak004r2-11as004m1-11at001d6-312b25gm 45114511 gmad004t2-00ad004t2-11ae002m2-29vp 16029ak006r2-01ak006r2-10
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vp 3082
Abstract: AFM02N6-212 AFM02N6-213 MESFET
Contextual Info: Low Noise Packaged GaAs MESFET Chips AFM02N6-212, AFM02N6-213 Features 213 Drain • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz Source Source ■ High MAG, > 8.5 dB @ 12 GHz Gate Drain Source ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface
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afm02n6-212afm02n6-2136/99avp 3082+1mesfet
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SMP1301-01
Abstract: SC9103-10 SMS3994 SMP1301-05 SMP1300 at002d8-25 A60030P535 spd 3465-18 SMP1312-12 SMV1400-109
Contextual Info: Part Number Index A lphan um erical Index for G a A s MMIC and F E T P ro d u cts PART NUMBER PAGE ADC02D2-12 5 ADH01D2-24 5 ADHD1D2-24 5 AF002C1-32 4 AF002C1-39 4 AF002C4-39 4 AF002N2-32 6 7 AF035P1-00 7 AFM02N5-00 AFM02N5-55/56 7 AFM02N8-32 7 7 AFM06P2-00
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adc02d2-12adh01d2-24adhd1d2-24af002c1-32+16af002c1-39af002c4-39af002n2-32af035p1-00afm02n5-00afm02n5-55/56smp1301-01sc9103-10sms3994smp1301-05smp1300at002d8-25a60030p535spd 3465-18smp1312-12smv1400-109
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L to Ku Band Low Noise GaAs MESFET
Abstract: AFM02N6-212 AFM02N6-213 S-12 61770
Contextual Info: Low Noise Packaged GaAs MESFET Chips ESAlpha AFM02N6-212, AFM02N6-213 Features 213 • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz ■ High MAG, > 8.5 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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afm02n6-2126/99al to ku band low noise gaas mesfetafm02n6-213+2s-1261770
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AFM02N8-32
Abstract: 02N5 02N50 AF035P1-00
Contextual Info: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400
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02n5-00afp02n2-00afp02n8-00afm02n5-55/56+8afp02n2-55/56afp02n8-55/56afm02n8-32-55z-56af035p1-00afm06p2-0002n502n50
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AFP02N2
Contextual Info: Section 3 GaAs FETs and High Frequency GaAs MMICs Numerical Index Part Number Page Part Number Page AA022N1-00 3-18 AFM06P2-00 3-42 AA022N1-65 3-19 AFM08P2-00 3-44 AA022P1-00 3-13 AFP02N2-00 3-58 AA022P1-65 3-16 AFP02N2-55 3-62 AA028N1-00 3-29 AFP02N2-56 3-62
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aa022n1-00aa022n1-65aa022p1-00aa022p1-65+7aa028n1-00aa028p1-00aa028p2-00aa028p3-00aa035p2-00aa035p3-00afp02n2
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