AFM02N6 Search Results

9435 GM

Abstract: ms 16881 GA 1176 MESFET S parameter
Contextual Info: Surface Mount GaAs MESFET Chip AFM02N6-032 Features SOT-143 • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 3 4 0.083 (2.10 mm) MIN.

AFM04P2-000

Abstract: AFP02N3-000 afp02n3-213
Contextual Info: Section 1 GaAs FETs and PHEMTs Numerical Index Part Number Page AFM02N6-000 1-7 AFM02N6-032 1-3 AFM02N6-212 1-11 AFM02N6-213 1-11 AFM04P2-000 1-26 AFM04P3-104 1-28 AFM04P3-213 1-31 AFM04P3-214 1-31 AFM06P2-000 1-34 AFM08P2-000 1-36 AFP02N3-000 1-15 AFP02N3-104

9435 GM

Abstract: GA 1176 AFM02N6-032 AFM02N6
Contextual Info: Surface Mount GaAs MESFET Chip AFM02N6-032 Features • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz SOT-143 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 4 0.083 (2.10 mm) MIN.

4511 gm

Abstract: um 5506 gm 4511 AFM02N6-000 AFM02N6
Contextual Info: Low Noise GaAs MESFET Chip AFM02N6-000 • Low Noise Figure, 1.0 dB @ 12 GHz ■ Passivated Surface 100 ■ 0.25 µm Ti/Pd/Au Gates 200 ■ High MAG, >12 dB @ 12 GHz 300 ■ High Associated Gain, 9.5 dB @ 12 GHz 400 Dims µms : X = 400, Y = 620 Features 100

PJ 0459

Abstract: 1348 OH CD 4544 AFM02N6-032 9435 GM
Contextual Info: •Alpha Surface Mount GaAs MESFET Chip AFM02N6-032 S O T-143 Features 4 GHz, ■ Low Noise Figure, 0.55 dB 2.2 dB @ 12 GHz 0.110 2.80 m m MIN. 0 .120 (3.04 m m ) MAX. • 0 .0 7 6 (1.92 mm ) REF. 0 .0 2 0 (0.50 m m ) R E F .- High Gain, 16 dB ( 4 GHz,

9435 GM

Abstract: AFM02N6
Contextual Info: 03Alpha Surface Mount GaAs MESFET AFM02N6-032 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel

95210

Contextual Info: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET

CI 7422

Abstract: AFM02N6-000
Contextual Info: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has

vp 3082

Abstract: AFM02N6-212 AFM02N6-213 MESFET
Contextual Info: Low Noise Packaged GaAs MESFET Chips AFM02N6-212, AFM02N6-213 Features 213 Drain • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz Source Source ■ High MAG, > 8.5 dB @ 12 GHz Gate Drain Source ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface

Contextual Info: Low Noise Packaged GaAs MESFET AFM02N&-212, AFM02N6-213 Features Drain • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ^im Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

L to Ku Band Low Noise GaAs MESFET

Abstract: AFM02N6-212 AFM02N6-213 S-12 61770
Contextual Info: Low Noise Packaged GaAs MESFET Chips ESAlpha AFM02N6-212, AFM02N6-213 Features 213 • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz ■ High MAG, > 8.5 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package