98567 Search Results

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V

Contextual Info: □IXYS Advanced Technical Information LowVrP, „ üh sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V ^C25 V CE(sat) Combi Pack AL Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V CGR Tj = 25°C to 150°C; RGE = 1 M£i

LT3973-3.3

Abstract: LT3971-3.3
Contextual Info: A1234156789A1BCDCAAAAEFFCFDACBEA A  1234356789695A9B7C52D85E7FF 9A3297E7174B7F F3 !" #$%# &' ! 3A653987 3 !"

TA 8644

Abstract: BU124 BUI2400 BUI2408 d 8145
Contextual Info: « INVERTER Vln vs. Vout IC : BU12488 E CHRRRCTERISTICS » Vdd : s m Vout m Vin m « INVERTER GRIN/PHRSE vs. IC : BUI2488 E Ft - 70.3 [MHz] FREQUENCY CHRRRCTERISTICS Vdd : S CV3 P.H - 92.1 Cd«g] Freq. CNHzl — > 0 CdBJ » IC dependence of oscillating characteristics

Contextual Info: nixYS Advanced Technical Information Low VCE sat IGBT with Diode IXGH 28N60BD1 VCES IXGT 28N60BD1 IC25 V CE(sat) = 600 V = 40 A = 2£ , U0 V V Combi Pack Maximum Ratings Symbol Test Conditions v T j = 25° C to 1 50° C 600 V V CGR T , = 25° C to 150° C; RGE„ = 1 MQ

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

AIC-7899

Abstract: PC99 aic 3860 AIC3860 7899
Contextual Info: R AIC -7899 Dual-Channel PCI-to-Ultra160/m SCSI Single-Chip Host Adapter Overview Product Benefits Up to 320 MByte/sec data transfer rates on dual Ultra160/m SCSI channels 66 MHz, 64-bit PCI interface that supports zero wait-state memory; also operates on 33 MHz, 32-bit

MCT1458

Abstract: mct1458p1 T1458 mct1458c 98567
Contextual Info: Order this document by MCT1458/D @ M O T O R O L A M C T1458, C Internally Com pensated, High Perform ance Dual O perational Am plifier The MCT1458, C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the

F100141

Abstract: F100341 98567
Contextual Info: 100141 National Semiconductor F100141 8-Bit Shift Register General Description The F100141 contains eight edge-triggered, D-type flipflops with individual inputs Pn and outputs (Qn) for parallel operation, and with serial inputs (Dn) and steering logic for

Contextual Info: Low VCE sat IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V IC25 = 40 A VCE(sat) = 2.0 V Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM

AIC-7899

Abstract: 7899 ADAPTEC AIC-3860 Ultra160 PC99 AIc SCSI adaptec aic
Contextual Info: R AIC -7899 Dual-Channel PCI-to-Ultra160/m SCSI Single-Chip Host Adapter Overview Product Benefits Up to 320 MByte/sec data transfer rates on dual Ultra160/m SCSI channels 66 MHz, 64-bit, PCI interface that supports zero wait-state memory; also operates on 33 MHz, 32-bit