975PS Search Results

Contextual Info: Micrel PRECISION 1:8 LVPECL FANOUT BUFFER WITH 2:1 RUNT PULSE ELIMINATOR INPUT MUX SY89837U Precision Edge SY89837U FEATURES • Selects between two clocks, and provides 8 precision, low skew LVPECL output copies ■ Guaranteed AC performance over temperature and

32-PIN

Abstract: SY89837U SY89837UMG SY89837UMGTR SY89837UMI SY89837UMITR
Contextual Info: Micrel, Inc. PRECISION 1:8 LVPECL FANOUT BUFFER WITH 2:1 RUNT PULSE ELIMINATOR INPUT MUX Precision Edge SY89837U ® Precision Edge SY89837U FEATURES „ Selects between two clocks, and provides 8 precision, low skew LVPECL output copies „ Guaranteed AC performance over temperature and

EDE5108AJSE-6E-E

Abstract: EDE5104AJSE EDE5104AJSE-8E-E EDE5108AJSE EDE5116AJSE ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5104AJSE 128M words x 4 bits EDE5108AJSE (64M words × 8 bits) EDE5116AJSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  32M words × 4 bits × 4 banks (EDE5104AJSE)

DDR2-667

Abstract: DDR2-800 EDE5108AJBG-8E-E EBE11UD8AJUA-6E-E SSTL-18
Contextual Info: PRELIMINARY DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UD8AJUA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization ⎯ 128M words × 64 bits, 2 ranks • Mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in

DDR2-667

Abstract: EDE5104AJSE-8E-E udqs
Contextual Info: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2-667

Abstract: DDR2-800 EDE1108ACSE-6E-E
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EDE5116AHSE

Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5108AHSE 64M words x 8 bits EDE5116AHSE (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization ⎯ 16M words × 8 bits × 4 banks (EDE5108AHSE) ⎯ 8M words × 16 bits × 4 banks (EDE5116AHSE)

SY89112U

Abstract: SY89113U SY89113UMG SY89113UMGTR 1b 12
Contextual Info: SY89113U 2.5V Low Jitter, Low Skew 1:12 LVDS Fanout Buffer with 2:1 Input MUX and Internal Termination General Description The SY89113U is a 2.5V low jitter, low skew, 1:12 LVDS fanout buffer optimized for precision telecom and enterprise server distribution applications. The

DDR2-667

Abstract: EDE5104AJSE-8E-E EBE10AD4AJFA-6E-E max1546
Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AJFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

Contextual Info: DATA SHEET 1G bits DDR2 SDRAM EDE1108AJBG-1 128M words x 8 bits EDE1116AJBG-1 (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks (EDE1108AJBG)  8M words × 16 bits × 8 banks (EDE1116AJBG)

VDS1120

Abstract: VDS2110 VDS5010 VDS3110 ECL10KH VDS1110 VDS2120 VDS5020 ECL10K 0-30ns
Contextual Info: Variable Delay Lines VDS Ultra High-Speed Variable Delay Lines The VDS family of high-speed vailable delay lines is available in a dual in-line package for a variety of types in either standard or custom specifications. FEATURES • High-speed SMD delay lines that have achieved 40 step

DDR2 SDRAM component

Abstract: DDR2-800 E1295E40
Contextual Info: DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE10UE8AEFA 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2-667

Abstract: DDR2-800
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8ACWB 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

DDR2 DIMM 240 pin names

Abstract: DDR2-667 EDE5104AJSE-8E-E EBE21AD4AJFA-6E-E EBE21AD4AJFA 2843ps
Contextual Info: DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE21AD4AJFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 36 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

E0901E20

Abstract: EBE41AE4ABHA DDR2-667
Contextual Info: DATA SHEET 4GB Registered DDR2 SDRAM DIMM EBE41AE4ABHA 512M words x 72 bits, 2 Ranks Specifications Features • Density: 4GB • Organization  512M words × 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM with sFBGA • Package: 240-pin socket type dual in line memory

EDE1116ACSE-6E-E

Abstract: DDR2-667 DDR2-800 EDE1116ACSE-8E-E DDR2 sodimm pcb layout
Contextual Info: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE11UE6ACSA 128M words x 64 bits, 2 Ranks Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 2 ranks • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in

EDE1108AFBG

Abstract: EDE1108AFBG-8E-F DDR2-667 DDR2-800 ELPIDA DDR2 SDRAM
Contextual Info: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1108AFBG 128M words x 8 bits Specifications Features • Density: 1G bits • Organization  16M words × 8 bits × 8 banks • Package  60-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V

E1060E20

Abstract: EDE1108ACSE-6E-E DDR2-667 DDR2-800 EBE21EE8ACFA-8G-E
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21EE8ACFA 256M words x 72 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

E1296E40

Abstract: DDR2-800 EBE21UE8AEFA-8G-F
Contextual Info: DATA SHEET 2GB Unbuffered DDR2 SDRAM DIMM EBE21UE8AEFA 256M words x 64 bits, 2 Ranks Specifications Features • Density: 2GB • Organization  256M words × 64 bits, 2 ranks • Mounting 16 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory

EDE5116AJBG-6E-E

Abstract: EDE5116AJBG-8E-E EDE5116AJBG DDR2-667 DDR2-800 EDE5108AJBG EDE5108AJBG-6E-E EDE5108AJBG-8E-E EDE5116AJBG-8E ELPIDA DDR2 SDRAM
Contextual Info: DATA SHEET 512M bits DDR2 SDRAM EDE5108AJBG 64M words x 8 bits EDE5116AJBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks (EDE5108AJBG)  8M words × 16 bits × 4 banks (EDE5116AJBG)

DDR2-667

Abstract: EDE5116AJBG
Contextual Info: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM WTR Wide Temperature Range EDE5116AJBG-LI (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package  84-ball FBGA  Lead-free (RoHS compliant)

EBE10UE8AFSA

Abstract: E1450E20 EDE1104AFSE EDE1108AFSE DDR2-667 DDR2-800 EDE1108AFSE-6E
Contextual Info: DATA SHEET 1GB DDR2 SDRAM SO-DIMM EBE10UE8AFSA 128M words x 64 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 64 bits, 1 rank • Mounting 8 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 200-pin socket type small outline dual in

EDE1116ACSE-LI

Abstract: DDR2-667
Contextual Info: DATA SHEET 1G bits DDR2 SDRAM WTR Wide Temperature Range EDE1116ACSE-LI (64M words x 16 bits) Specifications Features • Density: 1G bits • Organization  8M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V

DDR2-400

Abstract: DDR2-533 DDR2-667 EBE10RD4AJFA EBE10RD4AJFA-4A-E EBE10RD4AJFA-5C-E EBE10RD4AJFA-6E-E max1546
Contextual Info: DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4AJFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory