97 DIODE AXIAL Search Results

40HFL40S02

Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460 D1297
Contextual Info: PD-2.047 rev. D 12/97 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up

50SQ080

Abstract: IRFP460 application 40HFL40S02 50SQ 50SQ100 IRFP460
Contextual Info: PD-2.060 rev. C 11/97 50SQ. SERIES SCHOTTKY RECTIFIER 5 Amp Description/Features Major Ratings and Characteristics The 50SQ. axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up

os TT 2222

Abstract: TT 2222 90SQ 40HFL40S02 90SQ035 90SQ040 90SQ045 IRFP460
Contextual Info: PD-2.222 rev. B 12/97 90SQ. SERIES SCHOTTKY RECTIFIER 9 Amp Description/Features Major Ratings and Characteristics The 90SQ axial leaded Schottky rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable

40HFL40S02

Abstract: 95SQ015 IRFP460
Contextual Info: PD-2.273 rev. A 12/97 95SQ015 SCHOTTKY RECTIFIER 9 Amp Description/Features Major Ratings and Characteristics Characteristics The 95SQ015 axial leaded Schottky rectifier has been optimized for ultra low forward voltage drop specifically for the ORing of parallel power supplies. The proprietary barrier

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

SMCJ170A

Abstract: 97 diode axial SMBJ170A
Contextual Info: CONTENTS SURFACE MOUNT DEVICES Device DescriDtion LC01-6 LC03-6 LCDA05- LCDA24 1500 Watt Low Capacitance 360 Watt Low Capacitance Preliminary Data 300 Watt Low Capacitance Array 300 Watt Low Capacitance SL05 - SL24 SLVDA2.8 & SLVDA3.3 SLVE2.8 & SLVE3.3 SLVG2.8 & SLVG3.3

supressors

Contextual Info: Silicon Avalanche Diodes 1500W Axial Leaded Transient Voltage Supressors RoHS LCE Series FEATURES • RoHS compliant • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000µs

1.5KE Series

Abstract: 22 axial pf LCE10A LCE11A LCE12A
Contextual Info: Silicon Avalanche Diodes 1500W Axial Leaded Transient Voltage Supressors RoHS LCE Series FEATURES 6 • RoHs compliant SILICON DIODE ARRAYS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • 1500W Peak Pulse Power capability with a 10/1000µs

avr 551

Abstract: diode BBC
Contextual Info: 1N6461 QPL !500 Watt Axial Leaded TVS TEL: 805-498-2111 PEAK PULSE POWER vs. PULSE TIME T h ai 1N6468 FAX: 805-498-3804 10x1000ns IMPULSE WAVEFORM STEADY STATE DERATING CHARACTERISTICS FOR FREE AIR MOUNTING IÆ 20 « m to 100 IX MO 1Í0 180 MECHANICAL OUTLINE

Contextual Info: MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal

as2350

Abstract: FPX86Y0684J THYRISTOR GTO Gate Turn Off Thyristor GTO IEC 68 FPX66P0504J
Contextual Info: I S S ^ ^ Jä W ; .V.W.V.VV.Ä .•.V.’.V > v^v p :;| , * -v -\ • x s*ss . •■■V <X "S \'•v. ss^íi^ísl^íís:^. S «*. %c» S «■ %< '> Ä 5 ä v.v.v.v.^ ^ v . » s. ¡¡ÿÿîj.x.x.g:««* Tfei ,¡!v! > * w! ' ^ Mv ' t . X .

GTO thyristor Application notes

Abstract: Thomson-CSF capacitors FPX86Y1254J GTO thyristor Thomson-CSF THYRISTOR 100 amp 1000 volt GTO Thomson-CSF passive components FPX86Y0505J Thomson-CSF ceramic capacitor FPX86Y0275J
Contextual Info: FPX RANGE Capacitor for Power Electronics Preliminary data sheet Preliminary data FPX Applications Protection of thyristors . Protection of gate turn off thyristor GTO . Clamping (Secondary snubber) . Technology Metallized polypropylene dielectric capacitor with controlled self healing .

c4v3 zener

Abstract: c4v3 zener diode
Contextual Info: Silicon zener diodes. 1.3 Watts. The plastic material carries U/L recognition 94V-0. BZX85/SZ25 Sene«. 1 3 Watte. Case : DO-4 J/SMA Outline: 2/7 Nominal Zener Voltage TYPE Axial Lead BZX85 C2V7 BZX85 C3V0 BZX85 C3V3 BZX85 C3V6 BZX85 C3V9 BZX85 C4V3 BZX85 C4V7

PHOTO TRANSISTOR 940nm to-18

Abstract: cnd0214a PNA1801LS-ND LN58-ND hall effect position sensor 503 PNZ109L-ND PNZ14700R LN175PA-ND PNZ331CL LNA2W01L-ND
Contextual Info: Hall Effect Sensor ICs Panasonic’s Hall IC is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier,

62320 rectifier

Abstract: e62320
Contextual Info: I Bulletin 12715 rev. E 0 8 /97 International IQR Rectifier m b & jb series SINGLE PHASE BRIDGE Power Modules 10 A 25 A 35 A Features • Universal, 3 way terminals: push-on, wrap around or solder ■ High thermal conductivity package, electrically insulated case

n4007 diode

Abstract: DIODE n4007 Diode rectifier N4007 n4007 1N4001 SMT 1210 capacitors nacew 10megohms
Contextual Info: Table of Contents and Selection Chart ALUMINUM AND TANTALUM ELECTROLYTIC CAPACITORS LEADED TYPES AXIAL SUB-MINIATURE TYPES RADIAL LOW IMPEDANCE HIGH RELIABILITY TYPES RADIAL LOW LEAKAGE TYPES RADIAL SUPER-MINIATURE RADIAL STANDARD TYPES Type Series ApplicatiorVFeature

E 62320

Abstract: 100JB-L IRF 725 100JB 26MB-A 36MB-A 250JB-L
Contextual Info: Bulletin I2715 rev. E 08/97 MB & JB SERIES SINGLE PHASE BRIDGE Power Modules Features 10 A 25 A 35 A Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio

HT 1200-4

Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Contextual Info: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional

P channel 600v 30a IGBT

Abstract: step recovery diode 10a ultra fast diode EPE99 30A ultra fast diode 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A fast recovery diode 600v 5A 30A, 600v DIODE Switching Characteristics of Fast Recovery Diodes
Contextual Info: C-Class Ultra Fast Recovery Diodes for High Speed Switching Applications M.T. Rahimo, S. R. Jones Power Division, Semelab plc., Coventry Road, Lutterworth, Leicestershire, LE17 4JB, United Kingdom. Tel + 44 1455 552505, Fax + 44 1455 552612, E-mail mrahimo@semelab.co.uk

S3A1

Abstract: 1N3492
Contextual Info: SEMICONDUCTOR PRODUCTS CATALOG SWEETWATER AVENUE • P. O. BOX 328 • BEDFORD • MASSACHUSETTS • AREA CODE 617 275-8542 T o v i i i h a n d C o m liC io n ^ o f B a le T e rm s o f P a y m e n t Domestic — net 30 days if credit has been arranged. Where credit is not established, payment must be re­

1N6621 JANTXV

Abstract: IN6620 1N6620 1N6621 1N6622 1N6623 1N6624 1N6625 IN662 DIODE MARKING EJL
Contextual Info: 1 N 6 6 2 0 th ru 1IU6625 MicrosemiCorp. f l'h a diode experts SANTA ANA, CA SCOTTSDALE, A Z For m ore inform ation cali: ULTRA FAST RECTIFIERS 602 941-6300 .030 ± .002 DIA. (.78) Features 1.0 MIN. (25.4) • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS

Semitrans M SKD 100 GAL

Abstract: diode D7 Semitrans M SKD 220 INVERTER ic 747 application note inverter vac pwm igbt IGBT inverter calculation semikron semitrans
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes 9) IF IFM= – ICM IFSM I2t Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT/D1/D8,Tcase=25°C AC, 1 min. DIN 40 040

skm 50 gd 123 d

Abstract: SKM 25 GD 123dl
Contextual Info: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 40 / 30 70 / 50 ± 20 220 – 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W °C