80SQ Search Results

schottky diodes 16A

Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460
Contextual Info: Bulletin PD-2.047 rev. E 12/01 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units IF AV Rectangular 8 A 35 to 45 V IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C 0.44 V TJ range

80SQ05

Contextual Info: 80SQ05 Schottky-Barrier-Gleichrichter Schottky Barrier Rectifiers Version 2004-08-31 Nominal current Nennstrom Ø 5.2 8A ±0.2 ±0.2 Type 50 V Plastic case Kunststoffgehäuse 9.2 62.5 ±0.5 Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-27

40HF

Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

ir 80sQ045

Abstract: 40HF 80SQ 80SQ030 80SQ035 80SQ040 80SQ045
Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

80SQ045

Abstract: DO-204AR Package 40HFL40S02 80SQ 80SQ030 80SQ035 80SQ040 IRFP460
Contextual Info: 80SQ. Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: PD-2.047C International S Rectifier s o s q . s e r i e s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics Characteristics 80SQ. Units ' f AV Rectan9ular waveform 8 A 35 to 45 V Irsm @tp-5(jssine 2400 A VF 0.44 V -55 to 175

Contextual Info: 80SQ05 80SQ05 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-10-28 Ø 5.2 Nominal Current Nennstrom ±0.2 8A ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert

Contextual Info: 80SQ045 SCHOTTKY BARRIER RECTIFIER DIODE PRV : 45 Volts IO : 8.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop 1.00 25.4 MIN.

ir 80sQ045

Abstract: VS-80SQ045 80sq040 80SQ045 80SQ03 vishay Axial DO-204AR vs80sq040 VS-80S ir 80sq040 DO-204AR Package
Contextual Info: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

40HFL40S02

Abstract: 80SQ 80SQ030 80SQ035 80SQ040 80SQ045 IRFP460
Contextual Info: 80SQ. Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

40HFL40S02

Abstract: 80SQ 80SQ035 80SQ040 80SQ045 IRFP460 D1297
Contextual Info: PD-2.047 rev. D 12/97 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up

Contextual Info: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: INTERNATIONAL RECTIFIER bSE D • i»fl5S452 OGlTllfl MIT ■ INR PD-2.047C bitemational S Rectifier 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units lF AV Rectangular waveform 8

80SQ05

Contextual Info: 80SQ05 80SQ05 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2007-11-06 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 5.4 x 7.5 [mm] ~ DO-27 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0

Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,

Contextual Info: 80SQ035 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)92Ô V(RRM)(V) Rep.Pk.Rev. Voltage35 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage710m @I(FM) (A) (Test Condition)16

vishay Axial DO-204AR

Contextual Info: 80SQ. Series Vishay High Power Products Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Cathode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: VS-80SQ. Series, VS-80SQ.-M3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 8 A FEATURES • 175 °C TJ operation • Low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

ir 80sq040

Contextual Info: Bulletin PD-2.047 rev. G 06/05 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 / 45 V waveform VRRM range IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C

80SQ045N

Abstract: 80SQ045NRL MBR845
Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,

Contextual Info: • 46 55 4 5 2 DD12442 T24 ■ INR PD-2.047C INTERNATIONAL RECTIFIER International Rectifier sosq . s e r ie s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The

80SQ045

Abstract: IRFP460 80SQ 80SQ030 80SQ035 80SQ040 ir 80sq040 7380a
Contextual Info: Bulletin PD-2.047 rev. F 05/02 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/ Features Characteristics 80SQ. Units IF AV Rectangular 8 A 30 to 45 V IFSM @ tp = 5 µs sine 2400 A VF @ 8 Apk, TJ = 125°C 0.44 V TJ range

Contextual Info: 80SQ045 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)92Ô V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.380 V(FM) Max.(V) Forward Voltage710m @I(FM) (A) (Test Condition)16

Contextual Info: 80SQ045N Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,