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    96N15 Search Results

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    96N15 Price and Stock

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    Littelfuse Inc IXFH96N15P

    Discmosfetn-Ch Hiperfet-Polar To-247Ad/; |Littelfuse IXFH96N15P
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    Littelfuse Inc IXTQ96N15P

    Disc Mosfet N-Ch Std-Polar To-3P (3)/ Tu; |Littelfuse IXTQ96N15P
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    Littelfuse Inc IXTT96N15P

    Disc Mosfet N-Ch Std-Polar To-268Aa/ Tub; |Littelfuse IXTT96N15P
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    Flip Electronics IXTT96N15P 3,420
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    IXYS Corporation IXFH96N15P

    MOSFETs 96 Amps 150V 0.024 Rds
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    TTI IXFH96N15P Tube 300
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    TME IXFH96N15P 4 1
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    IXYS Corporation IXTQ96N15P

    MOSFETs 96 Amps 150V 0.024 Rds
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    TTI IXTQ96N15P Tube 300
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    96N15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    96N15

    Abstract: 96N15P PLUS220SMD
    Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


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    96n15p96n15pso-24796n15+1plus220smd PDF

    96N15P

    Abstract: IXTQ96N15P
    Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


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    96n15pixtq96n15p PDF

    96n15

    Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150


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    96n15p96n15 PDF

    96N15P

    Abstract: TEm 2411
    Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions


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    isoplus220tm96n15p220tme153432+1tem 2411 PDF

    Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFC 96N15P RDS on Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated trr = 150 V = 40 A Ω = 26 mΩ < 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


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    96n15pisoplus220 PDF

    96N15P

    Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 150


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    96n15p PDF

    96N15P

    Abstract: PLUS220SMD
    Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFH 96N15P IXFV 96N15P IXFV 96N15PS = 150 V = 96 A Ω = 24 mΩ < 200 ns RDS on trr N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    96n15p96n15psplus220smd PDF

    Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions


    Original
    isoplus220tm96n15p220tme153432 PDF

    Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


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    96n15p96n15pso-247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


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    110n055p-5s75n10p-5s110n10p-6s140n10p-7s+15170n10p-8s200n10p-8862n15p-5s96n15p-6s120n15p-7s150n15p-8sdiode 13341334 diode96n2036n30p equivalent88n30100n25p36n30ixtp75n10pixtp ixtp ixtp ixtp PDF