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IXYS Corporation IXFH96N15P MOSFETs 96 Amps 150V 0.024 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH96N15P					1 $10.49 10 $7.30 100 $7.30 1000 $5.53 10000 $5.53	Get Quote
TTI	IXFH96N15P	Tube			300	1 - 10 - 100 - 1000 $5.61 10000 $5.61	Buy Now
TME	IXFH96N15P		4		1	1 $5.65 10 $4.49 100 $4.04 1000 $4.04 10000 $4.04	Buy Now
IXYS Corporation IXTT96N15P MOSFETs 96 Amps 150V 0.024 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT96N15P					1 $12.95 10 $9.65 100 $9.65 1000 $7.14 10000 $7.14	Get Quote
TTI	IXTT96N15P	Tube			300	1 - 10 - 100 - 1000 $7.10 10000 $7.10	Buy Now
TME	IXTT96N15P				1	1 $10.07 10 $8.24 100 $6.30 1000 $5.04 10000 $5.04	Get Quote
IXYS Corporation IXTQ96N15P MOSFETs 96 Amps 150V 0.024 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ96N15P					1 - 10 - 100 - 1000 $4.95 10000 $4.95	Get Quote
TTI	IXTQ96N15P	Tube			300	1 - 10 - 100 - 1000 $4.95 10000 $4.95	Buy Now
TME	IXTQ96N15P				300	1 - 10 - 100 - 1000 $4.63 10000 $4.63	Get Quote
Abracon Corporation ASVV-4.096MHZ-N152-T VCXO Oscillators VCXO 7050 6-SMD 4.096MHz 50ppm Stability 150ppmppm Pullability 0 C - 70 C CMOS 3.3V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ASVV-4.096MHZ-N152-T					1 - 10 - 100 - 1000 $4.34 10000 $4.34	Get Quote
Littelfuse Inc IXFH96N15P Discmosfetn-Ch Hiperfet-Polar To-247Ad/; \|Littelfuse IXFH96N15P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	IXFH96N15P	Bulk			300	1 - 10 - 100 - 1000 $5.21 10000 $4.89	Buy Now
	IXFH96N15P	Bulk			1	1 $7.75 10 $7.75 100 $7.75 1000 $7.75 10000 $7.75	Buy Now
RS	IXFH96N15P	Bulk		8 Weeks	30	1 - 10 - 100 $7.46 1000 $7.46 10000 $7.46	Get Quote

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96N15 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
96N15 Abstract: 96N15P PLUS220SMD Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings	Original	96n15p 96n15ps o-247 96n15 +1plus220smd	PDF
96N15P Abstract: IXTQ96N15P Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A ≤ 24 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150	Original	96n15p ixtq96n15p	PDF
96n15 Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω ≤ 24 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 150 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 150	Original	96n15p 96n15	PDF
96N15P Abstract: TEm 2411 Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions	Original	isoplus220tm 96n15p 220tm e153432 +1tem 2411	PDF
Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFC 96N15P RDS on Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated trr = 150 V = 40 A Ω = 26 mΩ < 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	96n15p isoplus220	PDF
96N15P Contextual Info: IXTQ 96N15P IXTT 96N15P PolarHTTM Power MOSFET VDSS ID25 = 150 V = 96 A Ω = 24 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 150	Original	96n15p	PDF
96N15P Abstract: PLUS220SMD Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFH 96N15P IXFV 96N15P IXFV 96N15PS = 150 V = 96 A Ω = 24 mΩ < 200 ns RDS on trr N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	96n15p 96n15ps plus220smd	PDF
Contextual Info: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS = 150 V ID25 = 42 A Ω RDS on = 26 mΩ < 200 ns trr IXFC 96N15P (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol Test Conditions	Original	isoplus220tm 96n15p 220tm e153432	PDF
Contextual Info: PolarHTTM HiPerFET Power MOSFET VDSS = 150 V ID25 = 96 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFH 96N15P IXFV 96N15P IXFV 96N15PS N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings	Original	96n15p 96n15ps o-247	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	o-220 isoplus220tm o-247 isoplus247tm +15o-264 isoplus264tm plus220 plus220smd o-252 stw20n60 2n60p ixfb100n50 ixfb100n50p stw20n60fd ixfb100n50p to-264 ixys ixfn100n50p ixfn48n60p ixfh30n60p ixfn100n50p	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110n055p-5s 75n10p-5s 110n10p-6s 140n10p-7s +15170n10p-8s 200n10p-88 62n15p-5s 96n15p-6s 120n15p-7s 150n15p-8s diode 1334 1334 diode 96n20 36n30p equivalent 88n30 100n25p 36n30 ixtp75n10p ixtp ixtp ixtp ixtp	PDF

96N15 Search Results

96N15 Price and Stock

IXYS Corporation IXFH96N15P

IXYS Corporation IXTT96N15P

IXYS Corporation IXTQ96N15P

Abracon Corporation ASVV-4.096MHZ-N152-T

Littelfuse Inc IXFH96N15P

96N15 Datasheets Context Search

96N15

96N15P

96n15

96N15P

96N15P

96N15P

IXTD08N100P-1A

7N60B equivalent

STW20N60

DIODE 1334