960V Search Results

Contextual Info: Switching Power Supply Type SPD 960W 3 phases DIN rail mounting • • • • • • • • • Universal AC 3 phases input full range Can also be used as single phase 960VAC Installation on DIN rail 7.5 or 15mm PFC as standard High efficiency up to 93%

7105

Abstract: IRG4PH50K
Contextual Info: PD- 91576A IRG4PH50K AC www.irf.com 1 10/26/09 IRG4PH50K 2 www.irf.com IRG4PH50K www.irf.com 3 IRG4PH50K 4 www.irf.com IRG4PH50K www.irf.com 5 IRG4PH50K D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X IC @25°C 50V 6000µF 100V Fig. 13a. Clamped Inductive Load Test Circuit

Contextual Info: PD- 96063A IRG4PH50KPbF • Lead-Free AC www.irf.com 1 10/26/09 IRG4PH50KPbF 2 www.irf.com IRG4PH50KPbF www.irf.com 3 IRG4PH50KPbF 4 www.irf.com IRG4PH50KPbF www.irf.com 5 IRG4PH50KPbF D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X IC @25°C 50V 6000µF 100V Fig. 13a. Clamped Inductive Load Test Circuit

Contextual Info: APTM120A20DG Phase leg with Series diodes MOSFET Power Module VBUS G1 S1 G2 OUT 0/VBUS S2 VDSS = 1200V RDSon = 200m typ @ Tj = 25°C ID = 50A @ Tc = 25°C Application • Zero Current Switching resonant mode Features  Power MOS 7 MOSFETs - Low RDSon

Contextual Info: APTM120U10SAG Single switch Series & parallel diodes MOSFET Power Module SK CR1 D VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

igbt induction cooker

Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B
Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM

APTGF25H120T1G

Abstract: APT0502 APT0406
Contextual Info: APTGF25H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 Q2 1 Q4 CR2 CR4 9 7 8 11 10 NTC 12 VCES = 1200V IC = 25A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

APT0406

Abstract: APT0502
Contextual Info: APTGF15H120T1G Full - Bridge NPT IGBT Power Module 3 4 Q3 Q1 CR1 CR3 2 5 6 1 Q4 Q2 CR2 CR4 7 9 8 11 10 NTC 12 VCES = 1200V IC = 15A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control

UPS SIEMENS

Abstract: 35n140a
Contextual Info: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat 1400 V 70 A 4V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1400 V VGES Continuous ±20 V VGEM Transient

IXGQ28N120B

Abstract: 28N120 induction cooker application notes IXGQ28N120BD1
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous

APT12031JLL

Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
Contextual Info: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

APT10035LLL

Abstract: APT100GT120JRDL
Contextual Info: 1200V APT100GT120JRDL G *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT E E The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.

APT17F80B

Abstract: APT17F80S MIC4452
Contextual Info: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

IGBT microsemi

Abstract: APT0406 APT0502
Contextual Info: APTGF50A120T1G Phase leg NPT IGBT Power Module 5 6 Q1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 11 CR1 7 8 3 4 Q2 Features • Non Punch Through NPT Fast IGBT - Low voltage drop

APTM120UM70DAG

Abstract: APT0502 APT0601 rg08
Contextual Info: APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70mΩ typ @ Tj = 25°C ID = 171A @ Tc = 25°C Application • Zero Current Switching resonant mode SK D DK DK S Benefits • Outstanding performance at high frequency operation

APT7M120B

Abstract: APT7M120S MIC4452
Contextual Info: APT7M120B APT7M120S 1200V, 8A, 2.1Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT0406

Abstract: APT0502 APTGF25H120T3G ice power 1000a
Contextual Info: APTGF25H120T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Features • Non Punch Through NPT Fast IGBT

APT1201R2BFLL

Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

APT0406

Abstract: APT0502
Contextual Info: APTGF25X120T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 1200V IC = 25A @ Tc = 80°C Application • Motor control 31 16 23 19 29 14 25 20 30 18 11 10 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC

APT12031JFLL

Abstract: APT12031JLL
Contextual Info: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

20n120

Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

INFORMATION OF IC 7424

Abstract: APT75GP120B2
Contextual Info: APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

Contextual Info: APT50GT120B2R G APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.

APT4M120K

Abstract: MIC4452
Contextual Info: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure