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Panasonic Electronic Components EXB-28N120JX 0804 Resistor Array Convex Type / 7 Inch Reel 12 Ohm 5% Halogen Free Type
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	EXB-28N120JX					1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
Avnet Americas	EXB-28N120JX	Tape & Reel		18 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now
SiTime Corporation SIT1602BC-32-28N-12.000000T Silicon Oscillator 12MHz 2.8V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-32-28N-12.000000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT1602BC-32-28N-12.000000T	Tape & Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.81	Buy Now
SiTime Corporation SIT1602BC-22-28N-12.000000G - Tape and Reel (Alt: SIT1602BC-22-28N-12.000000G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT1602BC-22-28N-12.000000G	Tape & Reel		18 Weeks	250	1 - 10 - 100 - 1000 $0.96 10000 $0.90	Buy Now
SiTime Corporation SIT1602BC-23-28N-12.000000D Silicon Oscillator 12MHz 2.8V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-23-28N-12.000000D)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT1602BC-23-28N-12.000000D	Tape & Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.67	Buy Now
SiTime Corporation SIT1602BC-81-28N-12.000000Y Silicon Oscillator 12MHz 2.8V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-81-28N-12.000000Y)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT1602BC-81-28N-12.000000Y	Tape & Reel		18 Weeks	1,000	1 - 10 - 100 - 1000 $0.83 10000 $0.78	Buy Now

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28N120 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
igbt induction cooker Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28n120b ic110 o-268 o-247 +7728b1 123b1 065b1 igbt induction cooker induction cooker application notes siemens igbt ixgh 28n120b	PDF
IXGQ28N120B Abstract: 28N120 induction cooker application notes IXGQ28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	28n120b 28n120bd1 ic110 065b1 +6728b1 123b1 ixgq28n120b 28n120 induction cooker application notes ixgq28n120bd1	PDF
igbt induction cooker Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28n120bd1 ic110 o-268 0-12a/dsec +20-12a igbt induction cooker	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28n120bd1 ic110 o-247ad o-268 +3o-247 405b2 ixgh 28n120bd1	PDF
28N120 Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28n120b ic110 o-268 o-247 +128n120	PDF
Contextual Info: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	28n120b ic110 o-268 o-247	PDF
IXGH 28N120BD1 Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	28n120bd1 ic110 o-247ad o-268 +3o-247 fea140 ixgh 28n120bd1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	28n120b 28n120bd1 ic110 065b1 +2728b1 123b1	PDF
Contextual Info: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28n120bd1 ic110 o-247ad o-268 +1o-247	PDF
28N120 Abstract: igbt induction cooker Siemens induction cooker IXGP28N120B igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28N12 C27056 Contextual Info: High Voltage IGBT IXGP 28N120B VCES = 1200 V = 50 A IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	28n120b ic110 o-220 28n120 +9igbt induction cooker siemens induction cooker ixgp28n120b igbt for induction heating ic induction cooker induction cooker application notes induction heating ic 28n12 c27056	PDF
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Contextual Info: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	28n120bd1 ixgh 28n120bd1 igbt induction cooker 28n120	PDF
Contextual Info: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	28n120b ic110 o-268 o-247 +3728b1 123b1 065b1	PDF
28N120B Abstract: RG201 Contextual Info: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	28n120b o-268 o-247 728b1 +3123b1 065b1 rg201	PDF
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	7n60b-2x 7n60c-2x 16n60b2-3x 16n60c2-3x +1230n60b2-4x 30n60c2-4x 40n60b2-5y 40n60c2-5y 60n60b2-7y 60n60c2-7y 7n60b equivalent 10n60b ixgd 28n12 20n120 16n60c2	PDF