9596 Search Results

Contextual Info: Power Converters & EMI Filters Advancing the Power Curve Products for the Global Industrial Market Environment Made in USA SynQor Headquarters 155 Swanson Road Boxborough, MA 01719 Toll Free USA : 888-567-9596 Phone: 978-849-0600 Fax: 978-849-0602 E-mail: power@synqor.com

Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

irf9321

Abstract: IRF9321PBF IRF9321TRPBF
Contextual Info: PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 RDS on max V 7.2 mΩ 11.2 mΩ Qg (typical) 34 nC ID -15 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) 6   ' 6   ' 6   ' *   ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

auirf1010ez

Abstract: auf1010ezs 51a marking AUIRF1010EZS AN-994 AUIRF1010EZL MARKING 51A
Contextual Info: PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features O O O O O O O Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

IRG4PC50

Abstract: PD-95966 MARKING CODE 41A
Contextual Info: PD-95966 IRG4PC50S-PPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: Philips Semiconducfors-Slgnetlcs _ _ _ _ FAST 74F51 G ot Document No. 853-0054 ECN No. 95962 Date of issue March 3,1989 Status Product Sped ficaSion Dual 2-Wide 2-lnput, 2-Wide 3-lnput AND-OR-Invert G ate FAST Products TYPICAL SUPPLY CURRENT TOTAL

Contextual Info: PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features n n n n n n n HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

diode BY 028

Abstract: HFA08PB60 IRFP250
Contextual Info: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V

Contextual Info: PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 RDS on max V 7.2 mΩ 11.2 mΩ Qg (typical) 34 nC ID -15 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) 6   ' 6   ' 6   ' *   ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application

Contextual Info: AC Input: DC Output: Power: Grade: Top Right Bottom Front Back Product # AQ0300IUxx Series Phone 1-888-567-9596 www.synqor.com Doc.# 005-005051 Rev. B 07/22/09 Page 5

IRGP50B60PDPBF

Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V

4 mm 16 lead PQFN Package

Contextual Info: PD -95961A IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS on max 4.1 mΩ Qg (typical) 69 nC RG (typical) 1.2 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRG4BC20FD-SPbF

Abstract: AN-994 IRF530S
Contextual Info: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRFH5006

Abstract: IRFH5006TR2PBF AN-1154 IRFH5006PbF
Contextual Info: PD -95961 IRFH5006PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID 60 V 4.1 mΩ 67 1.2 nC 100 (@Tc(Bottom) = 25°C) Ω h A PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: Philips Somlconductors-SlgneHcs Document No. 853-0054 ECNNo. 95962 Date of Issue March 3, 1989 Status Product Specification , _ _ , FAST 74F51 G ate Dual 2-Wide 2-Input, 2-Wide 3-Input AND-OR-lnvert Gate FAST Products TYPICAL PROPAGATION DELAY TYPE 74F51 TYPICAL SUPPLY CURRENT

irrm1

Abstract: HFA*B60
Contextual Info: PD-95969 HFA08PB60PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count VR = 600V

AN-994

Abstract: IRF530S 2740 D
Contextual Info: PD -95965 IRG4BC20FD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

035H

Abstract: 30ETH06 IRFP250 IRFPE30 Ice-100
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

"Q-bit Corporation"

Abstract: Q-Bit
Contextual Info: 3-BIT CORP MfciE D 744^331 00004D1 5 •ÖBC 'T-nti-ocf‘ 0 HYBRID RF AMPLIFIER High Gain: Greater Than 26 dB +5V DC Input Voltage Gain Flatness Less Than 0.5 dB p-p VSWR Less Than 1.5:1 Over Entire Temperature Range QBH-801 Power Feedback Technology in a Hybrid Amplifier

ES50N18LA2

Abstract: YTX14-BS YTZ10S MOTORCYCLE engine specifications yamaha mt-03 ES14AA2 PT12B YTZ14s GL1800 EXIDE GEL G 210
Contextual Info: 145372_CalCoastAdv 2/23/11 4:07 PM Page 1 145372_CalCoastAdv 2/23/11 4:07 PM Page 2 Sealed Maintenance Free Battery Features Sealed Post Prevents acid leakage, reduces corrosion, and extends battery life safety valve flame/arrestor relieves excess pressure