IRRM1 Search Results

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
Contextual Info: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A

SIDC56D120E

Abstract: 2000A power diode
Contextual Info: Preliminary SIDC56D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC56D120E 1200V ICn 75A A This chip is used for:

dm 465

Abstract: HFA135NH40 IRFP250 NC4000
Contextual Info: PD -2.465 rev. B 03/99 HFA135NH40 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 400V VF typ. ƒ = 1V IF(AV) = 135A

HFA08PB120

Abstract: IRFP250
Contextual Info: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4

HFA140NJ60D

Abstract: IRFP250
Contextual Info: PD -2.514 rev. A 02/99 HFA140NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC VR = 600V VF typ. ƒ = 1.2V IF(AV) = 140A Qrr (typ.) = 340nC

HFA06TB120

Abstract: IRFP250 transistor D207
Contextual Info: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC

irm 1838

Abstract: HFA30PB120 IR 1838 OZ 9936 transistor D207 IRFP250
Contextual Info: Preliminary Data Sheet PD-2.604 rev. A 12/00 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions VF typ. * = 2.4V

4344

Abstract: SIDC06D60F
Contextual Info: Preliminary SIDC06D60F Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC06D60F 600V ICn 15A A This chip is used for:

a2206

Abstract: SIDC30D120E
Contextual Info: Preliminary SIDC30D120E Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VCE SIDC30D120E 1200V ICn 35A A This chip is used for:

AAAA series SMD transistor

Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: PD-96037 HEXFRED HFA08TB60SPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD - 95682A HFA16PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits VR = 600V 2 VF = 1.7V Qrr * = 65nC 1 di rec M/dt * = 240A/µs

PD245

Contextual Info: PD -2.453 rev. B 02/99 HFA240NJ40C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 1 LUG TERMINAL ANODE 2 BASE COMMON CATHODE V R = 400V VF typ. ƒ = 1V

Contextual Info: HFA30TA60CS Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: PD - 95680A HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A

Contextual Info: VS-HFA25TB60SHM3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Specified at operating conditions • Meets MSL level 1, per LF maximum peak of 260 °C

HFA16TA60C

Abstract: HFA30TA60C
Contextual Info: PD-95689 HFA30TA60CPbF HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI

Contextual Info: VS-HFA30PB120PbF, VS-HFA30PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Designed and JEDEC-JESD47 Base common cathode to BENEFITS •

Contextual Info: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI

Contextual Info: HFA25TB60S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • Base cathode 2 BENEFITS • • • • • 3 Anode 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions

Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

Contextual Info: VS-HFA08TB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 2 whisker test 2 • Material categorization:

Contextual Info: HFA15TB60SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES • • • • • • • Base cathode 1 Available RoHS* COMPLIANT BENEFITS 2 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions

Contextual Info: Bulletin PD -2.382 rev. D 12/00 HFA06TB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • BASE CATHODE Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Benefits 4 IF AV = 6.0A Qrr (typ.)= 116nC