HFA08TB120S Search Results

AAAA series SMD transistor

Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

Contextual Info: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

HFA08TB120S

Contextual Info: HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC

HFA08TB120S

Contextual Info: HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free Designed and qualified for Q101 level

DI 380 Transistor

Abstract: HFA08TB120S IRFP250 140N
Contextual Info: PD - HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • • Base cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free Designed and qualified for Q101 level

Contextual Info: HFA08TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

31lF

Contextual Info: International IOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.603 05/97 HFA08TB120S Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions

Contextual Info: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

Contextual Info: VS-HFA08TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020,  LF maximum peak of 260 °C

MAR 618 transistor

Abstract: transistor smd code marking tm transistor mar 618 HFA08TB120S SMD-220
Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: VS-HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

transistor 200A 24V

Contextual Info: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A

B120S

Abstract: marking dt2 marking code dt2 transistor HFA08TB120S low leakage fast epitaxial diode dt2 marking code
Contextual Info: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A

Contextual Info: VS-HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

"diode 8 A"

Abstract: HFA08TB120S
Contextual Info: HFA08TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm
Contextual Info: Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

VS-HFA08TB120SPBF

Abstract: HFA08TB120S IRFP250 9404606
Contextual Info: VS-HFA08TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum

Contextual Info: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A

smd marking dt2

Abstract: HFA08TB120S SMD-220 b1103 SMD Transistor Marking Code 335
Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: HFA08TB120S Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 N/C Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .