140N Search Results

2SK140

Abstract: 2SK1406 t1624
Contextual Info: P o w e r F-MOS FET 2SK1406 2S K 1406 Silicon N-Channel Power F-MOS FET P ackage Dim ensions • Features • • • • Low RRD o„ = 0.32il (typ.) High speed switching tf= 140ns (typ.) Secondary breakdown free High voltage power Unit: mm 5.2max. 15.5max.

IXFK240N15T2

Abstract: IXFX240N15T2 PLUS247
Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

Mosfet 75V 120A

Abstract: Power Mosfet 75V 120A IXFN240N15T2
Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

ixfn420n10t

Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16
Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

IXFR140N30

Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IOL15

Contextual Info: CD4086BMS CD CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Decem ber 1992 Pinout Features CD4086BMS TOP VIEW • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns OVP. at10V • High Voltage Type 20V Rating) • INHIBIT and ENABLE Inputs *E B& j > in h +EHZECE+ r r

AN541

Abstract: harris AN541
Contextual Info: HA-2540 ÎH HARRIS S E M I C O N D U C T O R 400MHz, Fast Settling Operational Amplifier November 1996 Description Features • Very High Slew R a te . 400V/|xs • Fast Settling T im e . 140ns

HCF4086B

Abstract: HCF4086BEY HCF4086BM1 HCF4086M013TR
Contextual Info: HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns Typ. at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS

Contextual Info: Power F-MOS FET 2SK1406 2SK1406 Silicon N-Channel Power F-MOS FET Package Dim ensions • Features • Low R rd „„ =0 .3 2 n (typ.) Unit: mm • High speed switching tf= 140ns (typ.) 5.2max. 15.5max. 6.9mm. • Secondary breakdown free 3.2- • High voltage power

Contextual Info: LT1215CN8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 600n Unity Gain BW (Hz)15M V(io) Max. (V)800u I(io) Max. (A)140n Com Mode Inp Range (VICR) Input Resistance Typ. (Ohms) Temp Coef. of VIO5.0u P(D) Max. (W)

Contextual Info: OP221GP Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 140n Unity Gain BW (Hz)600k V(io) Max. (V)700u I(io) Max. (A)10n Com Mode Inp Range (VICR)13.2ñ Input Resistance Typ. (Ohms) Temp Coef. of VIO3.0u P(D) Max. (W)500m

7032

Abstract: PA1894.271NL PA1894NL PA2080NL 221nl
Contextual Info: THT POWER INDUCTORS Power Beads - PA2080NL and PA1894NL Series Desktop/Server Vcore Inductors DCR Tolerance: ±4% Current Rating: Over 80Apk Inductance Range: 140nH to 330nH Height: 8.9mm Max PA2080NL , 10.0mm Max (PA1894NL) Footprint: 10.5mm x 7.5mm Max (PA2080NL)

byp303

Abstract: C67047-A2253-A2 BYP 303
Contextual Info: BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type VRRM IFRMS trr Package Ordering Code BYP 303 1200V 65A 140ns TO-218 AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current IFAV TC = 90 °C, D = 0.5

CD4076B

Abstract: CD4086BMS IOH15
Contextual Info: CD4086BMS CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate December 1992 Features Pinout • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns Typ. at 10V CD4086BMS TOP VIEW • High Voltage Type (20V Rating) A 1 • INHIBIT and ENABLE Inputs B 2 J = INH + ENABLE +

Contextual Info: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C

2SK2045

Contextual Info: Ordering number:ENN4287A N-Channel Silicon MOSFET 2SK2045 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · High-speed diode built in trr=140ns . · Micaless package facilitating easy mounting.

Contextual Info: PolarHTTMHiPerFET Power MOSFET VDSS = 200 V ID25 = 140 A Ω RDS on ≤ 18 mΩ ≤ 200 ns trr IXFK 140N20P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFN240N15T2 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions

jeida dram 88 pin

Abstract: STI321000C2
Contextual Info: STI321000C2-xxV,-xxSV 88-PIN CARDS 1M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: I ^RAC ^CAC *RC STI3210O0C2-60 60ns 15ns 120ns STI321000CZ-70 70ns 20ns 140ns STI3210OOC2-8O 80ns 20ns 160ns The Simple Technology STI321000C2 is a 1M bil x3 2 Dynamic

Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 70 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings

Contextual Info: Ordering number: EN4287A 2SK2045 N0.4287A N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications F eatures • Low ON resistance. • Ultrahigh-speed switching. • High-speed diode built in tn- = 140ns . • Micaless package facilitating easy mounting.

IRS25411

Abstract: SO8 NARROW 156V IRS2540 IRS254 irs25411pbf IRS25401
Contextual Info: LIGHTING High-Voltage Buck Control ICs for Constant LED Current Regulation THE POWER MANAGEMENT LEADER Features: • Micropower Startup less than 500µA • ± 2% voltage reference • 140ns deadtime • PWM Dimmable • Free running frequency • 200V (IRS25401) and 600V (IRS25411)

Contextual Info: OP221CZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 140n Unity Gain BW (Hz)600k V(io) Max. (V)700u I(io) Max. (A)10.0n Com Mode Inp Range (VICR)13.2ñ Input Resistance Typ. (Ohms) Temp Coef. of VIO3.0u P(D) Max. (W)500m

Contextual Info: OP221GS Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 140n Unity Gain BW (Hz)600k V(io) Max. (V)700u I(io) Max. (A)10n Com Mode Inp Range (VICR)28 Input Resistance Typ. (Ohms) Temp Coef. of VIO3.0u P(D) Max. (W)500m