AT10V Search Results

IOL15

Contextual Info: CD4086BMS CD CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Decem ber 1992 Pinout Features CD4086BMS TOP VIEW • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns OVP. at10V • High Voltage Type 20V Rating) • INHIBIT and ENABLE Inputs *E B& j > in h +EHZECE+ r r

DL10

Contextual Info: CONTINUOUS OPERATING RANGE ADJUSTABLE POWER SUPPLY mod. AT10VD AT10VD Performance curve Item: AT10VD Input: 230Vac±10 50Hz V out: 1÷15Vdc adjustable I out: 6A @ 12Vdc I limit: 10A 7,00 Operating test executed into climatic room: T amb: 25±2°C Relative humidity: 60±5%

1N295

Abstract: 1N294 1N90 ln297 1N135 1n69 1N75 1N128 in67a 1N67
Contextual Info: CRIMSON SEM IC ONDUC TO R INC Ti 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 0 0 3 5 0 D DE | S S m D ^ b T'Ot'Ol GERMANIUM DIODE TYPE PE A K REVERSE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW ARD CURRENT A T 1 V O LT

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: RFG60P06E
Contextual Info: interrii RFG60P06E D a ta S h e e t J u ly 1 9 9 9 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated

Contextual Info: RF1K49224 in te ik il Data Sheet A u g u s t 1999 Fite N um ber 4330.1 Features 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Com plem entary LittleFET Power M OSFET • 3.5A, 3 0 V N-Channel 2.5A, 3 0V (P-Channel) The R F1 K 4 9 2 24 complementary power M O S F E T is

IR 35401

Abstract: ci 7490 AL-45203 AL-35610 1N576 1N5767
Contextual Info: 3 0 V o H D Io d M A L-3 5 1 0 0 S E R IE S G I m s E n c a p s u la t e d T u n in g V a r a c lo r D lo d a a A L-38 200 S E R IE S 3 0 V o tt O to d a a A L» 4 5 4 0 0 S E R IE S T h e AL-35100 se rie s o f tuning va ra cto r dio des have been designed fo r tuning G unn

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

gunn diode x band series 45200

Abstract: Al67 Gunn Diode x-band varactor diode 10 GHz gunn diode AL3501 406X1 AL-35A10 Gunn Diode e band AL-62101
Contextual Info: AL-3 5100 S E R IE S 30 V o lt D K x rt* T h e AL-35100 series o f tun in g v a ra cto r diodes have been desig ned fo r tuning G u n n Type No. AL-35136 AL-35137 AL-35138 AL-35130 AL-35140 AL-35141 AL-35142 AL-36143 AL-35144 AL-35145 AL-35146 Total CapsÜtanca

1N135

Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Contextual Info: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M

TIP3iC

Abstract: T1P32 panasonic 154 IR32A TIP31 TIP31B TIP32 TIP32A TIP32B TIP32C
Contextual Info: P AN ASO NIC INDL/ELEK -CIO b*132ä52 G01G427 1 12E D Silicon PNP Power Transistors r-33-n TO-220 Package Absolute Maximum Ratings Ta=25°C TIP32 TIP32A TIP32B TIP32C Unit Collector-Base Voltage -V C B O 40 60 80 100 V Collector-Emitter Voltage -V C E O

fa 5542

Abstract: EIA-RS-449 sipex 485 ec SPS22 rs 303 422
Contextual Info: C in a v u iiJW A SP522/524 Corporation ▼ SIG NAL PR O C E SSIN G E X C EL LE N C E M u lt i- P r o t o c o l S e r ia l T r a n s c e iv e r • SP522 — 2 Drivers and 2 Receivers ■ SP524 — 4 Drivers and 4 Receivers ■ Driver and Receiver Tri-State Control