140NC Search Results

HFA08PB120

Abstract: IRFP250
Contextual Info: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4

AAAA series SMD transistor

Contextual Info: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2

Contextual Info: PD - 95680A HFA08PB120PbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UFP254 Preliminary Power MOSFET 23A, 250V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFP254 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can

HFA08TB120

Abstract: IRFP250
Contextual Info: Bulletin PD -2.383 rev. C 11/00 HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V VF typ. * = 2.4V BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4

MAX15500

Contextual Info: 19-4602; Rev 0; 6/09 Industrial Analog Current/ Voltage-Output Conditioners The MAX15500/MAX15501 analog output conditioners provide a programmable current up to Q24mA, or a voltage up to Q12V proportional to a control voltage signal. The control voltage is typically supplied by an external

MAX5972

Abstract: MAX5972B MAX15000 JESD51-5
Contextual Info: 19-4924; Rev 1; 2/10 TION KIT EVALUA BLE A IL A V A IEEE 802.3af/at-Compliant, Powered Device Interface Controller with Integrated Power MOSFET Features The MAX5972A provides a complete interface for a powered device PD to comply with the IEEE 802.3af/

Contextual Info: International lOR Rectifier PD-2.365A HFA08PB120 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions V F typ. * = 2.4V

Contextual Info: PD -2.365A International IQR Rectifier HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very L ow Q rr Guaranteed Avalanche Specified at Operating Conditions

Contextual Info: 19-5955; Rev 0; 6/11 TION KIT EVALUA BLE IL AVA A 4-Channel, Automotive Class D Audio Amplifier The MAX13301 combines four high-efficiency Class D amplifiers with integrated diagnostic hardware for reliable automotive audio systems, and delivers up to 80W

60N6S2D

Abstract: FGK60N6S2D LD26 TA49346
Contextual Info: FGK60N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGK60N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau

Contextual Info: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )

SKB04N60

Abstract: SKP04N60
Contextual Info: SKP04N60 Preliminary SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

SKB06N60

Abstract: 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60
Contextual Info: SKP06N60 Preliminary SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:

smps inverter

Contextual Info: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 50% lower Eoff compared to previous generation • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution

Contextual Info: EVALUATION KIT AVAILABLE MAX15500/MAX15501 Industrial Analog Current/ Voltage-Output Conditioners General Description The MAX15500/MAX15501 analog output conditioners provide a programmable current up to Q24mA, or a voltage up to Q12V proportional to a control voltage signal.

DI 380 Transistor

Abstract: HFA08TB120S IRFP250 140N
Contextual Info: PD - HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

2383A

Abstract: HFA08TB120 IRFP250
Contextual Info: PD -2.383A HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

MAX5969BETB

Abstract: MAX5969 "powered device"
Contextual Info: 19-5008; Rev 0; 12/09 TION KIT EVALUA BLE AVAILA IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET Features The MAX5969A/MAX5969B provide a complete interface for a powered device PD to comply with the IEEE 802.3af/at standard in a power-over-Ethernet (PoE) system. The MAX5969A/MAX5969B provide the PD with a

HFA08TB120

Contextual Info: Bulletin PD -2.383 rev. B 04/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 1200V VF typ. * = 2.4V Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions

MAX5980

Abstract: MAX5980GTJ
Contextual Info: 19-5568; Rev 1; 09/11 Quad, IEEE 802.3at/af PSE Controller for Power-over-Ethernet Features The MAX5980 is a quad, power-sourcing equipment PSE power controller designed for use in IEEE 802.3at/af-compliant PSE. This device provides powered device (PD) discovery, classification, current limit, and

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BSS127 Power MOSFET 0.021A, 600V SMALL-SIGNAL-TRANSISTOR  DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.

Contextual Info: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4

FGH60N6S2D

Abstract: 60N6S2 FGH40N6S2 FGH60N6S2 LD26
Contextual Info: FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices