90D 22 Search Results

Apacer

Abstract: ata controller ssd block diagram of sata SSD drive APSDM032G15AD-ACM APSDM032G15AN-ACM ap-sdm128
Contextual Info: RoHS Compliant SATA-Disk Module 4 SDM4-M 22P/90D Product Specifications November 30th, 2011 Version 1.1 Apacer Technology Inc. 4th Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889

Contextual Info: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA -CDISCRETE/OPTO} ! 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A TD ]> F | SOTTESO 90D 16014 SEMICONDUCTOR O O lb O m 0 7 ^ 33 .35- TOSHIBA CTR TRANSISTOR MG7 5G2YL1 A TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HI RH POWER SWITCHING APPLICATIONS.

U4985

Contextual Info: For Immediate Assistance, Contact your Local Salesperson 14-Bit 5.12MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: -90d B L Grade • WIDEBAND SAMPLE/HOLD: 60MHz • SAMPLE RATE: DC to 5.12MHz • HIGH SIGNAL/NOISE RATIO: 78dB

SSD20N06-90D

Abstract: MosFET 90D 22
Contextual Info: SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS ON 94 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density

Contextual Info: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

mg15n2

Contextual Info: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm

Contextual Info: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

74641

Abstract: SUP90N06-5M0P
Contextual Info: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification

Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature RoHS • 100 % Rg and UIS Tested COMPLIANT

Contextual Info: DE I TG^TESD 001b:L33 fl | TOSHIBA {DIS C RE TE /O PTO } 9097250 TOSHIBA <DISCRETE/OPTO TO SHIBA 90D 16133 SEMICONDUCTOR ~r-33-‘Z'7 D TOSHIBA GTR MODULE M G 50 H2 YS 1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. riOTOR CONTROL APPLICATIONS.

mg15n2

Contextual Info: ^ shíbT T d i s c r e t e /o p t o > TO 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D 16156 SEMICONDUCTOR D T -3 3 -2 7 TOSHIBA GTR MODULE MG15N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT TENTATIVE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

74641

Abstract: SUP90N06-5M0P
Contextual Info: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

SUM90N10

Abstract: 74643 sum90n10-8m2p
Contextual Info: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Contextual Info: SUP90N10-8m8P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0088 at VGS = 10 V 90d 97 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT

Acumos

Abstract: transistor arrays 5v Transistor AN 7001 - 14 pin 7004 CMOS
Contextual Info: Acunos 0198987 ACUMOS in c to deJ o n a ia ? INC 90D dodooh3 D 00023 3 ^ T[ - *+1 -//• Of * * 7001, 7004, 7005 Acumos, Inc. High Output Drive Digital Gate Arrays M M LIIM IINAKY Features: Package Sizes •Low cost PAL replacements TYPES •100 to 700 gate densities