100AAIS Search Results

IRF1010

Abstract: IRFBC40LC 3S4M
Contextual Info: International i»R Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced C ss. Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated V d ss

F1G21

Abstract: IRF7317
Contextual Info: International IOR Rectifier P D -9.1568 IRF7317 PRELIMINARY HEXFET Power MOSFET • • • • • Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

APT8030JNFR

Contextual Info: A d van ced ro w er Te c h n o l o g y APT8030JNFR ISOTOP® 800V 27A 0.30Q "U L Recognized" File No. E145592 S POWER MOS IV“ AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS M AXIM UM R ATIN G S S ym bol V DSS A ll Ratings: T c = 2 5 °C unless otherwise specified.

Contextual Info: £!| h U U P RURP3040, RURP3050, R URP3060 a r r is S E M I C O N D U C T O R 30A, 400V - 600V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JE D EC TO-22QAC ANODE • +175°C Rated Junction Temperature