8X101 Search Results

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

tic 1060

Contextual Info: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,

5962-06203

Abstract: 5962-07210 "rad" sram
Contextual Info: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)

hamamatsu c1000

Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
Contextual Info: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244

Contextual Info: T1300 Series TCXO 10 to 50 MHz GREENRAY INDUSTRIES, INC. Rev F PRECISION QUARTZ TECHNOLOGY Ultra-Low Acceleration Sensitivity Low Phase Noise SPECIFICATIONS Frequency Output Symmetry Load Temp Stability Freq vs. Supply Freq vs. Load Short Term Aging Input Voltage

A950 O

Abstract: BPX90 F
Contextual Info: SIEMENS BPX 90 BPX 90F DAYLIGHT FILTER Silicon Planar Photodiode BPX 90 FEATURES • Especially suitable for applications - BPX 90:400nm to 1100 nm - BPX90 F: 950 nm • High photosensitivity • DIL plastic package with high packing den­ sity APPLICATIONS

philips ecg master replacement guide

Abstract: ecg semiconductors master replacement guide ECG transistor replacement guide book free philips ecg semiconductors master replacement guide oz 8602 gn AC digital voltmeter using 7107 smd glass zener diode color codes cd 1619 CP fm radio russian transistor cross-reference yd 7377
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

RTV3110

Abstract: 4526a Burle 4526A B12-43 BURLE INDUSTRIES 10-STAGE JEDEC B12-43 burle 4526A photomultiplier JEDEC B12-43 S-20
Contextual Info: Return To Product Page 4526A Photomultiplier 10-Stage Dormer-Window Type Having Multialkali Photocathode Deposited on a Reflective Substrate ! High Cathode Sensitivity Typical : Radiant at 530 nm: 70 x 10-3 A/W Luminous: 315 x 10-6 A/lm ! Quantum Efficiency (Typical):

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

PDB-C607-2

Contextual Info: Solderable Silicon Photodiodes PDB-C607-2 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ± .050 [1.27] 2X 1.25 [31.8] RED 30 AWG PVC WIRE, ANODE 2X .250 [6.35] 2X TINNED BLACK 30 AWG PVC WIRE, CATHODE .021 [0.53] .014 [0.36] CHIP DIMENSIONS INCH [mm]

ECG transistor replacement guide book free

Abstract: philips ecg master replacement guide one chip tv ic 8873 ecg semiconductors master replacement guide philips ecg semiconductors master replacement guide cd 1619 CP fm radio smd transistor 5AW replacement of bel 187 transistor ecg philips semiconductor master book SUBSTITUTE FOR A bel 187 transistor
Contextual Info: Chapter 7 Component Data and References Component Data None of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS x tx c k x c o n R ChipType' cv L . H '9 h For SMD • Chip type, higher capacitance in larger case sizes. • Designed for surface mounting on high density PC board. • Applicable to automatic mounting machine using carrier tape.

CY7B923

Abstract: CY7B933 CY9266-C
Contextual Info: t HOTLink Jitter Characteristics Abstract This application note describes the basics of jitter in transmission systems and, using HOTLink as the example, shows how it can be analyzed and meaĆ sured. Specific characterization data is presented that will allow system integrators to understand the

Contextual Info: SIEMENS KOM 2033 B DAYLIGHT FILTER KOM 2033 BF KOM 2100 B DAYLIGHT FILTER KOM 2100 BF 6-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm KOM 2033 B/BF Frame PC board \ A z£ Chip Coating 1.3 ± .5 5 • p.8 * .2 Schematic A1 o — ° K1 A 2o — |> ^ -o K 2

C1383 transistor

Abstract: C1383 C1921 transistor c1983 transistor C1973 transistor C1983 16 transistor C982 C1393 transistor C943 transistor c1972
Contextual Info: channel photomultipliers CPM Features • Ultra-high anode sensitivity up to 107 A/W • Extremely low dark current, typically 3 pA @ 106 gain • Very low equivalent noise input down to 10-17 W • High stability in dark current (“no bursts”) • High gain exceeding 108

C30807

Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
Contextual Info: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide