8MX32 DRAM SIMM Search Results

HYM532814CM

Abstract: HY5117404C HYM532814C HYM532814CMG
Contextual Info: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HYM532810BM

Abstract: HY5117400B HYM532810B HYM532810BMG
Contextual Info: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HY5117404C

Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
Contextual Info: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HY5117400C

Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
Contextual Info: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HYM532814BM

Abstract: HY5117404B HYM532814B
Contextual Info: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

Contextual Info: »"HYUNDAI > • H YM 5 3281 4B M -S eries 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.1 uF and 0.01 nF

KMM5328004CSW

Abstract: KMM5328004CSWG samsung 64mb dram module 72-pin simm
Contextual Info: DRAM MODULE KMM5328004CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328004CSW/CSWG DRAM MODULE KMM5328004CSW/CSWG

8mx32 simm 72 pin

Abstract: 8Mx32 dram simm 4Mx4 dram simm 328006ES52T16JD simm EDO 72pin
Contextual Info: 8M x 32 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 328006ES52T16JD 72 Pin 8Mx32 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Extended Dataout (EDO) access.

Contextual Info: DRAM MODULE KMM5328000CSW/CSWG 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5328000CSW/CSWG DRAM MODULE KMM5328000CSW/CSWG

328006-S52T16JD

Abstract: 8mx32 simm 72 pin 4Mx4 2 CHIP dram simm FPM DRAM 30-pin SIMM
Contextual Info: 8M x 32 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 328006-S52T16JD 72 Pin 8Mx32 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 8Mx32 bit, 16 chip, 5V, 72 Pin SIMM module consisting of (16) 4Mx4 (SOJ) DRAM. The module is unbuffered and supports Fast Page Mode

Contextual Info: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C

K4E641611C

Contextual Info: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C

Contextual Info: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package G EN ER AL DESCRIPTIO N FEATURES • Part Identification - KMM5328000BK 4096 cycles/64 ms Ref, SOJ, Solder

Contextual Info: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

mega 329

Contextual Info: DRAM MODULE 32 Mega Byte / KMM53281OOAK/AKG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns Dynam ic RAM high density m em ory module. The

8Mx32 dram simm

Contextual Info: DRAM MODULE M53210804BY0/BT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210804BY0/BT0-C Revision History Version 0.0 (Sept., 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

KMM5328100AV

Contextual Info: DRAM MODULE 32 Mega Byte KMM53281OOAV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400mil Package G EN ERA L D ES C R IPTIO N FEATURES The Samsung KMM5328100AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328100AV consists of sixteen

8Mx32 dram simm

Abstract: 8mx32 simm 72 pin
Contextual Info: DRAM MODULE M53230804BY0/BT0-C 4Byte 8Mx32 SIMM PDpin 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230804BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

KM44C4000AK

Abstract: 4Mx4 DRAM
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AK/AKG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5328000AK is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5328000AK consists of sixteen

Contextual Info: KMM5328000BK/BKG KMM53281OOBK/BKG DRAM MODULE KMM5328000BK/BKG & KMM53281 OOBK/BKG Fast Page Mode 8Mx32 DRAM SIMM , 4K & 2K Ref, using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES T h e S a m su n g KM M 53280 1 O O B K is a 8M b it x 32 • P a rt Id e n tificatio n

8Mx32 dram

Abstract: Samsung Capacitor sse
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The