8K X 8 Search Results

Contextual Info: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

C144

Abstract: transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
Contextual Info: fax id: 5205 1CY 7C14 4 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145)

IDT7174

Abstract: IDT71B74 L7C174PC12 L7C174PC15 L7C174PC20 L7C174PC25 L7C174WC
Contextual Info: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic ❑ High Speed Address-to-MATCH — 12 ns maximum ❑ High Speed Flash Clear

C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Contextual Info: 44 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145) • 0.65-micron CMOS for optimum speed/power

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C66 28-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C67 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

PIC16C77

Abstract: 200B PIC16C66 PIC16C67 PIC16C76 psp 1003
Contextual Info: PIC16C77 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

we348

Abstract: a2631 al 62
Contextual Info: □PM DPE832V Dense-Pac Microsystems, Inc. 8K X 32 CMOS EEPROM VERSAPAC O DESCRIPTION: The DPE832V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 8K X 32, 16K X 16 or 32K X 8. The module is built with four low-power C M O S 8K X 8

Logic diagram for asynchronous FIFO

Abstract: 108-PIN
Contextual Info: m 3ÖE D INTEGRATED DEVICE 4Ö2S771 GG072b2 5 Bi IDT 8K x 36 FIFO MODULE IDT7M2001 Integrated Device Technology, Inc. FEATURES: • First-In/First-Out memory module • Asynchronous and simultaneous read and write • Configurable as 8K x 36 or 16K x 18 unidirectional or 8K

Contextual Info: DPE8M628 □PM Dense-Pac Microsystems, Inc. O 8K X 16 CMOS EEPROM MODULE DESCRIPTION: The DPE8M628 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPRO M module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power CM O S 8K X 8 EEPROM s

16Kx8 static ram ttl

Contextual Info: □PM DPE8M628 Dense-Pac Microsystems, Inc. 8K X 16 CMOS EEPROM MODULE O DESCRIPTION: The D PE8M 628 is a high-performance Electrically Erasable and Programmable Read O nly M emory EEPRO M module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power C M O S 8K X 8 EEPROM s

Contextual Info: CY7B144 CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­ speed BiCMOS 8K x 8 and 8K x 9 dual­

S1380

Abstract: S1376
Contextual Info: 8K x 36 FIFO MODULE FEATURES: • F irst-In/First-O ut m em ory m odule • A synchronous and sim ultaneous read and w rite • C onfigurable as 8K x 36 o r 16K x 18 unidirectional or 8K x 18 bidirection al FIFO • M ultiple status flag s: Full, Em pty • U ltra-high-speed: 40ns access tim e

United Technologies Microelectronics

Contextual Info: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer

Contextual Info: □PM DPE8X16A Dense-Pac Microsystems, Inc. O 8K X 16 C M O S E E P R O M H ALF-PA C D ESC R IPT IO N : The DPE8X16A is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power CMOS 8K X 8 EEPROMs.

Contextual Info: fax id: 5205 C Y 7 C 145 ”• ■ ■ ¿¡¡P: C Y 7 C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True Dual-Ported memory cells which allow sim ultaneous reads of the same m em ory location 8K x 8 organization CY7C144 8K x 9 organization (CY7C145)

Contextual Info: CY7C4421 /4201 /4211/4221 CY7C4231 /4241 /4251 CYPRESS 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Features 64 x 9 CY7C4421 256 x 9 (CY7C4201 ) 512 x 9 (CY7C4211) 1K x 9 (CY7C4221 ) 2K x 9 (CY7C4231) 4K x 9 (CY7C4241 ) 8K x 9 (CY7C4251) High-speed 100-MHz operation (10 ns read/write cycle

CY7C462A

Abstract: CY7C464A CY7C466A IDT7205 IDT7206 IDT7207 CY7C460A XO 18
Contextual Info: 60A CY7C460A/CY7C462A CY7C464A/CY7C466A Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 8K x 9 FIFO (CY7C460A) • 16K x 9 FIFO (CY7C462A) • 32K x 9 FIFO (CY7C464A)

CY7C470

Abstract: CY7C472 CY7C474 pfr 4fi
Contextual Info: W CYPRESS CY7C470 CY7C472 CY7C474 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description • 8K x 9 16K x 9, and 32K x 9 FIFO buffer memory • Asynchronous read/write • High-speed 333-M H z read/write independent of depth/width

Contextual Info: Cd p m DPE8X16A 8K X 16 C M O S EEPROM HALF-PAC Dense-Pac M icrosystems, Inc .0 DESCRIPTION: The D P E8X 1 6A is a high-performance Electrically Erasable and Programmable Read O n ly M em ory EEPRO M module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power C M O S 8K X 8 EEPROM s.

Contextual Info: CYPRESS CY7C470 CY7C472 CY7C474 8K x 9 FIFO, 16Kx 9 FIFO, 32K x 9 FIFO with Programmable Flags Features Functional Description • 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory The CYC47X F IF O series consists of high-speed, low-power, first-in first-out

Contextual Info: Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet Dec. 1997 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for