8K X 8 Search Results

p20d

Abstract: CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H
Contextual Info: Qualification Report March, 1992 QTP 91296 Version 1.0 64K EPROM FAMILY, 0.8µ MARKETING PART NUMBER DEVICE DESCRIPTION CY7C261 8K x 8 POWER-SWITCHED CY7C263 8K x 8 CY7C264 8K x 8 600-MIL PKG CY7C266 8K x 8 POWER-SWITCHED EPROM PINOUT CY7C269 8K x 8 REGISTERED DIAGNOSTIC

CY7C144AV

Abstract: CY7C145AV CY7C006AV CY7C007AV CY7C016AV CY7C017AV CY7C138AV CY7C139AV
Contextual Info: CY7C138AV CY7C139AV CY7C144AV CY7C145AV CY7C006AV CY7C016AV CY7C007AV CY7C017AV 3.3V 8K/16K x 8, 8K x 9 Dual-Port Static RAM CY7C138AV/144AV/006AV CY7C139AV/145AV/016AV CY7C007AV/017AV 3.3V 8K/16K x 8, 8K x 9 Dual-Port Static RAM Features • True Dual-Ported memory cells which allow

1gb pc133 SDRAM DIMM 144pin

Abstract: 54-PIN PC100 gm72v66841
Contextual Info: 2 . PRODUCT QUICK REFERENCE PRODUCT QUICK REFERENCE HY XX X XX XX X X X X X X - xx x .L HYNIX MEMORY : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSITY & REFRESH 64M 4K Refresh 64M 8K Refresh 128M 4K Refresh 256M 8K Refresh 64 65 28 56 12 512M 8K Refresh

Contextual Info: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)

AT89C2051 microcontroller

Abstract: Microcontroller AT89C51 data sheet at89c2051 Microcontroller AT89C2051 AT89C51 microcontroller at89c2051 datasheet MICROCONTROLLER AT89C51 datasheet AT89C2051 microcontroller 80C32
Contextual Info: Microcontroller Selection Guide Microcontroller Part Number AT89C1051 AT89C2051 AT89C51 AT89LV51 AT89C52 AT89LV52 AT89S8252 Memory Size 1K x 8 2K x 8 4K x 8 4K x 8 8K x 8 8K x 8 8K x 8 Description 2.7-Volt, 80C31 Microcontroller with 1 Kbyte Flash, 20-Pin Package

Datasheet Unbuffered DDR2 SDRAM DIMM

Abstract: "DDR2 SDRAM" DDR2 SDRAM ddr2 DDR2 datasheet DDR2 DIMM DDR2 hynix DDR2 1Gb ddr2 667 inphi
Contextual Info: Last updated: April 2007 DDR2 SDRAM MODULE PART NUMBERING HYM XX X XX X XX X X X X X X XX - X SPEED HYNIX MODULE S6 S5 Y5 Y4 C4 E3 COMPONENT GROUP P2 : 256Mb DDR2 SDRAM 8K Ref./4Banks P5 : 512Mb DDR2 SDRAM 8K Ref./4Banks P1 : 1Gb DDR2 SDRAM 8K Ref./8Banks

Hitachi PIX-8144

Abstract: Hitachi PIX 8144 Pix-8144 PIX 8144 hitachi 8144 CY7C025-AC dual port 16 SRAM PLCC CY7C024 CY7C0241 CY7C0251
Contextual Info: Qualification Report QTP 96091/96393, Version 2.0 September 1996 Dual Port SRAM - R28 Technology, 6% Shrink CY7C0251 8K x 18 Dual Port SRAM CY7C025 8K x 16 Dual Port SRAM CY7C0241 4K x 18 Dual Port SRAM CY7C024 4K x 16 Dual Port SRAM CY7C145 8K x 9 Dual Port SRAM

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

A0LA

Contextual Info: CY7C144, CY7C145 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features Functional Description • True Dual-Ported Memory Cells that Enable Simultaneous Reads of the same Memory Location ■ 8K x 8 Organization CY7C144 ■ 8K x 9 Organization (CY7C145)

Contextual Info: CY7C144, CY7C145 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features Functional Description • True Dual-Ported Memory Cells that Enable Simultaneous Reads of the same Memory Location ■ 8K x 8 Organization CY7C144 ■ 8K x 9 Organization (CY7C145)

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIM INARY p y p p rc c Cascadeable 8K x 9 FIFO Cascadeable 16K x 9 FIFO Cascadeable 32K x 9 FIFO Features Functional Description • 8K x 9, 16K x 9, 32K x 9 FIFO buffer memory The CY7C460, CY7C462, and CY7C464 arc respectively, 8K, 16K, and 32K words

Contextual Info: I dt 8K x 36 FIFO MODULE ID T 7 M B 2 0 0 1 S Integrated DeviceTechnology. Inc FEATURES: • Flrst-ln/Flret-Out memory module • Asynchronous and simultaneous read and write • Configurable as 8K x 36 or 16K x 18 unidirectional or 8K x 18 bidirectional FIFO

LT 543 IC pin diagram

Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
Contextual Info: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

MBM2764-25

Abstract: MBM27256-25 MBM27128-30 MBM2764-30
Contextual Info: W W w m í m M H ^ ^ M NMOS & CMOS EPROMs Q u ic k G u id e T o P ro d u c ts in T h is Se c tio n a D o v lc a O r g a n i­ zation MBM2764-20 MBM2764-25 MBM2764-30 MBM2764-30X NMOS NMOS NMOS NMOS 8K 8K 8K 8K X MBM27C64-25 MBM27C64-30 CMOS CMOS 8K 8K X MBM27128-25

IDT7174

Abstract: IDT71B74 L7C174PC12 L7C174PC15 L7C174PC20 L7C174PC25 L7C174WC
Contextual Info: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic ❑ High Speed Address-to-MATCH — 12 ns maximum ❑ High Speed Flash Clear

C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Contextual Info: 44 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145) • 0.65-micron CMOS for optimum speed/power

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C66 28-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C67 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

PIC16C77

Abstract: 200B PIC16C66 PIC16C67 PIC16C76 psp 1003
Contextual Info: PIC16C77 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

we348

Abstract: a2631 al 62
Contextual Info: □PM DPE832V Dense-Pac Microsystems, Inc. 8K X 32 CMOS EEPROM VERSAPAC O DESCRIPTION: The DPE832V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 8K X 32, 16K X 16 or 32K X 8. The module is built with four low-power C M O S 8K X 8

L7C185KM25

Abstract: IDT7164 L7C185PC12 L7C185PC15 L7C185PC20
Contextual Info: L7C185 L7C185 DEVICES INCORPORATED 8K x 8 Static RAM Low Power 8K x 8 Static RAM (Low Power) DEVICES INCORPORATED FEATURES DESCRIPTION q 8K x 8 Static RAM with Chip Select Powerdown, Output Enable q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 12 ns maximum

Logic diagram for asynchronous FIFO

Abstract: 108-PIN
Contextual Info: m 3ÖE D INTEGRATED DEVICE 4Ö2S771 GG072b2 5 Bi IDT 8K x 36 FIFO MODULE IDT7M2001 Integrated Device Technology, Inc. FEATURES: • First-In/First-Out memory module • Asynchronous and simultaneous read and write • Configurable as 8K x 36 or 16K x 18 unidirectional or 8K

GR881

Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
Contextual Info: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.