8K X 8 Search Results

Contextual Info: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)

AT89C2051 microcontroller

Abstract: Microcontroller AT89C51 data sheet at89c2051 Microcontroller AT89C2051 AT89C51 microcontroller at89c2051 datasheet MICROCONTROLLER AT89C51 datasheet AT89C2051 microcontroller 80C32
Contextual Info: Microcontroller Selection Guide Microcontroller Part Number AT89C1051 AT89C2051 AT89C51 AT89LV51 AT89C52 AT89LV52 AT89S8252 Memory Size 1K x 8 2K x 8 4K x 8 4K x 8 8K x 8 8K x 8 8K x 8 Description 2.7-Volt, 80C31 Microcontroller with 1 Kbyte Flash, 20-Pin Package

Datasheet Unbuffered DDR2 SDRAM DIMM

Abstract: "DDR2 SDRAM" DDR2 SDRAM ddr2 DDR2 datasheet DDR2 DIMM DDR2 hynix DDR2 1Gb ddr2 667 inphi
Contextual Info: Last updated: April 2007 DDR2 SDRAM MODULE PART NUMBERING HYM XX X XX X XX X X X X X X XX - X SPEED HYNIX MODULE S6 S5 Y5 Y4 C4 E3 COMPONENT GROUP P2 : 256Mb DDR2 SDRAM 8K Ref./4Banks P5 : 512Mb DDR2 SDRAM 8K Ref./4Banks P1 : 1Gb DDR2 SDRAM 8K Ref./8Banks

Contextual Info: CY7C460 CY7C462 CY7C464 PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32Kx9FIFO Features Functional Description • 8K x 9 , 16K x 9 , 32K x 9 FIFO buffer memory T h e CY7C460, CY7C462, and CY7C464 are respectively, 8K, 16K, and 32K w ords

A0LA

Contextual Info: CY7C144, CY7C145 8K x 8/9 Dual-Port Static RAM with SEM, INT, BUSY Features Functional Description • True Dual-Ported Memory Cells that Enable Simultaneous Reads of the same Memory Location ■ 8K x 8 Organization CY7C144 ■ 8K x 9 Organization (CY7C145)

LT 543 IC pin diagram

Abstract: IC SRAM 8K X 8 microprocessor 80386 pin out diagram
Contextual Info: M IC R O N 1 MT56C0818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM T CACHE DATA SRAM SINGLE 8K x18 SRAM, DUAL4 K x 18 SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

C144

Abstract: transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
Contextual Info: fax id: 5205 1CY 7C14 4 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145)

IDT7174

Abstract: IDT71B74 L7C174PC12 L7C174PC15 L7C174PC20 L7C174PC25 L7C174WC
Contextual Info: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic ❑ High Speed Address-to-MATCH — 12 ns maximum ❑ High Speed Flash Clear

C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Contextual Info: 44 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145) • 0.65-micron CMOS for optimum speed/power

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C66 28-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

200B

Abstract: PIC16C66 PIC16C67 PIC16C76 PIC16C77
Contextual Info: PIC16C67 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

PIC16C77

Abstract: 200B PIC16C66 PIC16C67 PIC16C76 psp 1003
Contextual Info: PIC16C77 44/40-Pin EPROM-Based 8-Bit Microcontroller Product Brief Device Program Memory Data Memory Pins 8-Bit A/D CCP SSP USART PSP PIC16C66* 8K x 14 368 x 8 28 – 2 ch Yes Yes No PIC16C67* 8K x 14 368 x 8 40-44 – 2 ch Yes Yes Yes PIC16C76* 8K x 14 368 x 8

we348

Abstract: a2631 al 62
Contextual Info: □PM DPE832V Dense-Pac Microsystems, Inc. 8K X 32 CMOS EEPROM VERSAPAC O DESCRIPTION: The DPE832V is a high-performance Electrically Erasable and Programmable Read O nly M em ory EEPROM module and may be organized as 8K X 32, 16K X 16 or 32K X 8. The module is built with four low-power C M O S 8K X 8

GR881

Abstract: STATIC RAM 6264 6264 static RAM 6264 ram ram 6264 8k static ram 6264 6264* ram 6264 cmos ram 6264 8k
Contextual Info: GR881 8K x 8 NON-VOLATILE RAM GR881 (8K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR881 is a 8192 word by 8 bits (8K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

Contextual Info: DPE8M628 □PM Dense-Pac Microsystems, Inc. O 8K X 16 CMOS EEPROM MODULE DESCRIPTION: The DPE8M628 is a high-performance Electrically Erasable and Programmable Read Only Memory EEPRO M module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power CM O S 8K X 8 EEPROM s

b1443

Abstract: B1448 B1449 CY7B144-25LMB b1444 b1446 IDT7005 A12L CY7B144 CY7B145
Contextual Info: CY7B144 CY7B145 8K x 8/9 DualĆPort Static RAM with Sem, Int, Busy Features Functional Description D The CY7B144 and CY7B145 are highĆ speed BiCMOS 8K x 8 and 8K x 9 dualĆ port static RAMs. Various arbitration schemes are included on the CY7B144/5 to handle situations when multiple procesĆ

16Kx8 static ram ttl

Contextual Info: □PM DPE8M628 Dense-Pac Microsystems, Inc. 8K X 16 CMOS EEPROM MODULE O DESCRIPTION: The D PE8M 628 is a high-performance Electrically Erasable and Programmable Read O nly M emory EEPRO M module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power C M O S 8K X 8 EEPROM s

Contextual Info: CY7B144 CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­ speed BiCMOS 8K x 8 and 8K x 9 dual­

CY7C460-25JC

Abstract: DD107B CY7C460 CY7C462 CY7C464 IDT7205 IDT7206 CY7C460-40JC CY7C464-15PI
Contextual Info: fc.SE ]> • SSÖlbbS D01D7SS TOS ICYP CYPRESS SEMICONDUCTOR PRELIMINARY CYPRESS SEMICONDUCTOR Cascadable 8K x 9 FIFO Cascadable 16K x 9 FIFO Cascadable 32K x 9 FIFO Features Functional Description • 8K x 9 , 16K x 9 ,32K x 9 FIFO buffer memory • Asynchronous read/write

di/CY7C470-25DMB

Contextual Info: CY7C470 CY7C472 CY7C474 PRELIMINARY CYPRESS SEMICONDUCTOR 8K x 9 FIFO, 16K x 9 FIFO, 32K x 9 FIFO with Programmable Flags Functional Description 8K x 9 , 16K x 9, and 32K x 9 FIFO buffer memory Asynchronous read/write High-speed 33.3-MHz read/write independent of depth/width

S1380

Abstract: S1376
Contextual Info: 8K x 36 FIFO MODULE FEATURES: • F irst-In/First-O ut m em ory m odule • A synchronous and sim ultaneous read and w rite • C onfigurable as 8K x 36 o r 16K x 18 unidirectional or 8K x 18 bidirection al FIFO • M ultiple status flag s: Full, Em pty • U ltra-high-speed: 40ns access tim e

United Technologies Microelectronics

Contextual Info: Military Standard Products UT28F64 Radiation-Hardened 8K x 8 PROM Preliminary Data Sheet W IUNITED TECHNOLOGIES MICROELECTRONICS ICENTER June 1996 FEATURES □ Programmable, read-only, asynchronous, radiationhardened, 8K x 8 memory - Supported by industry standard programmer

Contextual Info: □PM DPE8X16A Dense-Pac Microsystems, Inc. O 8K X 16 C M O S E E P R O M H ALF-PA C D ESC R IPT IO N : The DPE8X16A is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8K X 16 or 16K X 8. The module is built with two low-power CMOS 8K X 8 EEPROMs.