8BIT NAND FLASH Search Results
8BIT NAND FLASH Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MD28F010-20/B |
|
28F010 - 128K X 8 Flash, Mil Temp |
|
||
| MD28F010-25/B |
|
28F010 - 128K X 8 Flash, Mil Temp |
|
||
| MD28F020-12/B |
|
28F020 - 2048K (256K x 8) CMOS Flash Memory |
|
||
| MD28F020-90/B |
|
28F020 - 2048K (256K x 8) CMOS Flash Memory |
|
||
| 54S133/BEA |
|
54S133 - NAND GATE, 13-INPUT - Dual marked (M38510/07009BEA) |
|
8BIT NAND FLASH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit |
OCR Scan |
KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll | |
VOICE RECORDER IC programming
Abstract: ri8c
|
OCR Scan |
KM29V64001 200us VOICE RECORDER IC programming ri8c | |
|
Contextual Info: KM29N16000ARS Flash ELECTRONICS 8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29N16000ARS 250us -TSOP2-400F -TSOP2-400R | |
|
Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59L1G81A 200us | |
|
Contextual Info: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance: |
Original |
EN27LN1G08 it/528 Protect011/12/30 9x11x1 | |
|
Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59D2G81A 250us | |
|
Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29N16000ATS/RS 250us KM29N16000A Figure14 0Q24234 | |
|
Contextual Info: ADVANCED DATASHEET IS34MC01GA08/16 IS34MC01GA08/16 3.3V 1Gb SLC NAND Flash Memory Specification and Technical Notes Page 1 IS34MC01GA08 IS34MC01GA16 128M x 8bit / 64M x 16bit NAND Flash Memory PRODUCT LIST Part Number VCC Range Organization IS34MC01GA08 IS34MC01GA16 |
Original |
IS34MC01GA08/16 IS34MC01GA08 IS34MC01GA16 16bit 48-TSOP 63-BGA | |
|
Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59L2G81A 250us | |
|
Contextual Info: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AR 250us 003170b | |
|
Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59L4G81A 250us | |
L4142Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us L4142 | |
|
Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us 71L4142 | |
|
Contextual Info: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase |
OCR Scan |
KM29V64001T/R 200us | |
|
|
|||
|
Contextual Info: KM29N3 2000R ELECTRONICS Fl ash 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte |
OCR Scan |
KM29N3 2000R 250us KM29N32000R 0031L | |
D0243Contextual Info: FLASH MEMORY KM29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Celi Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte |
OCR Scan |
KM29V32000TS/RS 250us D0243 | |
|
Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes |
Original |
F59L1G81A 200us it/528 | |
ti77
Abstract: BV EI 301
|
OCR Scan |
KM29V16000ATS/RS 250us KM29V16000A Figure15 0D242fl2 ti77 BV EI 301 | |
|
Contextual Info: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit |
Original |
F59D4G81A 250us | |
|
Contextual Info: ESM T F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte |
Original |
F59D1G81A 250us 1bit/528Byte | |
511ML
Abstract: 243L3 tsop 338 IR
|
OCR Scan |
KM29V32000TS/RS 250us 0D243A2 511ML 243L3 tsop 338 IR | |
TA 7609Contextual Info: EDI784MSV 4Megx8 NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features • Single 3.3 - Volt Supply • Separate Output Buffer power supply 3.3V or 5V • Organization Memory Cell array (4M+128K) bit x 8bit Data Register (512 +16) bit x 8 bit |
Original |
EDI784MSV EDI784MSV50BC EDI784MSV50BI EDI784MSV TA 7609 | |
EDI784MSV50BB
Abstract: EDI784MSV50BC EDI784MSV50BI
|
Original |
EDI788MSV EDI784MSV50BM EDI788MSV EDI784MSV50BB EDI784MSV50BC EDI784MSV50BI | |
F59L1G81AContextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes |
Original |
F59L1G81A 200us F59L1G81A | |