8BIT NAND FLASH Search Results
8BIT NAND FLASH Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TC4011BP |
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CMOS Logic IC, 2-Input/NAND, DIP14 | Datasheet | ||
| TC4093BP |
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CMOS Logic IC, 2-Input/NAND, DIP14 | Datasheet | ||
| TC74HC00AP |
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CMOS Logic IC, Quad 2-Input/NAND, DIP14 | Datasheet | ||
| 7UL1G00NX |
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One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC | Datasheet | ||
| TC7SET00F |
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One-Gate Logic(L-MOS), 2-Input/NAND, SOT-25 (SMV), -40 to 125 degC | Datasheet |
8BIT NAND FLASH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: KM29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit |
OCR Scan |
KM29V16000ATS KM29V16000ATS/RS 264-byte 250ps -TSOP2-400F -TSOP2-400R 0031flfll | |
H27UAG8T2Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 Release H27UAG8T2B Series 16Gb 2048M x 8bit NAND Flash 16Gb NAND Flash H27UAG8T2B Rev 1.0 /Aug. 2010 *58b7d520-e522* 1 B26798/177.179.157.212/2010-08-06 17:39 APCPCWM_4828539:WP_0000001WP_000000 |
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0000001WP H27UAG8T2B 2048M H27UAG8T2B 58b7d520-e522* B26798/177 H27UAG8T2 | |
TS 4142
Abstract: ro1f
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OCR Scan |
KM29V64001 200us 71b4142 DD2447D -TSOP2-400F 74tMAX -TSQP2-400R DD24471 TS 4142 ro1f | |
VOICE RECORDER IC programming
Abstract: ri8c
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OCR Scan |
KM29V64001 200us VOICE RECORDER IC programming ri8c | |
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Contextual Info: KM29N16000ARS Flash ELECTRONICS 8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29N16000ARS 250us -TSOP2-400F -TSOP2-400R | |
two-plane program nandContextual Info: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes |
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F59L4G81A 250us 4bit/512Byte two-plane program nand | |
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Contextual Info: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance: |
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EN27LN1G08 it/528 Protect2/30 9x11x1 | |
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Contextual Info: ESM T F59L1G81A Operation Temperature Condition -40 C~85 C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59L1G81A 200us | |
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Contextual Info: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59D4G81A 250us | |
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Contextual Info: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
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F59D2G81A 250us | |
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Contextual Info: EN27LN1G08 EN27LN1G08 1 Gigabit 128 Mx 8 , 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V • Reliable CMOS Floating-Gate Technology • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit • Endurance: |
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EN27LN1G08 it/528 Protect011/12/30 9x11x1 | |
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Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59D2G81A 250us | |
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Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29N16000ATS/RS 250us KM29N16000A Figure14 0Q24234 | |
F59L2G81A
Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
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Original |
F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h | |
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Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59L2G81A 250us | |
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Contextual Info: KM29V16000AR Flash ELECTRONICS 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES •Single 3.3-volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AR 250us 003170b | |
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Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase |
Original |
F59L4G81A 250us | |
L4142Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us L4142 | |
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Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte |
OCR Scan |
KM29V16000AT/R 250us 71L4142 | |
Esmt
Abstract: F59D2G81A
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Original |
F59D2G81A 4bit/512Byte Esmt F59D2G81A | |
F59L4G81A
Abstract: F59L two-plane program nand "4bit correction"
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Original |
F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction" | |
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Contextual Info: EN27SN1G08 EN27SN1G08 1 Gigabit 128 Mx 8 , 1.8 V NAND Flash Memory Features • Voltage Supply: 1.7V ~ 1.95V • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit |
Original |
EN27SN1G08 it/528 9x11x1 48-pin | |
A17-A22Contextual Info: Advance Information KM29V64000TS/RS FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : {512 + 16)bit x 8bit • Automatic Program and Erase |
OCR Scan |
KM29V64000TS/RS 200us KM29V64000 P2-400F 10max] -TSOP2-400R A17-A22 | |
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Contextual Info: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase |
OCR Scan |
KM29V64001T/R 200us | |