ESMT Search Results

Contextual Info: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension

AD5265A

Abstract: 4 Channel Analog Volume Control 6 Channel Analog Volume Control
Contextual Info: ESMT Preliminary AD5265A 2.5W/CH Stereo Filter-less Class-D Audio Amplifier with Headphone Driver Features Description z z z z z z The AD5265A is a stereo, filter-less class-D audio amplifier with headphone driver. Operating with 5.0V loudspeaker driver supply, it can deliver 2.5W/CH

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Contextual Info: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

6 Channel Analog Volume Control

Abstract: AD52660A AD52660 12V audio amplifier with volume control 12v 4 channel AUDIO power AMPLIFIER Stereo Audio amplifier 12 pin stereo amplifier with heat sink 4 Channel Analog Volume Control boombox 28 pin 10W Class-D audio 12V Supply power amplifier
Contextual Info: ESMT AD52660A 12V STEREO CLASS-D AUDIO POWER AMPLIFIER Features Operate from 8-12V supply voltage Class D power 9.5W/ch into 8Ω from 12V supply @ 10% THD+N for stereo 11.8W/ch into 6Ω from 12V supply @ 10% THD+N for stereo Support single-ended or differential analog input

Contextual Info: ESMT M24L416256SA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (10 Sep. 2007) - Modify Vcc (max) =3.3V to 3.6V Revision 1.2 (27 Feb. 2008) - Add 44-pin TSOPII package - Add Avoid timing Revision 1.3 (24 Mar. 2008) - Add I-grade for TSOPII package

M12L64164A

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

Contextual Info: ESMT M24L48512DA Revision History Revision 1.0 19 Jul. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/10 ESMT PSRAM M24L48512DA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • •

Contextual Info: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z

Contextual Info: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Nov. 2007 Revision : 1.0 1/47 ESMT Preliminary M53D128168A Mobile DDR SDRAM 2M x 16 Bit x 4 Banks Mobile DDR SDRAM

ELITE FLASH STORAGE TECHNOLOGY INC

Abstract: BPL TV soic-8 200mil
Contextual Info: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over

Contextual Info: ESMT M12L128168A 2L Operation Temperature Condition -40°C~85°C SDRAM 2M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

Contextual Info: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Jan. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min) and tSHZ(max)

Contextual Info: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory „ FEATURES - Block erase time 1sec (typical) - Sector erase time 90ms(typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz

M14D1G166

Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
Contextual Info: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.

Contextual Info: ESMT M24L416256DA Revision History Revision 1.0 04 Jul. 2007 -Original Revision 1.1 (20 Nov. 2007) - Modify the descriptive error for standby mode, tHZWE and tLZWE description Revision 1.2 (22 Nov. 2007) - Modify tHZBE and tLZBE descriptive and restore tHZWE and tLZWE description

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

Contextual Info: ESMT M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Revision 0.4 (01 Oct. 2007) - Modify IDD spec. Revision 1.0 (20 Nov. 2007) - Delete “Preliminary”

Contextual Info: ESMT F25L08PA Flash 8Mbit 1Mx8 3V Only Serial Flash Memory with Dual „ FEATURES y y Single supply voltage 2.7~3.6V Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 100MHz

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

Contextual Info: ESMT F49L160UA/F49L160BA 16 Mbit 2M x 8/1M x 16 3V Only CMOS Flash Memory 1. FEATURES z z Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z 2,097,152x8 / 1,048,576x16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands

Mobile SDRAM

Abstract: DDR SDRAM SDRAM PSRAM sdram 4M 16 4 FLASH NOR 64mb Q-309 Q110
Contextual Info: Product Selection Guide of ESMT KGD SDRAM Updated Date : April'2008 Density Organization Description 16Mb 1Mb*16 32Mb 2Mb*16 1Mb*32 4Mb*16 Refresh Speed MHz Pad coordinates MP SDRAM 2.5V SDRAM 3.3V SDRAM 3.3V SDRAM 3.3V SDRAM 2.5V 2K 2K 2K 2K 4K 143 Now

f25l08

Abstract: F25L08PA F25L08P
Contextual Info: ESMT F25L08PA Operation Temperature Condition -40°C~85°C Flash „ 3V Only 8 Mbit Serial Flash Memory with Dual FEATURES y y Single supply voltage 2.7~3.6V Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 100MHz