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    Elite Semiconductor Memory Technology Inc F59L2G81A25T

    Electronic Component
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    ComSIT USA F59L2G81A25T 500
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    elite F59L2G81A25BIG

    2 GBIT(256M X 8) 3.3V NAND FLASH MEMORY Flash, 256MX8, 25ns, PBGA63
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    ComSIT USA F59L2G81A25BIG 20
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    Elite Semiconductor Memory Technology Inc F59L2G81A-25TG

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    NexGen Digital F59L2G81A-25TG 534
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    Win Source Electronics F59L2G81A-25TG 25,920
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    Elite Semiconductor Memory Technology Inc F59L2G81A-25TIG

    FLASHMemory;2Gb;256Mx8bit;parallel8bit;25ns;2.7V-3.6V;-40+85deg.C;SMD;TSOP48
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    Chip Stock F59L2G81A-25TIG 6,720
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    Elite Semiconductor Memory Technology Inc F59L2G81A-25T

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    Win Source Electronics F59L2G81A-25T 33,000
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    F59L2G81A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NAND Flash

    Abstract: F59L2G81A
    Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte


    Original     		F59L2G81A 350us NAND Flash F59L2G81A PDF

    F59L2G81A

    Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
    Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h PDF

    Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase


    Original     		F59L2G81A 250us PDF