88A DIODE Search Results

Zener diode smd marking U4

Abstract: Zener diode smd marking T6 zener marking code u3 t3 smd diode marking code u9 3DB2 Zener diode smd marking T4 UG 74 a smd diode marking code ug smd diode marking U1 Zener diode smd marking T4 TN
Contextual Info: PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose Zener diodes in SOT353 SC-88A very small Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages.

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

GE88L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GE88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

88N30

Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
Contextual Info: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

PSSI2021SAY

Abstract: 006aaa024 PDTC124XU PSSI2021 RESISTOR FOOTPRINT 0617
Contextual Info: PSSI2021SAY Constant current source in SOT353 package Rev. 02 — 20 October 2004 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of

GU88L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GU88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

GI88L02

Abstract: A321
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GI88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GI88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: APT30M30JLL 88A 0.030Ω 300V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

PSSI2021SAY

Abstract: SOT353-1 thermal resistance
Contextual Info: PSSI2021SAY Constant current source in SOT353 package Rev. 03 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of

GJ88L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

diode 88A

Abstract: 88a diode and/kvp 88a
Contextual Info: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M38JFLL

Contextual Info: APT50M38JFLL 500V R POWER MOS 7 0.038Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M38JLL

Contextual Info: APT50M38JLL 500V 88A 0.038Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

atmega88AP

Contextual Info: ATmega48A/PA/88A/PA/168A/PA/328/P ATMEL 8-BIT MICROCONTROLLER WITH 4/8/16/32KB IN-SYSTEM PROGRAMMABLE FLASH DATASHEET Features  High Performance, Low Power Atmel AVR® 8-Bit Microcontroller Family  Advanced RISC Architecture ̶ 131 Powerful Instructions – Most Single Clock Cycle Execution

APT30M30JFLL

Contextual Info: APT30M30JFLL 300V POWER MOS 7 R 88A FREDFET 0.030Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

1705

Abstract: A1705 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 A1703 TA 1705 F
Contextual Info: MMBD1701/A / 1703/A / 1704/A / 1705/A 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 NC 1 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 1703 2 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 2 3 3 1704 2 3 1 2 1 1705 2 High Conductance Low Leakage Diode

BEVO Halbleitertechnik

Contextual Info: Three Phase Rectifier Bridges PSD 82 IdAVM = 88A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 82/08 PSD 82/12 PSD 82/14 PSD 82/16 PSD 82/18 Symbol Test Conditions IdAVM IFSM TC = 110°C, module

Contextual Info: APT30M30JLL 88A 0.030W 300V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

AP88N30W

Abstract: ap88n30 VDS300V
Contextual Info: AP88N30W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ High Speed Switching BVDSS 300V RDS ON 48mΩ ID G 88A S Description AP88N30 from APEC provide the designer with the best combination of fast

diode sg 89a

Abstract: A1703 MMBD1703A sg 87a A1705 mmbd1701-1705 MMBD1704A MMBD1701 MMBD1701A MMBD1703
Contextual Info: Semiconductor'" MMBD1701/A 1 1703/A 1 1704/A / 1705/A _S_ 85 m h- M ARKING M M BD 1701 M M BD1703 M M BD1704 M M BD1705 SOT-23 85 87 88 89 M M BD 1701A M M BD 1703A M M BD 1704A M M BD 1705A 85A 87A 88A 89A High Conductance Low Leakage Diode Sourced from Proce ss 1T.

D 1703

Contextual Info: M IC D N D U C T D R i MMBD1701 M M BD 1703 M M BD 1704 M M BD 1705 SOT-23 MARKING 85 M M BD 1701A 87 M M BD 1703A 88 M M BD 1704A 89 M M BD 1705A / 1703/A / 1704/A / 1705/A MMBD1701/A / 1703/A / 1704/A / 1705/A 85A 87A 88A 89A High Conductance Low Leakage Diode

SC-88A footprint

Abstract: BAS19LT1G JX SOT23 SOT23 Marking JX sot-23 Marking do hM sot-353 marking 04 sot-23 marking 25 SOT-23 ref marking cd sc-88a BAS19LT3G
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage

BAS19LT1G

Abstract: BAS21LT1 BAS19 BAS19LT1 BAS19LT3 BAS20 BAS20LT1 BAS21 BAS21DW5T1 On semiconductor date Code sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features http://onsemi.com • Pb−Free Packages are Available HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage BAS19 BAS20 BAS21