88A DIODE Search Results

88a diode

Abstract: SC88-A
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN1NPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT353 * Small surface mounting type. SC-88A/SOT353 * Multiple diodes in one small surface mount package.

MMBD4448HDQWKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MMBD4448HDQWKGP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * High speed. (TRR=4.0nSec Max.)

MMBD4448HCQWKGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MMBD4448HCQWKGP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * High speed. (TRR=4.0nSec Max.)

CHP1NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHP1NGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * Multiple diodes in one small surface mount package.

CHN1NGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHN1NGP SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT353 * Small surface mounting type. SC-88A/SOT353 * Multiple diodes in one small surface mount package.

SOT-353

Abstract: marking 88a
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHP1NPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 80 Volts CURRENT 25 mAmpere APPLICATION * Ultra high speed switching FEATURE SC-88A/SOT-353 * Small surface mounting type. SC-88A/SOT-353 * Multiple diodes in one small surface mount package.

JS SOT23-3

Abstract: sot23 marking JR BAS20LT1 BAS21 BAS21DW5T1 BAS21LT1 BAS19 BAS19LT1 BAS20 MARKING JS sot-23
Contextual Info: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT-23 3 CATHODE 1 ANODE SC-88A

Zener diode smd marking U4

Abstract: Zener diode smd marking T6 zener marking code u3 t3 smd diode marking code u9 3DB2 Zener diode smd marking T4 UG 74 a smd diode marking code ug smd diode marking U1 Zener diode smd marking T4 TN
Contextual Info: PZUxDB2 series Dual Zener diodes Rev. 01 — 31 March 2008 Product data sheet 1. Product profile 1.1 General description Dual isolated general-purpose Zener diodes in SOT353 SC-88A very small Surface-Mounted Device (SMD) standard plastic and dark-green plastic packages.

CHM3413KGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

GE88L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GE88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GE88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

do-205aa

Abstract: ana 650 DAD 1000 1N3288 1N3288A 1N3289A 24UNF N3291 N3295A N-329
Contextual Info: Data Sheet No. PD-2.184 INTERNATIONAL RECTIFIER I« R 1 N3S8B, 1 N 3S 88A SERIES 1OO Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3288 100* lF A V @ Max. Tc IFSM @ 50 Hz @ 60 Hz l 2t @50 Hz @ 60 Hz i2 v n

88N30

Abstract: IXFH88N30P 88N30P IXFK88N30P diode 300v IXFT88N30P
Contextual Info: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A Ω 40mΩ 200ns TO-268 (IXFT) G S Tab Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

PSSI2021SAY

Abstract: 006aaa024 PDTC124XU PSSI2021 RESISTOR FOOTPRINT 0617
Contextual Info: PSSI2021SAY Constant current source in SOT353 package Rev. 02 — 20 October 2004 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of

GI88L02

Abstract: A321
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GI88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GI88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: APT30M30JLL 88A 0.030Ω 300V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

PSSI2021SAY

Abstract: SOT353-1 thermal resistance
Contextual Info: PSSI2021SAY Constant current source in SOT353 package Rev. 03 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 SC-88A plastic package. Stabilized output current of between 15 µA and 50 mA by connection of

GJ88L02

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GJ88L02 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 25V 5m 88A Description The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

diode 88A

Abstract: 88a diode and/kvp 88a
Contextual Info: APT30M30JFLL 300V POWER MOS 7 R 0.030Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

MMBD1701

Abstract: MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 a1705 marking 05 SOT 89
Contextual Info: Connection Diagrams 3 1701 85 3 1 2 MMBD1701 MMBD1703 MMBD1704 MMBD1705 SOT-23 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 85A 87A 88A 89A 1 3 1703 2NC 1 1704 3 2 1 3 2 1 2 3 1705 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

APT50M38JFLL

Contextual Info: APT50M38JFLL 500V R POWER MOS 7 0.038Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

diode 88A

Contextual Info: APT50M38JFLL 500V POWER MOS 7 R 0.038Ω 88A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M38JLL

Contextual Info: APT50M38JLL 500V 88A 0.038Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON