860 AD Search Results

Contextual Info: Cartridge Fuse Holders Enclosed Fuseholders > Panel/Circuit Board Mounted 860/862 Series Enclosed Fuse Holders for 5x20mm and 6.2x32mm Fuses VDE Product Characteristics 860 865 Cap For 5×20mm Fuses 860 Series Holder Panel Mounted Compatible Fuses 860 Series

Contextual Info: PH FIELD & LABORATORY INSTRUMENTS pH/mV/Temp Handheld Meter with RS232 Capability PHH-860 $ 300 PHH-860 shown smaller than actual size with optional PHH-860-SW $75 software and RS232 cable Carrying case included PHE-860 electrode included ߜ Dual LCD Display Shows pH / °C or °F or mV / °C or °F

Contextual Info: 820 840 860 Hand-Held DSO/DMM ࡯ 20Mhz [820], 40MHz [840], 60MHz [860] bandwidths ࡯ Models 840 and 860 include FFT ࡯ Built in High accuracy 6000 count True RMS DMM ࡯ 125KB record length for each channel ࡯ 200MS/s sampling rate single channel and 100MS per

TA8864

Abstract: TA1664 extrusion
Contextual Info: Automotive: Traffic Advisor TA1664/TA8864-series Traffic Advisor ENGINEERING COMPANY INC. Route 145, Winthrop Road, Chester, Connecticut 06412 Phone: 860 526-9504 Fax: (860) 526-4078 Internet: www.whelen.com Sales e-mail: autosale@whelen.com Canadian Sales e-mail: autocan@whelen.com

philips fr 310

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D252 CGY887B 860 MHz, 27.8 dB gain push-pull amplifier Product specification 2001 Nov 27 Philips Semiconductors Product specification 860 MHz, 27.8 dB gain push-pull amplifier FEATURES CGY887B PINNING - SOT115J

Contextual Info: MAFRIN0332 Single Junction Robust Lead Circulator 860 MHz—960 MHz Rev. C Applications Features ♦ Wireless Infrastructure ♦ GSM ♦ RoHS Compliant ♦ BeO free Electrical Specifications Parameter Conditions Units Min Frequency Range MHz 860 Impedance

Avantek rf amplifier

Abstract: AWP-900 AVANTEK power amplifier Avantek amplifier AVANTEK AVANTEK awp AVANTEK KS22090 avantek Low Noise Amplifier am KS-22090L1 Avantek UA-152
Contextual Info: Cellular Radio: High Power/Low Noise Cellsite Amplifiers AWP-905 Series: Base Station Power Amplifiers AWP-900: Base Station Power Amplifier AWP-900 Features Features • 860-900 MHz • 860-900 MHz • Output power of 45 watts ±1 dB • TTL controlled on/off and power adjust

BGD802

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES

SEIWG-005

Abstract: 1200VM vhf antenna mtbf SEIWG-005A LEMO WIRELESS BASE STATION STAR1200VM transceiver fsk baud carrier uhf base station RF front end
Contextual Info: STAR 1200VM Specification STAR 1200VM Base Station Specification Revision 2.7 November 13, 1997 Nova Engineering, Inc. 5 Circle Freeway Drive Cincinnati, Ohio 45246 Phone: 513-860-3456 Fax: 513-860-3535 www.nova-eng.com STAR 1200VM Specification 1 . Introduction

08818

Abstract: Shortform Data and Cross References
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY885A 860 MHz, 18.5 dB push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Oct 22 Philips Semiconductors Product specification 860 MHz, 18.5 dB push-pull amplifier FEATURES

Contextual Info: MAFRIN0495 Single Junction Circulator 860 MHz—872 MHz Rev. B Applications Features ♦ Wireless Infrastructure ♦ ♦ RoHS Compliant ♦ BeO free Electrical Specifications Parameter Conditions Units Min Frequency Range MHz 860 Impedance Ω Insertion Loss

BGD812

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

BGD814

Abstract: DIN45004B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 CGY887A 860 MHz, 25.5 dB gain push-pull amplifier Product specification Supersedes data of 2001 Oct 25 2002 Apr 18 Philips Semiconductors Product specification 860 MHz, 25.5 dB gain push-pull amplifier

BGD812

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD816L 860 MHz, 21.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 May 18 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802

MCD990

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 CGD914; CGD914MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jul 25 2001 Nov 01 Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier

bgy887

Contextual Info: DATA SHEET book, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 Philips Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J

Contextual Info: DAT dbook, halfpage M3D252 BGY887 860 MHz, 21.5 dB gain push-pull amplifier Product specification Supersedes data of 1999 Mar 30 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain push-pull amplifier FEATURES BGY887 PINNING - SOT115J

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGY883 860 MHz, 15 dB gain push-pull amplifier Product specification Supersedes data of 1997 Apr 14 2001 Oct 31 NXP Semiconductors Product specification 860 MHz, 15 dB gain push-pull amplifier FEATURES BGY883

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD902L 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1999 Aug 17 2001 Oct 30 Philips Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DAT andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES