85GHZ Search Results

Traveling Wave Amplifier

Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
Contextual Info: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

HMC394LP4

Abstract: 10k 8 pin sip resister 5-bit counter variable power divider at 15 ghz 10k sip resister
Contextual Info: HMC394LP4 v00.0501 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offsett synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Parallel 5-Bit Control

spa1526

Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

Contextual Info: HMC394LP4 v01.0701 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32

transistor bc 564

Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

AV02-0626EN

Abstract: Avago Mounted Amplifiers ka-band bare ka band gaas fet Package Ka-band 1A12 30SPA0536 8A10 2.4ghz 4w 32A16
Contextual Info: Ka-band 2W/4W MMIC Power Amplifiers in 7x7mm Low-cost SMT Package By Kohei Fujii and Henrik Morkner White Paper Abstract Power Amplifier Design The development of PHEMT, 24 to 31GHz 2W/4W power amplifier MMICs are described. The amplifier was designed with highly integrated distributed line-based

Transistor BC 457

Abstract: bc 457 Transistor MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R MCH185A100JK
Contextual Info: SPA-1526Z SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA-1526Z is made with InGaP-on-GaAs

MCH185A100JK

Abstract: transistor Bc 540 pin transistor Bc 540
Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs

2SC1260

Abstract: 2sc1255 2SC1150 2SC1278S 2SC1210 2SC1252 2SC1265 2SC1268 2sc1162 2SC1269
Contextual Info: - 102 - M X Ë f ê m £ £ Ta=25?C, *Ep[áTc=25'£ Pc ’C tu m Pc* (V) *± a 2SC1162 H i 2SC1164 2SC1165 2SC1ÎÔ9 MS (A) (V) (W) HS SW 60 50 1 0.8 (W) ( U A) œ tt (Ta=25'C) (max) 0.5 40 25 150 20 35 60 320 0.3 20 25 90 Vc e (V) Íc / I e (A) 1 (V) 0.6

Contextual Info: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz

HBT 01 - 05

Abstract: 5-bit counter HMC394LP4
Contextual Info: HMC394LP4 v02.1101 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 3 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32

Transistor BC 457

Abstract: MCH185A100JK MCH185A101JK MCH185CN104KK SOF-26 TAJA105K020R
Contextual Info: SPA-1526Z Preliminary SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Product Package: SOF-26 Product Description Features RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar

HBT 01 - 05

Abstract: HMC394
Contextual Info: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz Selectable Division from 2 to 32

Contextual Info: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz

HBT 01 - 05

Abstract: HMC394
Contextual Info: HMC394LP4 v06.0604 GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz

Contextual Info: MITSUBISHI SEM ICO ND UC TO R <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POW ER AM PLIFIER Specifications are subject to ch an g e w ithout notice. DESCRIPTION PIN CONFIGURATION TOP VIEW T h e M G F 7 1 6 9 C is a monolithic m icrow ave integrated

5-bit counter

Abstract: HBT 01 - 05 HMC394LP4 CMOS counter divider 10 100 1000 DIVIDE-BY-20
Contextual Info: HMC394LP4 v04.1102 MICROWAVE CORPORATION GaAs HBT PROGRAMMABLE 5-BIT COUNTER, DC - 2.2 GHz FREQ. DIVIDER & DETECTORS - SMT 10 Typical Applications Features Programmable divider for offset synthesizer and variable divide by N applications: SSB Phase Noise: -153 dBc/Hz @ 100 kHz

MCH185A100JK

Abstract: 1000PPM
Contextual Info: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs