84725 Search Results

diode IN5399

Abstract: IN5399 in5391 diode IN5391 N5399 diode IN5391 diode rectifier in5399 3 Ampere silicon Diode IN5397 20 ampere diode
Contextual Info: DIODES LIMITED IN5391 TO IN5399 SERIES FAI RAC RES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON RECTIFIERS With “ LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

240kr

Abstract: DV-1-10K DV-1-12K DV-1-15K DV-1-20K DV-2-10K DV-2-12K DV-2-15K DV-2-20K DV-3-10K
Contextual Info: DIODES LIMITED HIGH VOLTAGE-LOW CURRENT RECTIFIERS DV- SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS C heaper P IV ratings 5kv to 4 0 k v Low Reverse C u rren t 2 5 0 Nanosecond Reverse R ecovery*

DI810

Abstract: DI-840C DI-850C DI880 DI-820C DI820 8150C 850e DI-8150C DI-815C
Contextual Info: DIODES LIMITED TYPES DI-815C thru DI-8150C F A IR A C R E S ESTATE. D ED W O RTH ROAD. W IN D SO R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS -W- 1500 to 15,000 VOLTS PEAK INVERSE VOLTAGE -W- UP TO 750ma DC OUTPUT CURRENT

SD10 Diode

Abstract: SD4 diode diode SD4 diodes with 4 ampere SD6 Diode diode 5 ampere SD-05-SD-10 5 ampere diode SD-05 SD-10
Contextual Info: DIODES LIMITED SD-05-SD-10 SERIES FAIRACRES ESTATE. DEDW ORTH ROAD, W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEA TU R ES. High Conductance Leads

selenium rectifier

Abstract: selenium DS-10 selenium diodes 10DS10 "selenium rectifier"
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS DS- SERIES DIODES LIMITED FAIRACRES ESTATE. DEDWORTH ROAD, W INDSOR. BERKSHIRE. Telephone: W INDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS Low Reverse C u rren t P IV Ratings 4 K V - 10 K V Priced to Replace Selenium

diode 3a05

Abstract: 3a05 diode IN4142 3A05 Diode diode with PIV 200 1N4145 COLOR MARKING CODE ON DIODE 1N4142 1IN4139-1N4145 IN4142
Contextual Info: DIODES LIMITED 1N4139-1N4145 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS M E C H A N IC A L < 4 — .310 MAX - i .050

DI-758

Abstract: zener 751 DI758 VR 747/01 DI-759 DI-749 DI-747 DI-746 dl 746 DI-750
Contextual Info: DIODES LIMITED 400 MW ZENER DIODES DI-746-DI 759 SERIES FAIRACRES ESTATE. DEDWORTH ROAD, WINDSOR. BERKSHIRE. Telephone: WINDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS The Diodes Limited Zener types listed below are plastic encapsulated counterparts of the JEDEC devices

DI-976

Abstract: D1960 IN 965 b zener DI-962 DI-957-DI-976 DI-959 DI-961 DI-958 DI-963 DI-965
Contextual Info: DIODES LIMITED 40 0 M W ZENER DIODES DI-957-DI-976 SERIES FAIRACRES ESTATE. DEDWORTH ROAD. WINDSOR. BERKSHIRE. Telephone: WINDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS The Diodes Limited Zener types listed below are plastic encapsulated counterparts of the JEDEC devices

1N1005

Abstract: IN2999 1N2974 IN3008 1N2970-1N3015 1N2988 Diode zener 3a 1N2976 zener diode fz 1N2970
Contextual Info: 10 WATT ZENER 1N2970-1N3015 SERIES D IO D ES LIM ITED FAIRA C RES ESTATE. DEDWORTH ROAD, W IN D SO R, BER KSH IR E. Telephone: W IN D SO R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS EXTREMELY LOW DYNAMIC IMPEDANCES SHARP ZENER KNEES— 100% TESTED ELECTRICAL CHARACTERISTICS: T b = 3 0 ± 3 °C

in5400 diode

Abstract: IN5408 IN5408 diodes Current Rating of IN5408 diode 3E05 diode IN5408 IN5400 in5404 diode Current Rating of IN5402 diode in5408 diode
Contextual Info: DIODES LIMITED IN5400 t o IN5408 FAIRACRES ESTATE. DEDWORTH ROAD. W INDSOR. BERKSHIRE. Telephone: W INDSOR 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS SINGLE JUNCTION THREE AMPERE SILICON RECTIFIERS The 3E Series silicon rectifiers offer current ratings up to 3 Am­

BR82D

Abstract: GDI-30F BR84D BYX74-200 BR-86D BR81D br-82d BR86D BR88D BYX74-100
Contextual Info: BR8XD and DIODES LIMITED BYX74-X SERIES FAI RAC RES ESTATE. D ED W O R T H ROAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1.5 AMPERE SILICON BRIDGE RECTIFIER With “LOCKED-IN” Reliability FEATURE'S

BR84B

Abstract: BR88B Rectifier BR86B bridge rectifier Br88B BR81B BR82B BR88B bridge rectifer br-84b
Contextual Info: DIODES LIMITED BR8XB SERIES FAIRACRES ESTATE. DEDW O RTH ROAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1.3 AMPERE SILICON BRIDGE RECTIFER With “LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation

ln4001

Abstract: 1N4001-1N4007 IN4003 diode 1N4001 specifications 1N4007 diodes 1N4007 1N4001 IN4003 forward voltage diode 1n4001 diode in4003
Contextual Info: DIODES LIMITED 1N4001-1N4007 SERIES FAIRACRES ESTATE. DEDW O RTH ROAD. W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 Telex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON RECTIFIERS With “LOCKED-IN” Reliability FEATURES • Superior Rectification Efficiency

BR510

Abstract: BR54 A1510 BR52 br56 A1505 A151 A152 A154 A156
Contextual Info: DIODES LIMITED A15X-BR5X SERIES FAIRACRES ESTATE. DEDW O RTH R OAD. W IN D S O R . BERKSHIRE. T elephone: W IN D S O R 69571 T elex: 847255 SEMICONDUCTOR MANUFACTURERS 1 AMPERE SILICON BRIDGE With “ LOCKED-IN” Reliability FEATURES High Conductance Leads • Advanced Surface Passivation • Low-Noise Operation

svc251

Contextual Info: Ordering number: EN 774E No.774E i SVC251SPA Diffused Junction Type Silicon Diode Varactor Diode for AFC, CB PLL Features The SVC251SPA is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry.

82830

Abstract: 82945 115v 400Hz 7451 84710 82930 PICO Electronics Ultra Miniature 400Hz Power 26v 400Hz 82855 76874
Contextual Info: Ultra Miniature 400Hz Power Transformers: SURFACE MOUNT .375 VA to 2.4 VA Primary Voltages of 115V or 26V SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures

4522

Abstract: s 452-2 PICO Electronics Ultra Miniature 400Hz Power 115v 26V 400Hz pico electronics transformers 76854
Contextual Info: Ultra Miniature 400Hz Power Transformers Page 1 of 8 Ultra Miniature 400Hz Power Transformers: SURFACE MOUNT .375 VA to 2.4 VA Primary Voltages of 115V or 26V SURFACE MOUNT PICO surface mount units utilize materials and methods to withstand extreme temperatures of vapor phase, I.R., and other reflow procedures without degradation of

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK New Article Feature by Hittite Microwave Corporation High Performance SiGe PLLs Pair with Low

Contextual Info: PICO’S miniature 400 Hz transformers JfSHIfL SURFACE 115V/26V 1fades Primary _ — SBC/ VOLT 5.0 CT IIP \ Serial M ax Humber Height A C D S 76000 .415 10.54} 560 13.97 .095 (2.41) .136 13.43) .010 (0.25) .670 (17.02) .016 0.38) .020 0.51) .060 (162)

GP2Y0A02YK

Abstract: sharp GP2D12 GP2D12 Sharp GP2D12 distance measuring sensor GP2D12 SHARP GP2D12-4 GP2D12-2 SMA050 of GP2D12 REFLECTIVE SENSOR sharp
Contextual Info: GP2D12 Optoelectronic Device FEATURES • Analog output • Effective Range: 10 to 80 cm • LED pulse cycle duration: 32 ms 1 2 3 • Typical response time: 39 ms • Typical start up delay: 44 ms • Average current consumption: 33 mA PIN SIGNAL NAME • Detection area diameter @ 80 cm: 6 cm

358 ez 802

Abstract: SDI Microwave Elcom Technologies HMC700LP4E Wideband Synthesizer hmc700lp4 register electronica HMC508LP5E HMC509LP5E HMC510LP5E
Contextual Info: New Article Feature by Hittite Microwave Corporation High Performance SiGe PLLs Pair with Low Phase Noise GaAs VCOs for Microwave Radio Hittite Microwave Corporation March 2009 ? FEATURED ARTICLE INTEGRATION, PERFORMANCE & FUNCTIONALITY Integration, performance and functionality, are three of the most common

sharp gp2d120

Abstract: GP2D120 GP2D120 applications iso 4 Sharp 45 AD7298 Sensors PSD corrugated SHEET Shenzhen State Microelectronics gp2d12
Contextual Info: GP2D120 Optoelectronic Device FEATURES • Analog output • Effective range: 4 to 30 cm • Typical response time: 39 ms 1 2 3 • Typical start up delay: 44 ms • Average Current Consumption: 33 mA DESCRIPTION PIN SIGNAL NAME The GP2D120 is a distance measuring sensor with

4433-INTERPOINT-BLVD

Abstract: Pioneer sk 400 SK9210 semi catalog 4801N
Contextual Info: ANALOG DEVICES CD REFERENCE HEADQUARTERS HEADQUARTERS EUROPEAN-HEADQUARTERS ANALOG DEVICES GMBH Phone: 49-89-76903-551 Fax: 49-89-76903-557 Am-Westpark-1-3 D-81373-Munenchen,Germany JAPAN-HEADQUARTERS ANALOG DEVICES K.K. Phone: 81-3-5402-8210 Fax: 81-3-5402-1063

lm 8446

Abstract: FIN-02231 IR-58001 mt 6680 76S722333
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.SA Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL: 408-544-4000 FAX : 408-544-4934 1111 Ptaza Drive, Suite 100 Schaumburg, IL 60173 TEL : 847-969-9515 FAX : 847-969-9509 238 Littleton Road. Suite 201