822 DIODE Search Results

ceramic capacitor, .1uF 50v

Abstract: SBS c11 battery smart phone jumper setting
Contextual Info: 19-1546; Rev 0; 9/99 MAX1667 Evaluation Kit Component Suppliers SUPPLIER PHONE FAX AVX 803-946-0690 803-626-3123 Central Semiconductor 516-435-1110 516-435-1824 Coilcraft 847-639-6400 847-639-1469 Dale 402-564-3131 402-563-6418 Fairchild 408-822-2000 408-822-2102

JRF820

Abstract: F820R
Contextual Info: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN

24Vdc rectifier diode

Contextual Info: RS ITEM NO 209-822 SIGNO ITEM NO MGGM24 LED/Multiled Multiled Optimum voltage V 24Vdc Intensity Mounting Size T1 3/4 Rectifier - Reverse Voltage Mounting Finish Midget Groove AC current - Protection Protection Diode DC current 15mA Mount Holder Midget Groove

sot234 jt

Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01

11p06

Abstract: DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 6k201 84c122a philips RC5 protocol
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors

sot234 jt

Abstract: PCA84C MCD251
Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 PHILIPS Philips Semiconductors Product specification

Data Handbook IC14

Abstract: 822 ic MAKING RC-5 ir remote control DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 MCD251
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors

49 mhz remote control transmitter circuit

Abstract: Data Handbook IC14 PCA84C122 822 ic MAKING IR REMOTE CONTROL IC RC-5 ic remote control REMOTE CONTROL IC TI 783 DIP20 PCA84C222
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors

ON 823

Abstract: 822 diode MOSFET 400V TO-220 LND820 rd1004 823 diode
Contextual Info: DATA SHEET LND820/821/822/823 POWER MOSFET GENERAL DESCRIPTION The LND820 series provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred

PCA84C122

Abstract: DIP20 PCA84C222 S020 S028 SDIP24 PCA84C
Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 Philips Semiconductor« PHILIPS ht f l Q # 3 s

IRF820

Abstract: IRF822 irf821 IRF820.821 k 55 d 3j3 IRF820 SAMSUNG ON 823 IRF820..821 IRF420 IRF422
Contextual Info: ^SO IRF820/821/822/823 FEATURES GD17311 Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 7 cìb414E • •

sod-80 with blue band

Abstract: blue cathode melf F-822 F822 Current Regulator Diodes F-701 F-101 f103 semiconductor F-202 F-102
Contextual Info: F-101 I nternational thru S em ico nducto r , I n c . F-822 SURFACE MOUNT CURRENT REGULATOR DIODES MAXIMUM RATINGS DESIGN DATA G S Power Dissipation 400 mW Therm al Resistance 150 °C /W Max Rated Voltage 100 Volts G1 C ASE: Hermetically sealed glass with solder contact tabs at

Philips IC14

Abstract: 84cxxx S024L DIL20 PCA84C122 PCA84C122A sot146e philips remote control ic 14 pin philips application note 422 Data Handbook IC14
Contextual Info: NAPC/PHILIPS SEMICOND b^E T> • bbSB'ìSM 00^321*5 Ô3b « S I C 3 Preliminary specification Philips Semiconductors 8-bit microcontrollers for remote control transmitters PCA84C122; 222; 422; 622; 822 CONTENTS 1 FEATURES 1 FEATURES • 84CXXX CPU 2 GENERAL DESCRIPTION

C20 diode, TO

Abstract: 822 diode c20 diode 3108 DIODE ZC821 ZC823 Silicon Tuner ZC825 ZC826 ZC820
Contextual Info: SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES ZC820 SERIES ZC820 SERIES ISSUE 2 – MARCH 94 DIODE PIN CONNECTION 1 200 1 CATHODE 2 2 ANODE E-Line TO92 Compatible Diode Capacitance pF 100 ABSOLUTE MAXIMUM RATINGS. 826 825 10 824 823 822 821 820 10 Reverse Voltage (Volts)

C-108

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-004 8224-7VGT/C108/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package

1N6620

Abstract: 1N6621
Contextual Info: MicrojsemiCorp. 1IU 6620U S th ru 1N 662SU S f Santa Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-822 0 • (714) 557-5989 Fax Features • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME

RC-5 ir remote control

Abstract: DIL20 PCA84C122 MCD25 84C122 SDIL24 MCD251
Contextual Info: P hilip s S em iconductors P relim inary spe cifica tion 8-bit microcontrollers for remote control transmitters • PCA84C122; 222; 422; 622; 822 CONTENTS 1 FEATURES 1 FEATURES • 84CXXX CPU 2 GENERAL DESCRIPTION • ROM, RAM and I/O are device dependent,

F-301

Abstract: F-501 blue cathode melf f123 F-272 f202 F-202 F-452 F-701 f101
Contextual Info: F-101 I n ter n a tio n a l thru S e m ic o n d u c to r , I n c . F-822 SURFACE MOUNT CURRENT REGULATOR DIODES MAXIMUM RATINGS Power Dissipation 400 mW Therm al Resistance 150 °C /W Max Rated Voltage 100 Volts DESIGN DATA G CASE: Hermetically sealed glass

IRF820

Abstract: IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

samsung 822

Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: MEO 550-02 DA Fast Recovery Epitaxial Diode FRED Module 3 VRRM V V 200 200 1 3 Type 1 MEO 550-02DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 822 582 2880

d773

Abstract: diode sy 710 sy 710 diode
Contextual Info: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

8224-10VRT

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package 8224-10VRT/TR4-9 CDT4-822-001 ECN : Dimensions: θ ▓ Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package

transistor c109

Abstract: c109 005
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-005 8224-7VRT/C109/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package