822 DIODE Search Results

sot234 jt

Contextual Info: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01

sod-80 with blue band

Abstract: blue cathode melf F-822 F822 Current Regulator Diodes F-701 F-101 f103 semiconductor F-202 F-102
Contextual Info: F-101 I nternational thru S em ico nducto r , I n c . F-822 SURFACE MOUNT CURRENT REGULATOR DIODES MAXIMUM RATINGS DESIGN DATA G S Power Dissipation 400 mW Therm al Resistance 150 °C /W Max Rated Voltage 100 Volts G1 C ASE: Hermetically sealed glass with solder contact tabs at

C-108

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : PART NO. : █ Package ▓ CDT2-822-004 8224-7VGT/C108/TR2-24 ECN : Dimension: Notes: 1.All dimensions are in millimeters, tolerance is 0.25mm except being specified 2.Lead spacing is measured where the lead emerge from the package

1N6620

Abstract: 1N6621
Contextual Info: MicrojsemiCorp. 1IU 6620U S th ru 1N 662SU S f Santa Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-822 0 • (714) 557-5989 Fax Features • • • • • • • AXIAL AND SURFACE MOUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME

Contextual Info: SKiM 350GD128DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT / 0 ( (67 /0 : !"    + ,- !42" .(

Contextual Info: LMV821-N, LMV822-N, LMV822-N-Q1 LMV824-N, LMV824-N-Q1 www.ti.com SNOS032G – AUGUST 1999 – REVISED NOVEMBER 2013 LMV821-N/LMV822-N/LMV822-N-Q1/LMV824/LMV824-N-Q1 Single/Dual/Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps Check for Samples: LMV821-N, LMV822-N, LMV822-N-Q1, LMV824-N, LMV824-N-Q1

Contextual Info: LMV821-N, LMV822-N, LMV822-N-Q1 LMV824-N www.ti.com SNOS032F – AUGUST 1999 – REVISED JULY 2013 LMV821-N/LMV822-N/LMV822-N-Q1/LMV824 Single/Dual/Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps Check for Samples: LMV821-N, LMV822-N, LMV822-N-Q1, LMV824-N

GP 821

Abstract: Fagor GP diode FAG 50 MR820GP MR822 GP 826 MR824
Contextual Info: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

DIODE 158

Abstract: Diode Sensors 23443 6960B ifr 6920
Contextual Info: Counters & Power Meters 6910/20/30 RF Power Sensors A range of 17 power sensors available for use with 6200B series MTS, CPM, 6960B and 6970 power meters • Wide frequency coverage 30 kHz to 46 GHz • Power levels from: -70 dBm 100 pW to +44 dBm (25 W)

985-117

Abstract: PD 1515 2322 644 D1029N D2209N D660N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

D200L

Contextual Info: E -pack Lead type ITO-220 ' Absolute Maximum Ratings V rm lo Condfas To I fs m Tstg Tj [V ] [A] [•c] [A] [°C] [•c] [V ] 132 45 125 50 132 45 200 200 200 400 200 400 200 5 8I 5 6I 5 200 400 200 200 200 400 200 200 400 200 400 200 137 45 50 60 150 122

LDM3S86

Contextual Info: LDM3S86 1310nm Uncooled Laser Nanovation’s LDM3S86 1310nm uncooled laser product features high reliability over a wide operating wavelength range. This laser diode module is targeted toward telecom access, junction and trunk applications. Features • High reliability RWG chip

LMV821

Abstract: LMV822 LMV824 SC70-5 A14* marking sot23-5
Contextual Info: LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps General Description The LMV821/LMV822/LMV824 bring performance and economy to low voltage / low power systems. With a 5 MHz unity-gain frequency and a guaranteed 1.4 V/µs slew rate,

TB03100M

Abstract: TRIPLE ZENER DIODE ARRAY Dual N-Channel mosfet sot-363 Dual P-Channel mosfet sot-363 thyristor tt 330 n16 DMMT847B sot26 sot363 transistor ALL4150 sot-363 MARKING n10 diode marking code LY sot-353
Contextual Info: Product Catalog 2002/2003 Click to go to: - Table of Contents - New Products List - Index Click: part numbers > data sheets Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2002/2003 Specifications are subject to change without notice.

DS100128-33

Abstract: LMV821 LMV822 LMV824 SC70-5 PCMCIA modem A14 SOT23-5 A14 marking sot23-5
Contextual Info: LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps General Description The LMV821/LMV822/LMV824 bring performance and economy to low voltage / low power systems. With a 5 MHz unity-gain frequency and a guaranteed 1.4 V/µs slew rate,

LMV822

Abstract: PCMCIA modem 1001289 A14* marking sot23-5 A14 marking sot23-5 LMV821 AN-397 LMV824 SC70-5 mixer 5pin package
Contextual Info: LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps General Description The LMV821/LMV822/LMV824 bring performance and economy to low voltage / low power systems. With a 5 MHz unity-gain frequency and a guaranteed 1.4 V/µs slew rate,

D1029N

Abstract: D2209N D660N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

Contextual Info: TV Breakaway Fail Safe – accessories backshells, dummy contacts, wire combs Amphenol offers a full range of accessories that are designed to enhance the performance of Amphenol Breakaway connectors. Low Profile Backshells in shell size 25 with the following features:

DD-57

Contextual Info: URF24P82E5 URW24P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 5 Ω KF 30: C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ473 • Rgtkqfke"cxcncpejg"tcvgf RG/VQ474 •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu

15 kV thyristor

Abstract: DIODE JS.4 bo 135 IEC 68-2-30 IEC 68-2-2 ba marking BO diode cathode indicated by number iec 286 QDDS313 RKZ320301
Contextual Info: E R I C S S O N C O M P O N E N T S AB 4*4E T> 3373314 0 0 0 2 3 1 2 ISM B 1 E R I C Overvoltage protection of printed board assemblies Thyristor diode PNPN Type R K Z320301 Technical data 1. General The diode RKZ 320 301 consisting o f a thyristor w ithout

Contextual Info: Features • • • • • • • • • • • • • Current-controlled output current source with 5 input channels 2 selectable outputs for grounded laser diodes Output current per channel up to 200 mA Total output current up to 250 mA Rise time 1.0 ns / fall time 1.1 ns

LMV822

Abstract: W3 19 A14* marking sot23-5 lmv 397
Contextual Info: LMV821 Single/ LMV822 Dual/ LMV824 Quad Low Voltage, Low Power, R-to-R Output, 5 MHz Op Amps General Description The LMV821/LMV822/LMV824 bring performance and economy to low voltage / low power systems. With a 5 MHz unity-gain frequency and a guaranteed 1.4 V/µs slew rate,

DD 607 B

Abstract: F 407 Diode
Contextual Info: URS26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C •"Wnvtc"nqy"icvg"ejctig RG/VQ473-3-11 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{

Contextual Info: SKM 200GB123D Absolute Maximum Ratings Symbol Conditions IGBT *6 &* &*9 :6 .< .   . 3 14 84 5* 3 /  .=69+.& > .  Trench IGBT Modules SKM 200GB123D & &(9 . 3 14 82 5* 3 /  &( 3 /2 B  @B .< 3 /42 5* /122 122 /82 022