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YAGEO Corporation


YAGEO Corporation KHS17AKB-AX-82RAA Wirewound Resistors - Through Hole 17Wat 82 Ohms 82R 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	KHS17AKB-AX-82RAA		956			1 $2.62 10 $1.54 100 $1.09 1000 $0.86 10000 $0.79	Buy Now
	KHS17AKB-AX-82RAA		956			1 $2.62 10 $1.54 100 $1.09 1000 $0.86 10000 $0.79	Buy Now
YAGEO Corporation KHS11AJB-AX-82RAA Wirewound Resistors - Through Hole 11Watt 82 Ohms 82R 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	KHS11AJB-AX-82RAA					1 $2.04 10 $1.20 100 $0.85 1000 $0.62 10000 $0.57	Get Quote
	KHS11AJB-AX-82RAA					1 $2.04 10 $1.20 100 $0.85 1000 $0.62 10000 $0.57	Get Quote
YAGEO Corporation KHS11AKB-AX-82RAA Wirewound Resistors - Through Hole 11Wat 82 Ohms 82R 10%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	KHS11AKB-AX-82RAA					1 $1.95 10 $1.15 100 $0.81 1000 $0.59 10000 $0.55	Get Quote
	KHS11AKB-AX-82RAA					1 $1.95 10 $1.15 100 $0.81 1000 $0.59 10000 $0.55	Get Quote
YAGEO Corporation CRP110JT-52-82RAA Wirewound Resistors - Through Hole 1.1Wat 82 Ohms 82R 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	CRP110JT-52-82RAA					1 $0.70 10 $0.44 100 $0.24 1000 $0.16 10000 $0.14	Get Quote
	CRP110JT-52-82RAA					1 $0.70 10 $0.44 100 $0.24 1000 $0.16 10000 $0.14	Get Quote
YAGEO Corporation CRS110JT-52-82RAA Wirewound Resistors - Through Hole 1.1Wat 82 Ohms 82R 5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	CRS110JT-52-82RAA					1 $0.79 10 $0.50 100 $0.27 1000 $0.18 10000 $0.16	Get Quote
	CRS110JT-52-82RAA					1 $0.79 10 $0.50 100 $0.27 1000 $0.18 10000 $0.16	Get Quote

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82-RAA 1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX 202GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. '5( 6 7. ) '.( 6 8. 6 9 '. - &(. ) 4 > '( ) '@. 6 7. ) '&. 6 8. 6 &. 6 4. 6 1 8. * A &5(	Original	202GB066HDs	PDF
Contextual Info: SKM 200GB123D Absolute Maximum Ratings Symbol Conditions IGBT 6 & &9 :6 .< . . 3 14 84 5 3 / .=69+.& > . Trench IGBT Modules SKM 200GB123D & &(9 . 3 14 82 5* 3 / &( 3 /2 B @B .< 3 /42 5* /122 122 /82 022	Original	200GB123D 200GB123D 200GAL123D 200GAR123D 200GB123D1 GA66G	PDF
Contextual Info: SEMiX 403GB128D Absolute Maximum Ratings Symbol Conditions IGBT / ', - 2 / 1, - 267 ',-. ! % 1'( 3'( $ 4( - 5( $ 3,( $ :'( 1( ? ', - 53( $ 4( - '5, $ 3,( $ '( $ ;( $ 3( AAA B 1,(	Original	403GB128D	PDF
Contextual Info: SEMiX 101GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. &6. 7 8. ) &.( 7 '. 7 9 '. - &(. ) 4 > '( ) &(. 7 8. ) &&. 7 '. 7 (. 7 4. 7 1 6. * @ &5(	Original	101GD066HDs	PDF
Contextual Info: SEMiX 302GB066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. 67. 8 7. ) '7( 8 4. 8 9 '. - &(. ) 4 = '( ) ?'. 8 7. ) 6&. 8 4. 8 &?. 8 4. 8 1 ?. * @ &5(	Original	302GB066HDs	PDF
Contextual Info: SEMiX 452GB176HD Absolute Maximum Ratings Symbol Conditions IGBT . + , 1 . '+ , 156 )+,- # '0( 23+ " 4( , 3'( " 8( " : )( . ')+ , '( > )+ , 34+ " 4( , )8( " 8( " )( " 8( " A 2( @@@ B '+(	Original	452GB176HD	PDF
Contextual Info: SEMiX 151GD066HDs Absolute Maximum Ratings Symbol Conditions IGBT - ' $ - &5( ) $#! '()2 % 4. '. 6 7. ) &(. 6 8. 6 9 '. - &(. ) 4 = '( ) ''. 6 7. ) &4. 6 8. 6 ?7. 6 4. 6 1 @. * A &5( &'(	Original	151GD066HDs	PDF
1E22 Contextual Info: SKM 400GA173D . 6 13 7* # Absolute Maximum Ratings Symbol Conditions IGBT Values .9 6 13 7* 8 & /422 .9 6 /32 7* &= . 6 13 7 ;2 + . 6 <2 7* 022 + $22 + &=61%& ? 12 >8 SEMITRANS 4 IGBT Modules * 6 /122 @	Original	400GA173D 400GA173D 400GA173D1S 1E22	PDF
Contextual Info: SKM 400GA173D . 6 13 7* # Absolute Maximum Ratings Symbol Conditions IGBT Values .9 6 13 7* 8 & /422 .9 6 /32 7* &= . 6 13 7 ;2 + . 6 <2 7* 022 + $22 + &=61%& ? 12 >8 SEMITRANS 4 IGBT Modules * 6 /122 @	Original	400GA173D 400GA173D1S	PDF
SKM200GAL123D Contextual Info: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT 8 .9 5 16 7 &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*	Original	200GB123D 200GAL123D 200GAR123D SKM200GAL123D	PDF
Contextual Info: SKM 200GB123D . 5 16 7* # Absolute Maximum Ratings Symbol Conditions IGBT 8 .9 5 16 7 &* .9 5 /62 7* /122 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*	Original	200GB123D 200GAL123D 200GAR123D	PDF
PENTODE pe1-100 Abstract: philips 7560 PE1/100 88C0 amv j hf Contextual Info: PHILIPS PE 1/100 PENTODE for use as H.F. and L.F. amplifier PENTHODE pour utilisation en amulificatrice H.F. et B.F. PENTODE zur Verwendung als H.F. und N.F. Verstärker : oxide-coated : oxyde : Oxyd Cathode Cathode Kathode Heating : indirect Chauffage : indirect	OCR Scan	PE1/100 PENTODE pe1-100 philips 7560 PE1/100 88C0 amv j hf	PDF
300GB Contextual Info: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT % % < 5" SEMITRANSTM 3 Trench IGBT Modules SKM 300GB066D Target Data Features !"	Original	300GB066D 300GB	PDF
Contextual Info: SKM 400GB066D Absolute Maximum Ratings Symbol Conditions IGBT % % < 5" SEMITRANSTM 3 Trench IGBT Modules SKM 400GB066D Target Data Features !"	Original	400GB066D	PDF

uPD4564163G5-A80-9JF Abstract: A80-9JF NEC MEMORY UPD4564441G5-A10-9JF Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively.	Original	PD4564441 PD4564441, 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin uPD4564163G5-A80-9JF A80-9JF NEC MEMORY UPD4564441G5-A10-9JF	PDF
E014 Abstract: upd4564163g5a10b Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.	Original	PD4564441, 64M-bit 864-bit 54-pin M01E0107 E014 upd4564163g5a10b	PDF
350GD Contextual Info: SKiM 350GD128DM Absolute Maximum Ratings Symbol Conditions IGBT / 0 ( (6 /0 : !" SKIM 4 SKiM 350GD128DM SKiM 350GD128DM Preliminary Data Features ! "	Original	350GD128DM 350GD128DM 350GD	PDF
DL94 Abstract: uma* philips 1AV Series KS 0302 8218 pins 10 28L-2 NA1211 M9520 2S1251 Contextual Info: P H IL IP S DL 94 OUTPUT PENTODE for battery receivers PENTHODE DE SORTIE pour des appareils batterie ENDPENTODE für Batteriegeräte Heating: direct by battery current, rectified A.C. or D.C.; series or parallel supply Chauffage: direct par courant batterie,C.A. redressé	OCR Scan		PDF
NEC MEMORY Abstract: p77 cac uPD4564441 Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441, 4564841, 4564163 64M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 × 4, 2,097,152 × 8 × 4, 1,048,576 ×16 × 4 word × bit × bank , respectively.	Original	PD4564441, 64M-bit 864-bit 54-pin NEC MEMORY p77 cac uPD4564441	PDF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 word × bit × bank , respectively.	Original	PD45128441, 128M-bit 728-bit 54-pin M01E0107	PDF
uPD481850GF-A12-JBT Abstract: dba1 PD48 Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 for Rev.L 8 M-BIT SYNCHRONOUS GRAM 128K-WORD BY 32-BIT BY 2-BANK Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port.	Original	PD481850 128K-WORD 32-BIT PD481850 100-pin uPD481850GF-A12-JBT dba1 PD48	PDF
MS82V16520 Abstract: QFP100-P-1420-0 Contextual Info: FEDS82V16520-04 ¡ Semiconductor MS82V16520 This version: Feb. 2000 Previous version: Jul. 1999 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32	Original	FEDS82V16520-04 MS82V16520 144-Word 32-Bit MS82V16520 QFP100-P-1420-0	PDF
db3 bl Abstract: dba1 MAKING A10 BGA QFP100-P-1420-0 MS82V16520 Contextual Info: E2L1056-39-72 ¡ Semiconductor MS82V16520 ¡ Semiconductor This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32	Original	E2L1056-39-72 MS82V16520 144-Word 32-Bit MS82V16520 db3 bl dba1 MAKING A10 BGA QFP100-P-1420-0	PDF
Contextual Info: Pr E2L0056-28-91 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column	Original	E2L0056-28-91 MS82V16520 144-Word 32-Bit MS82V16520 QFP100-P-1420-0 65-BK4	PDF

82-RAA 1 Search Results

82-RAA 1 Price and Stock

YAGEO Corporation KHS17AKB-AX-82RAA

YAGEO Corporation KHS11AJB-AX-82RAA

YAGEO Corporation KHS11AKB-AX-82RAA

YAGEO Corporation CRP110JT-52-82RAA

YAGEO Corporation CRS110JT-52-82RAA

82-RAA 1 Datasheets Context Search

1E22

SKM200GAL123D

PENTODE pe1-100

300GB

uPD4564163G5-A80-9JF

E014

350GD

DL94

NEC MEMORY

uPD481850GF-A12-JBT

MS82V16520

db3 bl