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Catalog Datasheet	MFG & Type	PDF	Document Tags
NEC JAPAN Abstract: UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC Text: of the µPD4564163G5, µPD4564841G5, and µPD4564441G5 device types organized as 1,048, 576x16x4 , 2,097	Original	PDF	TRQ-00-07-339 PD4564441G5 PD4564841G5 PD4564163G5 Am241, NEC JAPAN UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC
1996 - uPD4564163G5-A80-9JF Abstract: A80-9JF NEC MEMORY UPD4564441G5-A10-9JF Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are	Original	PDF	PD4564441 PD4564441, 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin uPD4564163G5-A80-9JF A80-9JF NEC MEMORY UPD4564441G5-A10-9JF
1998 - apd456 Abstract: No abstract text available Text: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMS achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMS are	Original	PDF	pPD4564441 pPD4564441, 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin apd456
1997 - UPD4564163G5-A10B Abstract: uPD4564841G5-A10-9JF UPD4564163G5A10L9JF Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous	Original	PDF	PD4564441 PD4564441, 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin UPD4564163G5-A10B uPD4564841G5-A10-9JF UPD4564163G5A10L9JF
Not Available Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The	OCR Scan	PDF	uPD4564441 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin S54G5-80-9JF PD4564441 PD4564xxx. pPD4564xxxG5
LX 2262 Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT / ( P D 4564441, 4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The uPD4564441, uPD4564841, uPD4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous	OCR Scan	PDF	uPD4564441 uPD4564841 uPD4564163 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin LX 2262