NEC JAPAN
Abstract: UPD4584 uPD4564163G5 NEC 1010 uPD4564841G5 electric scheme ca 400 w NEC JAPAN IC
Text: of the µPD4564163G5, µPD4564841G5, and µPD4564441G5 device types organized as 1,048, 576x16x4 , 2,097
|
Original
|
PDF
|
TRQ-00-07-339
PD4564441G5
PD4564841G5
PD4564163G5
Am241,
NEC JAPAN
UPD4584
uPD4564163G5
NEC 1010
uPD4564841G5
electric scheme ca 400 w
NEC JAPAN IC
|
1996 - uPD4564163G5-A80-9JF
Abstract: A80-9JF NEC MEMORY UPD4564441G5-A10-9JF
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are
|
Original
|
PDF
|
PD4564441
PD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
uPD4564163G5-A80-9JF
A80-9JF
NEC MEMORY
UPD4564441G5-A10-9JF
|
1998 - apd456
Abstract: No abstract text available
Text: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMS achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAMS are
|
Original
|
PDF
|
pPD4564441
pPD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
apd456
|
1997 - UPD4564163G5-A10B
Abstract: uPD4564841G5-A10-9JF UPD4564163G5A10L9JF
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous
|
Original
|
PDF
|
PD4564441
PD4564441,
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
UPD4564163G5-A10B
uPD4564841G5-A10-9JF
UPD4564163G5A10L9JF
|
Not Available
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ju P D 4 5 6 4 4 4 1 ,4 5 6 4 8 4 1 , 4 5 6 4 1 6 3 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynam ic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The
|
OCR Scan
|
PDF
|
uPD4564441
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
S54G5-80-9JF
PD4564441
PD4564xxx.
pPD4564xxxG5
|
LX 2262
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / ( P D 4564441, 4564841,4564163 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The uPD4564441, uPD4564841, uPD4564163 are high-speed 67,108,864-bit synchronous dynamic random -access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048, 576x16x4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous
|
OCR Scan
|
PDF
|
uPD4564441
uPD4564841
uPD4564163
864-bit
304x4x4,
152x8x4,
576x16x4
54-pin
LX 2262
|