817 C W Search Results

BC817

Abstract: BC817-16 BC817-25 BC817-40 BC-817-40 transistor
Contextual Info: B< 817-16/BC 817-25 BC 817-40 G e n e r a l P u r p o s e T ran sisto r N P N Silicon M a x im u m R a tin g s Ta = 25°C unless Otherwise noted Symbol U nii C o lle c to rE m itte r Voltage VCE0 Value 45 C ollector-B ase Voltage VCBO 50 E m itter-Base Voltage

P-MRJ-578X-X1

Abstract: 2076D B 817 c TIA EIA 568-B.1 RJ45 dwg ec 817
Contextual Info: 7 8 6 1 2 3 4 5 REV - DESCRIPT - DATE - APPRVD . . . F F .630 16.00 1.914 48.62 1.142 29.00 E 4-40 UNC THREAD 2 PLCS E .350 8.90 .817 20.76 .668 16.98 .354 9.00 .817 20.76 D D .551 14.00 .945 24.00 1.564 39.72 NOTES: C C 1. COMPONENTS: - CONNECTOR: MRJ-538X-0X, RECEPTACLE, 8 CONTACTS.

817 y

Contextual Info: ALECTROn CORPORATION 935 N. MAIN FT. WORTH, TX 76106 817 625-8999 9040 “Y” ADAPTER RCA PLUG TO 2 RCA JACKS. SIZE 4”. Wire specifications Gauge 26 A W G , (0.12m m /10) Jacket - PVC Gray Spiral Shield - 3 0 /0 .1 0 Bare Copper Dialectric strength - A C /D C 300V/1 Min

B817

Abstract: B 817 K*1047
Contextual Info: KSD1047 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High P ow er D issipation • C om plem ent to K S B 817 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector Base Voltage C h a ra c te ris tic

marking code 6Cp

Abstract: code marking 6Cp sot-23 BC817B 817b
Contextual Info: J B C 817 B C 818 K. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package fo r use in driver and ou tput stages o f audio amplifiers in thick and thin -film hybrid circuits. P-N-P complements are BC807; R and BC808; R respectively.

Contextual Info: • bb53^31 002444b EOT * A P X N AUER PHILIPS/DISCRETE b?E B C 817 B C 818 D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package for use in driver and output stages of audio amplifiers in thick and thin-film hybrid circuits.

C817

Abstract: 40LT16 B 817 c c 817
Contextual Info: MCC SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ B C 817 -1 6 /2 5 /4 0 LT1 TR A N SIS TO R N P N 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES Power diss ipatf on PcM: 0.3 W (Tamb=25"C ) C ollector current |CM: 0.5 A Coltector-base voltage V (B R )C B o:50V

cosmo 1010 817

Abstract: 1010 817 COSMO 1010 Cosmo 1010-817 cosmo 1010 -817 1010- 817 IC cosmo 1010 817 cosmo 817 K1010 cosmo 1010 817 1010-817
Contextual Info: cosmo K1010 High Reliability Photo Coupler UL 1577 File No.E169586 Features VDE 0884 / 0860 / 0805 (File No.101347) Outside Dimension : Unit ( m m ) sn 1. Current transfer ratio r? cosmo 1010 (C T R :M IN .5 0 % at lF=5m A V c e = 5 V ) 817 2. High isolation voltage betw een input and output

LTV817C

Contextual Info: • FEATURES 1. C urrent transfer ratio C TR : M IN . 5 0 % at lF = 5m A , V CE = 5V 2. High input-output isolation voltage V ,so: 5 ,0 0 0 Vrm s 3. C om pact dual-in-line package L T V 817: 1-channel type, LTV 827: 2-channel type LT V 847: 4-channel type

tic 41

Abstract: 3.5mm phone jack JY-3501-020-030 Phone Jack 3.5mm
Contextual Info: □A . JACK ; Jrojì.OO 10X2.0 2-o.C*Z. 5 11 ! i, !I M- * «Ò I L. :.J-l — ‘- 1- - -f-* i ! Hrl- U.5 j £ à .f M ALECTRON CORPORATION 935 N. MAIN FT. WORTH, TX 76106 817 626-8999 AJE PLU & ALECTRON P A R T NO. 231- 352 3.5MM PHONE JA C K (JY-3501-020-030)

OPTO 817 C

Abstract: 0817B opto 817 817 OPTO
Contextual Info: TOSHIBA {DISCRET E/OP TO 3- Sb 9097250 T O S H IB A i Ê| ^017250 0DQñl74 4 ‘j o C 0 817 '+ D IS C R E T E /O PT O ) T - 74- 09-01 TOSHIBA RF POWER AMPLIFIER MODULE 800MHE UHF POWER AMPLIFIER MODULE <FM) Unit in m m 6 6.0 FEATURES: -&ÜQ- . Output Power

H11AA814A

Contextual Info: OPTOELECTRONICS 4 -P IN PHOTOTRANSISTOR OPTOCOUPLERS H 11A A 814 SERIES H 11A 817 SERIES P A C K A G E D IM E N S IO N S D E S C R IP T IO N The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, con­ nected in inverse parallel, driving a single silicon pho­

0X00

Abstract: 16C550 LM3S817
Contextual Info: P RE LIMIN ARY LM3S817 Microcontroller D ATA SHE E T D S -LM3S 817- 2 9 7 2 C o p yri g h t 2 0 0 7 -2 0 0 8 L u mi n ary Mi cro, Inc. Legal Disclaimers and Trademark Information INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH LUMINARY MICRO PRODUCTS. NO LICENSE, EXPRESS OR

b475

Abstract: 0X00 16C550 LM3S817 SCR TRIGGER PULSE scr c231
Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S817 Microcontroller D ATA SH E E T D S -LM 3S 817- 9 1 0 2 C opyri ght 2007-2011 Texas Instruments Incor porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments

Contextual Info: TE X AS INS TRUM E NTS - P RO DUCTI O N D ATA Stellaris LM3S817 Microcontroller D ATA SH E E T D S -LM3S 817- 111 0 7 C o p yri g h t 2 0 07-2011 Te xa s In stru me n ts In co r porated Copyright Copyright © 2007-2011 Texas Instruments Incorporated All rights reserved. Stellaris® and StellarisWare® are registered trademarks of Texas Instruments

817L

Abstract: 4 pin 817 42mr 33RST STM690A STM692A STM703 STM704 STM802 STM805
Contextual Info: STM690A, STM692A, STM703 STM704, STM802, STM805, STM817/8/9 5V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V OPERATING VOLTAGE NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM818 only FOR

Hitachi DSA00276

Abstract: transistor pcr 406 p8254-2
Contextual Info: Hitachi Single-Chip Microcomputer H8/3052 F-ZTAT HD64F3052TF, HD64F3052F, HD64F3052VTF, HD64F3052VF Hardware Manual ADE-602-180 Rev. 1.0 1/11/2000 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s

Contextual Info: 806 - 849 MHz Wireless Amplifier QBS-110 Parameters • 806-849 MHz bandwidth Frequency range Small signal gain Gain vs. temperature Gain flatness Reverse isolation VSWR Input Output 1 dB compression Output intercept point 3rd Order 2nd Order Noise figure

Contextual Info: High Speed, Low Power Wide Supply Range Amplifier AD817 a CONNECTION D IAGRAM FEATURES Low Cost High Speed 50 M Hz Unity Gain Bandw idth 350 V/ ␮s Slew Rate 45 ns Settling Time to 0.1% 10 V Step Flexible Pow er Supply Specified for Single (+5 V) and Dual (؎5 V to ؎15 V) Pow er Supplies

Contextual Info: Hardware Documentation Data Sheet HAL 817 Programmable Linear Hall-Effect Sensor Edition Sept. 22, 2011 DSH000156_002EN HAL 817 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software

Contextual Info: Filters 50Q Coaxial Low Pass d c to 1000 MHz BLP STOP BAND, MHz FASSSANB.Mte v$m > Passband Stooband .L ts fw jV CAPD DATA CASE STYLE C N N £ C W o l» 2 1 O N Qty. U -9 ) T M jg p . traak} loss<1dB ) (loss 3dB) BLP-l.9* BLP-2.5* BLP-5 • BLP-7-75 DC-1.9

K1255

Abstract: k125
Contextual Info: K Series Knobs, Machined Aluminum K SERIES 3 Flute Design with and without Indicator Line Tyco A B C D E Electronics Alcoswitch Color K700B1/4 NO. 6-32 SET SCREW 2 PLACES F .281 7.14 .157 (3.99) .500 (12.70) 120° CD B .315 (8.00) .400 (10.16) G CRANK SPINNER

MC68020

Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. INDEX MOTOROLA For More Information On This Product, Go to: www.freescale.com INDEX - 1 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. INDEX —A— A Law . . . . . . . . . . . . . . . . . . . . . . . . 8-17

817-U

Abstract: 6Bs transistor
Contextual Info: BC 817U NPN Silicon Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors 3 2 with good matching in one package 1 VPW09197