810B Search Results

Entrelec

Abstract: WAGO ALLEN BRADLEY CONTA CLIP abb entrelec 3491000 VE500 phoenix contact wieland sticky Bradley
Contextual Info: Marking Systems VP500 and CMPS 500 Fixtures Description Altech Altech MT 2n - MT 4n, MT 7.5, MT 20, MT 25 Altech MT 5 - MT 15 Altech Group marker G1, G2, G4 ABB / Entrelec ABB Entrelec universal - RC/RCT quarter size ABB Entrelec RC 510A, 610A, 810A ABB Entrelec RC 510B, 610B, 810B”

RAC13

Abstract: MCM62X308-15-5 RAC11 RAC12
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM62X308 Product Preview Synchronous Line Buffer: 8K X 8 Bit Fast Static Dual Ported Memory J PACKAGE 300 MIL SOJ CASE 810B With IEEE Standard 1149.1 Test Access Port and Boundary-Scan JTAG The MCM62X308 is a synchronous, dual ported memory organized as 8,192

810B1

Abstract: 20-FFH A1286-2 811b1 CRD-68P-M17 2 M flash memory 812b2
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-30336-2E MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809Bx-/810Bx-/811Bx-/812Bx-25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, 810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and

Contextual Info: 810BJ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 1.5u Unity Gain BW (Hz)3.0MÂ V(io) Max. (V)10m I(io) Max. (A).10u Com Mode Inp Range (VICR)20 Input Resistance Typ. (Ohms)100k Temp Coef. of VIO50u P(D) Max. (W)150m

MCM6306DJ15

Abstract: OTM1 MCM6306DJ-15R2
Contextual Info: MOTOROLA Order this document by MCM6306D/D SEMICONDUCTOR TECHNICAL DATA MCM6306D Product Preview 32K x 8 Bit 3.3 Volt Fast Static RAM J PACKAGE 300 MIL SOJ CASE 810B -03 The MCM6306D is fabricated using Motorola’s high-performance silicon-gate CMOS technology. Static design eliminates the need for external clocks or timing

Contextual Info: MOTOROLA Order this document by MCM6229B/D SEMICONDUCTOR TECHNICAL DATA MCM6229B 256K x 4 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6229B is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. Static design eliminates the need for external clocks

810B

Contextual Info: MEMORY • IS MB98A809B x -/810B x -/811B x -/812B x -25 FLASH ERASABLE AND PROGRAMMABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE ■ DESCRIPTION The Fujitsu MB98A809Bx, 810Bx, MB98A811Bx and MB98A%l2Bx are Flash electrically erasable and programmable Flash memory cards capable of storing and. retrievin^siarge amounts of data. The memory

812B3

Abstract: 811b1
Contextual Info: MEMORY FLASH MEMORY CARD PCMCIA Rel.2/JEIDA Ver.4 conformable MB98A809BX-/810Bx-/811 Bx-/812Bx-25 FLASH ERASABLE AND PRO GRAM M ABLE MEMORY CARD 512 K/1 M/2 M/4 M-BYTE • DESCRIPTION The Fujitsu MB98A809Bx, 810Bx, MB98A811Bx and MB98A812Bx are Flash electrically erasable and

TSE 151

Abstract: BB502C SC-82AB Hitachi DSA00310
Contextual Info: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810B Z 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz

sRAM 2116

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6229B 256K x 4 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6229B is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. Static design eliminates the need for external clocks

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6227B Product Preview J PACKAGE 300 MIL SOJ CASE 810B 1M x 1 Bit Static Random Access Memory The M C M 6227B is a 1,048,576 bit static random -access m em ory organized as 1,048,576 w ord s of 1 bit, fabricated using high-perform ance siiicon-gate C M O S te ch n ol­

810B-03

Abstract: MCM6229BB MCM6229BBXJ15
Contextual Info: MOTOROLA Order this document by m cm 622sbb/d SEMICONDUCTOR TECHNICAL DATA MCM6229BB Product Preview 256K x 4 Bit Static Random Access Memory XJ PACKAGE 400 MIL SOJ CASE 810-03 EJ PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6229BB is a 1,048,576 bit static random access memory organized

Hitachi DSA00164

Contextual Info: HM5164160 Series HM5165160 Series 64 M FP DRAM 4-Mword x 16-bit 8 k Refresh/4 k Refresh ADE-203-810B (Z) Rev. 1.0 Mar. 18, 1998 Description The Hitachi HM5164160 Series, HM5165160 Series are 64M-bit dynamic RAMs organized as 4,194,304word × 16-bit. They have realized high performance and low power by employing CMOS process

MCM6227B

Abstract: MCM6227BJ15 MCM6227BJ15R2 MCM6227BJ17 MCM6227BJ17R2 MCM6227BJ20 MCM6227BJ25 MCM6227BJ35
Contextual Info: MOTOROLA Order this document by MCM6227B/D SEMICONDUCTOR TECHNICAL DATA MCM6227B 1M x 1 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B–03 The MCM6227B is a 1,048,576 bit static random–access memory organized as 1,048,576 words of 1 bit. Static design eliminates the need for external clocks

Contextual Info: 810BH Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 1.5u Unity Gain BW (Hz)3.0MÂ V(io) Max. (V)10m I(io) Max. (A).10u Com Mode Inp Range (VICR)20 Input Resistance Typ. (Ohms)100k Temp Coef. of VIO50u P(D) Max. (W)150m

Contextual Info: MOTOROLA Order this document by MCM6227B/D SEMICONDUCTOR TECHNICAL DATA MCM6227B 1M x 1 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6227B is a 1,048,576 bit static random-access memory organized as 1,048,576 words of 1 bit. Static design eliminates the need for external clocks

Contextual Info: 810BT/CT FAST CMOS BUFFER/CLOCK DRIVER In teg ra ted D e v i œ T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • The 74F C T 810B T /C T is a dual bank inverting/ non­ inverting clock driver built using advanced dual metal CM O S technology. It consists of two banks of drivers, one inverting

AFBR-820

Abstract: AFBR-810 AFBR AFBR-810B mpo mtp connector
Contextual Info: AFBR-810BxxxZ and AFBR-820BxxxZ Twelve-Channel Transmitter and Receiver Pluggable, Parallel-Fiber-Optic Modules Data Sheet Description Features The AFBR-810B Twelve-Channel, Pluggable, Parallel-FiberOptic Transmitter and AFBR-820B Twelve-Channel, Pluggable, Parallel-Fiber-Optic Receiver are high performance fiber Optic modules for short-range parallel

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6229B Product Preview 256K x 4 Bit Static Random Access Memory J PACKAGE 300 MIL SOJ CASE 810B-03 The MCM6229B is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits, fabricated using high-performance silicon-gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6709R Product Preview 64K x 4 Bit Static RAM T h e M C M 6 7 0 9 R is a 2 6 2 ,1 4 4 b it s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d a s 6 5 ,5 3 6 300 MIL SOJ CASE 810B w o rd s o f 4 b its , fa b ric a te d u s in g h ig h -p e rfo rm a n c e s ilic o n -g a te B iC M O S te c h n o lo g y .

Contextual Info: AFBR-810BxxxZ and AFBR-820BxxxZ Twelve-Channel Transmitter and Receiver Pluggable, Parallel-Fiber-Optic Modules Data Sheet Description Features The AFBR-810B Twelve-Channel, Pluggable, Parallel-FiberOptic Transmitter and AFBR-820B Twelve-Channel, Pluggable, Parallel-Fiber-Optic Receiver are high performance fiber Optic modules for short-range parallel

Contextual Info: AFBR-810BxxxZ and AFBR-820BxxxZ Twelve-Channel Transmitter and Receiver Pluggable, Parallel-Fiber-Optic Modules Data Sheet Description Features The AFBR-810B Twelve-Channel, Pluggable, Parallel-FiberOptic Transmitter and AFBR-820B Twelve-Channel, Pluggable, Parallel-Fiber-Optic Receiver are high performance fiber Optic modules for short-range parallel

Lambda LCS

Abstract: lambda lm series Lambda LCS-A LXS-CC-12-R LAMBDA LXD-C-152 LXS-D-15-R LXS-EE-28-R LM series voltage regulators LAMBDA Voltage Regulator lambda lxs
Contextual Info: 5 YEAR GUARANTEED LINEAR Lambda LX series Features—LX series 7 package sizes Meets military environmental specifications MIL-STD-810B, MIL-E-5272C, MIL-I-6181D 5-year guaranteed MIL-W-16878 Wire UL approved Lambda minimum component count, power hybrid voltage

NSL-810

Abstract: 811B silicon photocell NSL-710 NSL-811
Contextual Info: • 8255271 SILONEX 73 INC » T |ñ a S S S 7 1 0DD0E4ñ S w 7^ r r - i r PHOTOCELL BULLETIN « 1 NSL-710BG/810BG/811BG BLUE SENSITIVE PHOTODIODES G ENERAL DESCRIPTION No. 15030 The N S L-710B G /810B G /811B G are TO-18 packaged, blue sen­ sitive silicon photodiodes. W ith near-human eye response