6709R Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6709R Product Preview 64K x 4 Bit Static RAM The M C M 6709R is a 262,144 bit static random access m em ory organized as 65,536 w ords of 4 bits, fab rica ted using h igh-perform ance silicon-gate BiC M O S technology.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 4 Bit Static RAM 6709R T h e M C M 6709R is a 262 ,14 4 bit static random a ccess m em ory organized as 65,5 36 w ord s o f 4 bits, fab rica ted using hig h -p e rfo rm a n ce s iiic o n -g a te BiCM O S technology. Static design elim ina te s the need for external clocks or tim ing

Contextual Info: High Current Toroid Inductors with header Special Features • Low radiation • High current capacity • High inductance • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C Part Number L (µH)

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

6708-RC

Abstract: 6710-RC 6711-RC 6701-RC 6723-RC 6722-RC
Contextual Info: NT IA PL † Ro HS CO M High Current Toroid Inductors with header Special Features • Low radiation • High current capacity • High inductance • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

6725R

Abstract: 6722-RC
Contextual Info: High Current Toroid Inductors with header Special Features • Low radiation • High current capacity • High inductance • Mounted on VW-1 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C Part Number L ( H)

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

6701-RC

Abstract: 6708-RC 6710-RC 6723-RC
Contextual Info: NT IA PL † Ro HS CO M High Current Toroid Inductors with header Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6709R Product Preview 64K x 4 Bit Static RAM T h e M C M 6 7 0 9 R is a 2 6 2 ,1 4 4 b it s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d a s 6 5 ,5 3 6 300 MIL SOJ CASE 810B w o rd s o f 4 b its , fa b ric a te d u s in g h ig h -p e rfo rm a n c e s ilic o n -g a te B iC M O S te c h n o lo g y .

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA 6709R 64K x 4 Bit Static RAM The 6709R is a 262,144 bit static random access memory organized as 65,536 words of 4 bits, fabricated using high-performance silicon-gate BiCMOS technology. Static design eliminates the need for external clocks or timing

EIA 549 Class 130B transformer

Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
Contextual Info: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.

810B-03

Abstract: MCM6709R MCM6709RJ6 MCM6709RJ6R2 MCM6709RJ7 MCM6709RJ7R2 MCM6709RJ8
Contextual Info: MOTOROLA Order this document by 6709R/D SEMICONDUCTOR TECHNICAL DATA 6709R 64K x 4 Bit Static RAM The 6709R is a 262,144 bit static random access memory organized as 65,536 words of 4 bits, fabricated using high–performance silicon–gate BiCMOS